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SBR3U30P1

产品描述3 A, 30 V, SILICON, RECTIFIER DIODE
产品类别半导体    分立半导体   
文件大小108KB,共4页
制造商Diodes
官网地址http://www.diodes.com/
下载文档 详细参数 全文预览

SBR3U30P1概述

3 A, 30 V, SILICON, RECTIFIER DIODE

3 A, 30 V, 硅, 整流二极管

SBR3U30P1规格参数

参数名称属性值
端子数量2
元件数量1
加工封装描述绿色, 塑料, POWERDI 123, 2 PIN
欧盟RoHS规范Yes
状态ACTIVE
包装形状矩形的
包装尺寸SMALL OUTLINE
表面贴装Yes
端子形式FLAT
端子涂层MATTE 锡
端子位置
包装材料塑料/环氧树脂
结构单一的
二极管元件材料
二极管类型整流二极管
应用SUPER FAST RECOVERY
相数1
最大重复峰值反向电压30 V
最大平均正向电流3 A
最大非重复峰值正向电流75 A

文档预览

下载PDF文档
SBR3U30P1
3.0A SBR
®
SUPER BARRIER RECTIFIER
PowerDI
®
123
Features
Ultra Low Forward Voltage Drop
Superior Reverse Avalanche Capability
Patented Interlocking Clip Design for High Surge Current
Capacity
Patented Super Barrier Rectifier Technology
Soft, Fast Switching Capability
150ºC Operating Junction Temperature
±16KV ESD Protection (HBM, 3B)
±25KV ESD Protection (IEC61000-4-2 Level 4, Air Discharge)
Lead Free Finish, RoHS Compliant (Note 1)
“Green” Molding Compound (No Br, Sb)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: PowerDI 123
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Polarity Indicator: Cathode Band
Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.018 grams (approximate)
®
Top View
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (See Figure 1)
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Non-Repetitive Avalanche Energy
(T
J
= 25°C, I
AS
= 5A, L = 8.5 mH)
Repetitive Peak Avalanche Energy
(1µs, 25°C)
Symbol
V
RRM
V
RWM
V
RM
V
R(RMS)
I
O
I
FSM
E
AS
P
ARM
Value
30
21
3.0
75
105
1100
Unit
V
V
A
A
mJ
W
Thermal Characteristics
Characteristic
Maximum Thermal Resistance
Thermal Resistance Junction to Soldering (Note 2)
Thermal Resistance Junction to Ambient (Note 3)
Thermal Resistance Junction to Ambient (Note 4)
Operating and Storage Temperature Range (Note 5)
Notes:
Symbol
R
θ
JS
R
θ
JA
R
θ
JA
T
J
, T
STG
Value
5
178
123
-65 to +150
Unit
ºC/W
ºC
1. RoHS revision 13.2.2003. High temperature solder exemption applied, see
EU Directive Annex Note 7.
2. Theoretical R
θJS
calculated from the top center of the die straight down to the PCB cathode tab solder junction.
3. FR-4 PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf.
4. Polymide PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf
SBR and PowerDI are registered trademark of Diodes Incorporated.
SBR3U30P1
Document number: DS30974 Rev. 6 - 2
1 of 4
www.diodes.com
October 2008
© Diodes Incorporated

 
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