GT15J331
TOSHIBA Insulated Gate Bipolar Transistor
Silicon N Channel IGBT
GT15J331
High-Power Switching Applications
Motor Control Applications
•
•
•
•
•
Fourth-generation IGBT
Enhancement mode type
High speed: t
f
= 0.10
μs
(typ.)
Low saturation voltage: V
CE (sat)
= 1.75 V (typ.)
FRD included between emitter and collector
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristic
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter-collector forward
current
Collector power dissipation
(Tc
=
25°C)
Junction temperature
Storage temperature range
DC
1 ms
DC
1 ms
Symbol
V
CES
V
GES
I
C
I
CP
I
F
I
FM
P
C
T
j
T
stg
Rating
600
±20
15
30
15
30
70
150
−55
to 150
Unit
V
V
A
JEDEC
A
A
W
°C
°C
―
―
2-10S1C
JEITA
TOSHIBA
Weight: 1.5 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Equivalent Circuit
Collector
Marking
JEDEC
15J331
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
―
―
2-10S2C
JEITA
TOSHIBA
Gate
Emitter
Weight: 1.4 g (typ.)
1
2010-01-07
GT15J331
Electrical Characteristics
(Ta
=
25°C)
Characteristic
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Peak forward voltage
Reverse recovery time
Thermal resistance (IGBT)
Thermal resistance (Diode)
Symbol
I
GES
I
CES
V
GE (OFF)
V
CE (sat)
C
ies
t
r
t
on
t
f
t
off
V
F
t
rr
R
th (j-c)
R
th (j-c)
I
F
=
15 A, V
GE
=
0
I
F
=
15 A, di/dt
= −100
A/μs
⎯
⎯
Test Condition
V
GE
= ±20
V, V
CE
=
0
V
CE
=
600 V, V
GE
=
0
I
C
=
1.5 mA, V
CE
=
5 V
I
C
=
15 A, V
GE
=
15 V
V
CE
=
20 V, V
GE
=
0, f
=
1 MHz
Inductive Load
V
CC
=
300 V, I
C
=
15 A
V
GG
=
15 V, R
G
=
43
Ω
(Note1)
Min
⎯
⎯
4.5
⎯
⎯
Typ.
⎯
⎯
⎯
1.75
2400
0.04
0.22
0.10
0.37
⎯
⎯
⎯
⎯
Max
±500
1.0
7.5
2.3
⎯
Unit
nA
mA
V
V
pF
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0.23
μs
⎯
2.0
200
1.79
3.45
V
ns
°C/W
°C/W
Note1: Switching time measurement circuit and input/output waveforms
V
GE
0
−V
GE
I
C
R
G
V
CE
0
V
CE
10%
t
d (off)
t
f
t
off
t
on
10%
10%
t
d (on)
t
r
10%
L
V
CC
I
C
90%
90%
90%
10%
Note2: Switching loss measurement waveforms
V
GE
0
90%
10%
I
C
V
CE
5%
0
E
off
E
on
2
2010-01-07
GT15J331
I
C
– V
CE
50
20
Common emitter
Tc
=
25°C
40
Common emitter
V
CE
– V
GE
V
CE
(V)
Tc
= −40°C
16
(A)
Collector current I
C
Collector-emitter voltage
30
20
15
10
12
30
15
8
20
9
10
VGE
=
8 V
4
IC
=
6 A
0
0
1
2
3
4
5
0
0
4
8
12
16
20
Collector-emitter voltage
V
CE
(V)
Gate-emitter voltage
V
GE
(V)
V
CE
– V
GE
20
Common emitter
20
Common emitter
V
CE
– V
GE
V
CE
(V)
16
V
CE
(V)
Tc
=
25°C
Tc
=
125°C
16
Collector-emitter voltage
12
30
Collector-emitter voltage
12
30
15
8
15
8
4
IC
=
6 A
4
IC
=
6 A
0
0
4
8
12
16
20
0
0
4
8
12
16
20
Gate-emitter voltage
V
GE
(V)
Gate-emitter voltage
V
GE
(V)
I
C
– V
GE
30
4
Common emitter
VCE
=
5 V
Common emitter
V
CE (sat)
– Tc
Collector-emitter saturation voltage
V
CE (sat)
(V)
VGE
=
15 V
3
30 A
(A)
Collector current I
C
20
2
15 A
IC
=
6 A
10
−40
1
Tc
=
125°C
25
0
0
4
8
12
16
20
0
−60
−20
20
60
100
140
Gate-emitter voltage
V
GE
(V)
Case temperature Tc (°C)
3
2010-01-07
GT15J331
C – V
CE
3000
Cies
500
Common emitter
V
CE
, V
GE
– Q
G
20
V
CE
(V)
16
300
Collector-emitter voltage
Capacitance C
300
200
100
Coes
Common emitter
10
VGE
=
0
f
=
1 MHz
Tc
=
25°C
3
10
30
100
300
1000
3000
Cres
200
30
VCE
=
100 V
8
100
4
3
1
0
0
10
20
30
40
50
60
0
70
Collector-emitter voltage
V
CE
(V)
Gate charge Q
G
(nC)
I
F
−
V
F
30
100
Common collector
VGE
=
0
Common collector
di/dt
= −100
A/μS
VGE
=
0
: Tc
=
25°C
: Tc
=
125°C
t
rr
, I
rr
−
I
F
1000
25
Reverse recovery current I
rr
(A)
(A)
Forward current I
F
20
15
Tc
=
125°C
10
25
−40
5
10
trr
100
Irr
0
0
0.4
0.8
1.2
1.6
2.0
1
0
3
6
9
12
10
15
Forward voltage V
F
(V)
Forward current I
F
(A)
Safe operating area
50
30
IC max (pulse)*
10 ms*
50
50
μs*
30
Reverse bias SOA
(A)
Collector current I
C
100
μs*
Collector current I
C
10 IC max
(continuous)
5
3
DC
operation
(A)
10
5
3
1
*:
Single
nonrepetitive pulse
Tc
=
25°C
0.3
Curves must be derated
linearly with increase in
temperature.
0.1
1
3
10
0.5
1 ms*
1
0.5
0.3
Tj
≤
125°C
VGE
=
15 V
RG
=
43
Ω
30
100
300
1000
0.1
1
3
10
30
100
300
1000
Collector-emitter voltage
V
CE
(V)
Collector-emitter voltage
V
CE
(V)
5
2010-01-07
Reverse recovery time
trr (ns)
Gate-emitter voltage
300
12
V
GE
(V)
1000
RL
=
20
Ω
400 Tc
=
25°C
(pF)
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