MASK ROM, 1MX8, 150ns, CMOS, PDIP32, DIP-32
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | SK Hynix(海力士) |
| 包装说明 | DIP, DIP32,.6 |
| Reach Compliance Code | compliant |
| 最长访问时间 | 150 ns |
| JESD-30 代码 | R-PDIP-T32 |
| JESD-609代码 | e0 |
| 长度 | 42.0375 mm |
| 内存密度 | 8388608 bit |
| 内存集成电路类型 | MASK ROM |
| 内存宽度 | 8 |
| 功能数量 | 1 |
| 端子数量 | 32 |
| 字数 | 1048576 words |
| 字数代码 | 1000000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 1MX8 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | DIP |
| 封装等效代码 | DIP32,.6 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 并行/串行 | PARALLEL |
| 电源 | 3.3 V |
| 认证状态 | Not Qualified |
| 座面最大高度 | 4.826 mm |
| 最大待机电流 | 0.00005 A |
| 最大压摆率 | 0.03 mA |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 宽度 | 15.24 mm |
| Base Number Matches | 1 |
| GM23V8000A-15 | GM23V8000AFW-15 | GM23V8000A-30 | GM23V8000AFW-20 | GM23V8000A-25 | GM23V8000AFW-30 | GM23V8000AFW-25 | GM23V8000A-20 | |
|---|---|---|---|---|---|---|---|---|
| 描述 | MASK ROM, 1MX8, 150ns, CMOS, PDIP32, DIP-32 | MASK ROM, 1MX8, 150ns, CMOS, PDSO32, SOP-32 | MASK ROM, 1MX8, 300ns, CMOS, PDIP32, DIP-32 | MASK ROM, 1MX8, 200ns, CMOS, PDSO32, SOP-32 | MASK ROM, 1MX8, 250ns, CMOS, PDIP32, DIP-32 | MASK ROM, 1MX8, 300ns, CMOS, PDSO32, SOP-32 | MASK ROM, 1MX8, 250ns, CMOS, PDSO32, SOP-32 | MASK ROM, 1MX8, 200ns, CMOS, PDIP32, DIP-32 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) |
| 包装说明 | DIP, DIP32,.6 | SOP, SOP32,.56 | DIP, DIP32,.6 | SOP, SOP32,.56 | DIP, DIP32,.6 | SOP, SOP32,.56 | SOP, SOP32,.56 | DIP, DIP32,.6 |
| Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant | compliant | compliant |
| 最长访问时间 | 150 ns | 150 ns | 300 ns | 200 ns | 250 ns | 300 ns | 250 ns | 200 ns |
| JESD-30 代码 | R-PDIP-T32 | R-PDSO-G32 | R-PDIP-T32 | R-PDSO-G32 | R-PDIP-T32 | R-PDSO-G32 | R-PDSO-G32 | R-PDIP-T32 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 长度 | 42.0375 mm | 20.498 mm | 42.0375 mm | 20.498 mm | 42.0375 mm | 20.498 mm | 20.498 mm | 42.0375 mm |
| 内存密度 | 8388608 bit | 8388608 bit | 8388608 bit | 8388608 bit | 8388608 bit | 8388608 bit | 8388608 bit | 8388608 bit |
| 内存集成电路类型 | MASK ROM | MASK ROM | MASK ROM | MASK ROM | MASK ROM | MASK ROM | MASK ROM | MASK ROM |
| 内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 32 | 32 | 32 | 32 | 32 | 32 | 32 | 32 |
| 字数 | 1048576 words | 1048576 words | 1048576 words | 1048576 words | 1048576 words | 1048576 words | 1048576 words | 1048576 words |
| 字数代码 | 1000000 | 1000000 | 1000000 | 1000000 | 1000000 | 1000000 | 1000000 | 1000000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
| 组织 | 1MX8 | 1MX8 | 1MX8 | 1MX8 | 1MX8 | 1MX8 | 1MX8 | 1MX8 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | DIP | SOP | DIP | SOP | DIP | SOP | SOP | DIP |
| 封装等效代码 | DIP32,.6 | SOP32,.56 | DIP32,.6 | SOP32,.56 | DIP32,.6 | SOP32,.56 | SOP32,.56 | DIP32,.6 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | SMALL OUTLINE | IN-LINE | SMALL OUTLINE | IN-LINE | SMALL OUTLINE | SMALL OUTLINE | IN-LINE |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 电源 | 3.3 V | 3.3 V | 3/3.3 V | 3/3.3 V | 3/3.3 V | 3/3.3 V | 3/3.3 V | 3/3.3 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 4.826 mm | 3.2 mm | 4.826 mm | 3.2 mm | 4.826 mm | 3.2 mm | 3.2 mm | 4.826 mm |
| 最大待机电流 | 0.00005 A | 0.00005 A | 0.00005 A | 0.00005 A | 0.00005 A | 0.00005 A | 0.00005 A | 0.00005 A |
| 最大压摆率 | 0.03 mA | 0.03 mA | 0.03 mA | 0.03 mA | 0.03 mA | 0.03 mA | 0.03 mA | 0.03 mA |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | YES | NO | YES | NO | YES | YES | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE | GULL WING | THROUGH-HOLE | GULL WING | THROUGH-HOLE | GULL WING | GULL WING | THROUGH-HOLE |
| 端子节距 | 2.54 mm | 1.27 mm | 2.54 mm | 1.27 mm | 2.54 mm | 1.27 mm | 1.27 mm | 2.54 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 宽度 | 15.24 mm | 11.2015 mm | 15.24 mm | 11.2015 mm | 15.24 mm | 11.2015 mm | 11.2015 mm | 15.24 mm |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
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