2SC5865
Transistors
High voltage discharge, High speed switching,
Low Noise (60V, 1A)
2SC5865
Features
1) High speed switching. ( Tf : Typ. : 50ns at I
C
= 1.0A)
2) Low saturation voltage, typically.
(Typ. : 200mV at I
C
= 500mA, I
B
= 50mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Low Noise.
5) Complements the 2SA2092.
Dimensions
(Unit : mm)
TSMT3
2.9
0.4
(3)
1.6
2.8
1.0MAX
0.85
0.7
0~0.1
0.3~0.6
(1)
(2)
0.95 0.95
Applications
High speed switching, Low noise
(1) Base
(2) Emitter
(3) Collector
1.9
0.16
Each lead has same dimensions
Abbreviated symbol : VU
Structure
NPN silicon epitaxial planar transistor
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
2SC5865
Taping
TL
3000
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
60
60
6
1.0
2.0
500
150
−55
to
+150
Unit
V
V
V
A
A
∗
1
mW
∗
2
°C
°C
∗
1 Pw=10ms
∗
2 Each terminal mounted on a recommended land
1/4
2SC5865
Transistors
Electrical characteristics
(Ta=25°C)
Parameter
Symbol
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
fT
Min.
60
60
6
−
−
−
120
−
−
−
−
−
Typ.
−
−
−
−
−
200
−
250
10
50
130
50
Max.
−
−
−
1.0
1.0
500
390
−
−
−
−
−
Unit
V
V
V
µA
µA
mV
−
MHz
pF
ns
ns
ns
I
C
=1mA
I
C
=100µA
I
E
=100µA
V
CB
=40V
V
EB
=4V
I
C
=500mA,
I
B
=50mA
V
CE
=2V,
I
C
=100mA
V
CE
=10V,
I
E
=
−
100mA, f=10MHz
∗1
V
CB
=10V,
I
E
=0mA,
f=1MHz
I
C
=1A,
I
B1
=100mA
I
B2
=
−
100mA
V
CC
25V
∗2
Conditions
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturatioin voltage
DC current gain
Transistor frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
Cob
ton
tstg
tf
∗1
Non repetitive pulse
∗2
See switching characteristics measurement circuits
h
FE
RANK
Q
120-270
R
180-390
2/4
2SC5865
Transistors
Electrical characteristics curves
200
10
1000
COLLECTOR CURRENT : I
C
(mA)
I
B
=500µA
COLLECTOR CURRENT : I
C
(A)
10ms
1
1ms
500µs
100µs
Ta=25°C
V
CC
=25V
I
C
/I
B
=10/1
160
SWITCHING TIME (ns)
450µA
400µA
350µA
300µA
Tstg
120
DC
0.1
500ms
100
80
250µA
200µA
150µA
100µA
50µA
Tf
100ms
0.01
Ton
40
Single non repetitive pulse
0
0µA
0
1
2
3
4
5
0.001
0.1
1
10
100
10
0.01
0.1
1
10
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : I
C
(A)
Fig.1 Typical output characteristics
Fig.2 Safe operating area
Fig.3 Switching Time
1000
Ta=125°C
V
CE
=2V
1000
Ta=25°C
10
I
C
/I
B
=10/1
DC CURRENT GAIN : hFE
COLLECTOR SATURATION
VOLTAGE : V
CE
(sat)(V)
V
CE
=5V
DC CURRENT GAIN : hFE
100
Ta=
−40°C
V
CE
=2V
100
Ta=25°C
V
CE
=3V
1
Ta=125°C
10
10
0.1
Ta=25°C
Ta=
−40°C
1
0.001
0.01
0.1
1
10
1
0.001
0.01
0.1
1
10
0.01
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
Fig.4 DC current gain
vs. collector current (
Ι
)
Fig.5 DC current gain
vs. collector current (
ΙΙ
)
Fig.6 Collector-emitter saturation voltage
vs. collector current (
Ι
)
TRANSITION FREQUENCY : f
T
(MHz)
10
Ta=25°C
10
I
C
/I
B
=10/1
1000
COLLECTOR SATURATION
VOLTAGE : V
CE
(sat)(V)
BASE EMITTER SATURATION
VOLTAGE : V
BE
(sat)
(V)
Ta=25°C
V
CE
=10V
1
100
Ta=
−40°C
1
I
C
/I
B
=100/1
0.1
Ta=25°C
Ta=125°C
10
I
C
/I
B
=20/1
I
C
/I
B
=10/1
0.01
0.001
0.01
0.1
1
10
0.1
0.001
1
0.001
0.01
0.1
1
10
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
EMITTER CURRENT : I
E
(A)
Fig.7 Collector-emitter saturation voltage
vs. collector current (
ΙΙ
)
Fig.8 Base-emitter saturation voltage
vs. collector current
Fig.9 Transition frequency
3/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
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otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1