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FM25L256-DG

产品描述Memory Circuit, 32KX8, CMOS, PDSO8, 4 X 4.50 MM, 0.95 MM PITCH, GREEN, TDFN-8
产品类别存储    存储   
文件大小175KB,共14页
制造商Ramtron International Corporation (Cypress Semiconductor Corporation)
官网地址http://www.cypress.com/
标准
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FM25L256-DG概述

Memory Circuit, 32KX8, CMOS, PDSO8, 4 X 4.50 MM, 0.95 MM PITCH, GREEN, TDFN-8

FM25L256-DG规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Ramtron International Corporation (Cypress Semiconductor Corporation)
零件包装代码DFN
包装说明HVSON,
针数8
Reach Compliance Codeunknown
JESD-30 代码R-PDSO-N8
长度4.5 mm
内存密度262144 bit
内存集成电路类型MEMORY CIRCUIT
内存宽度8
湿度敏感等级1
功能数量1
端子数量8
字数32768 words
字数代码32000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-25 °C
组织32KX8
封装主体材料PLASTIC/EPOXY
封装代码HVSON
封装形状RECTANGULAR
封装形式SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
座面最大高度0.8 mm
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)3 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级OTHER
端子形式NO LEAD
端子节距0.95 mm
端子位置DUAL
宽度4 mm
Base Number Matches1

文档预览

下载PDF文档
Preliminary
FM25L256
256Kb FRAM Serial 3V Memory
Features
256K bit Ferroelectric Nonvolatile RAM
Organized as 32,768 x 8 bits
Unlimited Read/Write Cycles
10 Year Data Retention
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Very Fast Serial Peripheral Interface - SPI
Up to 25 MHz Frequency
Direct Hardware Replacement for EEPROM
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
Write Protection Scheme
Hardware Protection
Software Protection
Low Power Consumption
Low Voltage Operation 2.7V – 3.6V
5
µA
Standby Current
Industry Standard Configurations
Industrial Temperature -40°C to +85°C
8-pin SOIC and 8-pin DFN Packages
“Green” Packaging Options
Description
The FM25L256 is a 256-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or FRAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 10 years
while eliminating the complexities, overhead, and
system level reliability problems caused by
EEPROM and other nonvolatile memories.
Unlike serial EEPROMs, the FM25L256 performs
write operations at bus speed. No write delays are
incurred. The next bus cycle may commence
immediately without the need for data polling. The
next bus cycle may start immediately. In addition, the
product offers virtually unlimited write endurance.
Also, FRAM exhibits much lower power
consumption than EEPROM.
These capabilities make the FM25L256 ideal for
nonvolatile memory applications requiring frequent
or rapid writes or low power operation. Examples
range from data collection, where the number of
write cycles may be critical, to demanding industrial
controls where the long write time of EEPROM can
cause data loss.
The FM25L256 provides substantial benefits to users
of serial EEPROM as a hardware drop-in
replacement. The FM25L256 uses the high-speed SPI
bus, which enhances the high-speed write capability
of FRAM technology. Device specifications are
guaranteed over an industrial temperature range of
-40°C to +85°C.
Pin Configuration
CS
SO
WP
VSS
1
2
3
4
8
7
6
5
VDD
HOLD
SCK
SI
Pin Name
/CS
/WP
/HOLD
SCK
SI
SO
VDD
VSS
Function
Chip Select
Write Protect
Hold
Serial Clock
Serial Data Input
Serial Data Output
Supply Voltage (2.7 to 3.6V)
Ground
Ordering Information
FM25L256-S
8-pin SOIC
FM25L256-G
“Green” 8-pin SOIC
FM25L256-DG “Green” 8-pin DFN *
* DFN samples available now. Production status in
1Q05.
This is a product that has fixed target specifications but are subject
to change pending characterization results.
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000
www.ramtron.com
Rev. 1.1
Sept. 2004
Page 1 of 14

FM25L256-DG相似产品对比

FM25L256-DG FM25L256-G FM25L256-S
描述 Memory Circuit, 32KX8, CMOS, PDSO8, 4 X 4.50 MM, 0.95 MM PITCH, GREEN, TDFN-8 Memory Circuit, 32KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8 Memory Circuit, 32KX8, CMOS, PDSO8, MS-012AA, SOIC-8
是否Rohs认证 符合 符合 不符合
厂商名称 Ramtron International Corporation (Cypress Semiconductor Corporation) Ramtron International Corporation (Cypress Semiconductor Corporation) Ramtron International Corporation (Cypress Semiconductor Corporation)
零件包装代码 DFN SOIC SOIC
包装说明 HVSON, SOP, SOP,
针数 8 8 8
Reach Compliance Code unknown unknown unknown
JESD-30 代码 R-PDSO-N8 R-PDSO-G8 R-PDSO-G8
长度 4.5 mm 4.9 mm 4.9 mm
内存密度 262144 bit 262144 bit 262144 bit
内存集成电路类型 MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT
内存宽度 8 8 8
功能数量 1 1 1
端子数量 8 8 8
字数 32768 words 32768 words 32768 words
字数代码 32000 32000 32000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 85 °C 85 °C 85 °C
最低工作温度 -25 °C -25 °C -25 °C
组织 32KX8 32KX8 32KX8
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 HVSON SOP SOP
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE SMALL OUTLINE SMALL OUTLINE
座面最大高度 0.8 mm 1.75 mm 1.75 mm
最大供电电压 (Vsup) 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) 3 V 3 V 3 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V
表面贴装 YES YES YES
技术 CMOS CMOS CMOS
温度等级 OTHER OTHER OTHER
端子形式 NO LEAD GULL WING GULL WING
端子节距 0.95 mm 1.27 mm 1.27 mm
端子位置 DUAL DUAL DUAL
宽度 4 mm 3.9 mm 3.9 mm
Base Number Matches 1 1 1
湿度敏感等级 1 1 -

 
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