Freescale Semiconductor
Technical Data
Document Number: MRF21030
Rev. 12, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
2000 to 2200 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
•
Wideband CDMA Performance: - 45 dB ACPR @ 4.096 MHz, 28 Volts
Output Power — 3.5 Watts
Power Gain — 14 dB
Efficiency — 15%
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2110 MHz, 30 Watts CW
Output Power
Features
•
High Gain, High Efficiency and High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Low Gold Plating Thickness on Leads, 40μ″ Nominal.
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
MRF21030LR3
MRF21030LSR3
2200 MHz, 30 W, 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465E - 04, STYLE 1
NI - 400
MRF21030LR3
CASE 465F - 04, STYLE 1
NI - 400S
MRF21030LSR3
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
C
T
J
Value
- 0.5, +65
- 0.5, +15
83.3
0.48
- 65 to +150
150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
2.1
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Class
2 (Minimum)
M3 (Minimum)
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF21030LR3 MRF21030LSR3
1
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Drain- Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 20
μA)
Zero Gate Voltage Drain Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate- Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 100
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 250 mA)
Drain- Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 1 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 1 Adc)
Dynamic Characteristics
Input Capacitance (Including Input Matching Capacitor in Package)
(1)
(V
DS
= 28 Vdc, V
GS
= 0, f = 1 MHz)
Output Capacitance
(1)
(V
DS
= 28 Vdc, V
GS
= 0, f = 1 MHz)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc, V
GS
= 0, f = 1 MHz)
Functional Tests
(In Freescale Test Fixture, 50 ohm system)
Two - Tone Common - Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
Two - Tone Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
3rd Order Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
Two - Tone Common - Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Two - Tone Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
3rd Order Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
1. Part is internally matched both on input and output.
G
ps
—
13
—
dB
C
iss
C
oss
C
rss
—
—
—
98.5
37
1.3
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2
2
—
—
3
3.3
0.29
2
4
4.5
0.4
—
Vdc
Vdc
Vdc
S
V
(BR)DSS
I
DSS
I
GSS
65
—
—
—
—
—
—
1
1
Vdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
η
—
33
—
%
IMD
—
- 30
—
dBc
IRL
—
- 13
—
dB
G
ps
12
13
—
dB
η
31
33
—
%
IMD
—
- 30
- 27.5
dBc
IRL
—
- 13
-9
dB
MRF21030LR3 MRF21030LSR3
2
RF Device Data
Freescale Semiconductor
V
BIAS
+
C6
C5
B1
B2
V
SUPPLY
+
C12
C13
R1
+
C4
C8
C10
C11
R2
L1
RF
INPUT
L2
RF
OUTPUT
Z1
Z2
Z3
C2
C1
Z4
Z5
Z6
DUT
Z7
Z8
Z9
C9
Z10
C3
C7
B1, B2
C1
C2
C3
C4
C5, C12
C6, C13
C7, C8
C9
C10
C11
L1, L2
R1, R2
Short Ferrite Beads
1 pF Chip Capacitor
4.7 pF Chip Capacitor
0.5 pF Chip Capacitor
3.9 pF Chip Capacitor
0.1
μF
Chip Capacitors
470
μF,
63 V Electrolytic Chip Capacitors
0.3 pF Chip Capacitors
3.6 pF Chip Capacitor
22
μF
Tantalum Chip Capacitor
5.1 pF Chip Capacitor
12.5 nH Inductors
12
Ω
Chip Resistors (1206)
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
PCB
0.153″ x 0.087″ Microstrip
0.509″ x 0.156″ Microstrip
0.572″ x 0.087″ Microstrip
0.509″ x 0.232″ Microstrip
0.277″ x 0.143″ Microstrip
0.200″ x 0.305″ Microstrip
0.200″ x 0.511″ Microstrip
0.510″ x 0.328″ Microstrip
0.608″ x 0.081″ Microstrip
Taconic TLX8, 30 mils,
ε
r
= 2.55
Figure 1. MRF21030LR3(SR3) Test Circuit Schematic
C13
+
V BIAS
C6
C5
R1
B1
C4
WB1
WB2
C2
L1
C10
C8
L2
C7
CUT OUT AREA
R2
B2
C12
C11
+
VSUPPLY
C9
C1
C3
Ground
Ground
MRF21030
Rev 1
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF21030LR3(SR3) Test Circuit Component Layout
MRF21030LR3 MRF21030LSR3
RF Device Data
Freescale Semiconductor
3
TYPICAL CHARACTERISTICS
η
, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATION DISTORTION (dBc)
60
50
IRL
40
30
20
10
IMD
0
2080
2100
2120
2140
2160
f, FREQUENCY (MHz)
2180
−35
2200
η
V
DD
= 28 Vdc, P
out
= 30 W (PEP), I
DQ
= 250 mA
Two−Tone Measurement, 100 kHz Tone Spacing
G
ps
−15
−20
−25
−30
−5
−10
η
, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
30
V
DD
= 28 Vdc, I
DQ
= 250 mA, f = 2140 MHz
Channel Spacing (Channel Bandwidth):
4.096 MHz (5 MHz)
−20
ADJACENT CHANNEL POWER RATIO (dB)
IMD, INTERMODULATION DISTORTION (dBc)
25
−30
20
ACPR
−40
15
η
G
ps
−50
10
−60
5
0
1
3
2
4
5
P
out
, OUTPUT POWER (WATTS Avg.) CDMA
6
−70
Figure 3. Class AB Broadband Circuit Performance
Figure 4. CDMA ACPR, Power Gain and
Drain Efficiency versus Output Power
−25
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
V
DD
= 28 Vdc, f = 2140 MHz
Two−Tone Measurement,
−30
100 kHz Tone Spacing
−35
−40
−45
−50
−55
1.0
200 mA
250 mA
400 mA
300 mA
350 mA
10
P
out
, OUTPUT POWER (WATTS) PEP
100
−20
−30
V
DD
= 28 Vdc, I
DQ
= 250 mA, f = 2140 MHz
Two−Tone Measurement,
100 kHz Tone Spacing
3rd Order
−40
7th Order
5th Order
−50
−60
−70
1.0
10
P
out
, OUTPUT POWER (WATTS) PEP
100
Figure 5. Intermodulation Distortion
versus Output Power
Figure 6. Intermodulation Distortion Products
versus Output Power
16
15
−22
−24
G ps , POWER GAIN (dB)
15
G ps , POWER GAIN (dB)
400 mA
350 mA
300 mA
250 mA
200 mA
V
DD
= 28 Vdc, f = 2140 MHz
Two−Tone Measurement, 100 kHz Tone Spacing
13
1.0
10
P
out
, OUTPUT POWER (WATTS) PEP
100
14.5
G
ps
14
IMD
−26
−28
−30
−32
14
13.5
P
out
= 30 W (PEP)
I
DQ
= 250 mA, f = 2140 MHz
Two−Tone Measurement, 100 kHz Tone Spacing
22
24
26
28
30
32
−34
−36
−38
34
13
20
V
DD
, DRAIN VOLTAGE (VOLTS)
Figure 7. Power Gain versus Output Power
Figure 8. Power Gain and
Intermodulation Distortion versus Supply Voltage
MRF21030LR3 MRF21030LSR3
4
RF Device Data
Freescale Semiconductor
Z
o
= 25
Ω
f = 2170 MHz
Z
load
f = 2110 MHz
f = 2170 MHz
Z
source
f = 2110 MHz
V
DD
= 28 V, I
DQ
= 250 mA, P
out
= 30 W PEP
f
MHz
2110
2140
2170
Z
source
Ω
15.3 - j9.4
14.6 - j9.4
14.3 - j8.8
Z
load
Ω
3.7 - j0.78
3.4 - j0.37
3.0 + j0.13
Z
source
= Test circuit impedance as measured from
gate to ground.
Z
load
= Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Z
source
Z
load
Figure 9. Series Equivalent Source and Load Impedance
MRF21030LR3 MRF21030LSR3
RF Device Data
Freescale Semiconductor
5
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