电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

FM25L16-G

产品描述Memory Circuit, 2KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8
产品类别存储    存储   
文件大小152KB,共14页
制造商Ramtron International Corporation (Cypress Semiconductor Corporation)
官网地址http://www.cypress.com/
标准
下载文档 详细参数 选型对比 全文预览

FM25L16-G在线购买

供应商 器件名称 价格 最低购买 库存  
FM25L16-G - - 点击查看 点击购买

FM25L16-G概述

Memory Circuit, 2KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8

FM25L16-G规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Ramtron International Corporation (Cypress Semiconductor Corporation)
零件包装代码SOIC
包装说明SOP,
针数8
Reach Compliance Codeunknown
JESD-30 代码R-PDSO-G8
长度4.9 mm
内存密度16384 bit
内存集成电路类型MEMORY CIRCUIT
内存宽度8
湿度敏感等级1
功能数量1
端子数量8
字数2048 words
字数代码2000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织2KX8
封装主体材料PLASTIC/EPOXY
封装代码SOP
封装形状RECTANGULAR
封装形式SMALL OUTLINE
认证状态Not Qualified
筛选级别AEC-Q100
座面最大高度1.75 mm
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)2.7 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子形式GULL WING
端子节距1.27 mm
端子位置DUAL
宽度3.9 mm
Base Number Matches1

文档预览

下载PDF文档
Preliminary
FM25L16
16Kb FRAM Serial 3V Memory
Features
16K bit Ferroelectric Nonvolatile RAM
Organized as 2,048 x 8 bits
Unlimited Read/Write Cycles
10 Year Data Retention
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Very Fast Serial Peripheral Interface - SPI
Up to 20 MHz Frequency
Direct Hardware Replacement for EEPROM
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
Sophisticated Write Protection Scheme
Hardware Protection
Software Protection
Low Power Consumption
Low Voltage Operation 2.7-3.6V
1
µA
Standby Current
Industry Standard Configuration
Industrial Temperature -40°C to +85°C
“Green” 8-pin SOIC and 8-pin DFN Packages
DFN Footprint Conforms to TSSOP-8
Description
The FM25L16 is a 16-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or FRAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 10 years
while eliminating the complexities, overhead, and
system level reliability problems caused by
EEPROM and other nonvolatile memories.
Unlike serial EEPROMs, the FM25L16 performs
write operations at bus speed. No write delays are
incurred. The next bus cycle may commence
immediately without the need for data polling. The
next bus cycle may start immediately. In addition, the
product offers virtually unlimited write endurance,
orders of magnitude more endurance than EEPROM.
Also, FRAM exhibits much lower power during
writes than EEPROM since write operations do not
require an internally elevated power supply voltage
for write circuits.
These capabilities make the FM25L16 ideal for
nonvolatile memory applications requiring frequent
or rapid writes. Examples range from data collection,
where the number of write cycles may be critical, to
demanding industrial controls where the long write
time of EEPROM can cause data loss.
The FM25L16 provides substantial benefits to users
of serial EEPROM as a hardware drop-in
replacement. The FM25L16 uses the high-speed SPI
bus, which enhances the high-speed write capability
of FRAM technology. Device specifications are
guaranteed over an industrial temperature range of
-40°C to +85°C.
This is a product that has fixed target specifications but are
subject to change pending characterization results.
Pin Configuration
CS
SO
WP
VSS
1
2
3
4
8
7
6
5
VDD
HOLD
SCK
SI
/CS
SO
/WP
VSS
1
2
3
4
Top View
8
7
6
5
VDD
/HOLD
SCK
SI
Pin Name
/CS
/WP
/HOLD
SCK
SI
SO
VDD
VSS
Function
Chip Select
Write Protect
Hold
Serial Clock
Serial Data Input
Serial Data Output
Supply Voltage
Ground
Ordering Information
FM25L16-G
FM25L16-DG
“Green” 8-pin SOIC
“Green” 8-pin DFN
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000
www.ramtron.com
Page 1 of 14
Rev. 1.0
Oct 2004

FM25L16-G相似产品对比

FM25L16-G FM25L16-DG
描述 Memory Circuit, 2KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8 Memory Circuit, 2KX8, CMOS, PDSO8, 3 X 6.40 MM, 0.65 MM PITCH, GREEN, TDFN-8
是否Rohs认证 符合 符合
厂商名称 Ramtron International Corporation (Cypress Semiconductor Corporation) Ramtron International Corporation (Cypress Semiconductor Corporation)
零件包装代码 SOIC DFN
包装说明 SOP, HVSON,
针数 8 8
Reach Compliance Code unknown unknown
JESD-30 代码 R-PDSO-G8 R-PDSO-N8
长度 4.9 mm 6.4 mm
内存密度 16384 bit 16384 bit
内存集成电路类型 MEMORY CIRCUIT MEMORY CIRCUIT
内存宽度 8 8
湿度敏感等级 1 1
功能数量 1 1
端子数量 8 8
字数 2048 words 2048 words
字数代码 2000 2000
工作模式 SYNCHRONOUS SYNCHRONOUS
最高工作温度 85 °C 85 °C
最低工作温度 -40 °C -40 °C
组织 2KX8 2KX8
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOP HVSON
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
认证状态 Not Qualified Not Qualified
座面最大高度 1.75 mm 0.8 mm
最大供电电压 (Vsup) 3.6 V 3.6 V
最小供电电压 (Vsup) 2.7 V 2.7 V
标称供电电压 (Vsup) 3.3 V 3.3 V
表面贴装 YES YES
技术 CMOS CMOS
温度等级 INDUSTRIAL INDUSTRIAL
端子形式 GULL WING NO LEAD
端子节距 1.27 mm 0.65 mm
端子位置 DUAL DUAL
宽度 3.9 mm 3 mm
Base Number Matches 1 1

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1481  844  2299  681  596  42  2  20  45  30 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved