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FM25L256B-G

产品描述Memory Circuit, 32KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8
产品类别存储    存储   
文件大小162KB,共14页
制造商Ramtron International Corporation (Cypress Semiconductor Corporation)
官网地址http://www.cypress.com/
标准
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FM25L256B-G概述

Memory Circuit, 32KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8

FM25L256B-G规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Ramtron International Corporation (Cypress Semiconductor Corporation)
零件包装代码SOIC
包装说明SOP,
针数8
Reach Compliance Codeunknown
JESD-30 代码R-PDSO-G8
JESD-609代码e3
长度4.9 mm
内存密度262144 bit
内存集成电路类型MEMORY CIRCUIT
内存宽度8
湿度敏感等级1
功能数量1
端子数量8
字数32768 words
字数代码32000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织32KX8
封装主体材料PLASTIC/EPOXY
封装代码SOP
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
认证状态Not Qualified
座面最大高度1.75 mm
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)2.7 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Matte Tin (Sn)
端子形式GULL WING
端子节距1.27 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度3.9 mm
Base Number Matches1

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FM25L256B
256Kb FRAM Serial 3V Memory
Features
256K bit Ferroelectric Nonvolatile RAM
Organized as 32,768 x 8 bits
Unlimited Read/Write Cycles
10 Year Data Retention
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Very Fast Serial Peripheral Interface - SPI
Up to 20 MHz Frequency
Direct Hardware Replacement for EEPROM
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
Write Protection Scheme
Hardware Protection
Software Protection
Low Power Consumption
Low Voltage Operation 2.7V – 3.6V
Industry Standard Configurations
Industrial Temperature -40°C to +85°C
8-pin SOIC and 8-pin TDFN Packages
“Green”/RoHS Packaging
Description
The FM25L256B is a 256-kilobit nonvolatile
memory employing an advanced ferroelectric
process. A ferroelectric random access memory or
FRAM is nonvolatile and performs reads and writes
like a RAM. It provides reliable data retention for 10
years while eliminating the complexities, overhead,
and system level reliability problems caused by
EEPROM and other nonvolatile memories.
Unlike serial EEPROMs, the FM25L256B performs
write operations at bus speed. No write delays are
incurred. Data is written to the memory array
immediately after each byte has been transferred to
the device. The next bus cycle may commence
without the need for data polling. In addition, the
product offers virtually unlimited write endurance.
FRAM also exhibits much lower power consumption
than EEPROM.
These capabilities make the FM25L256B ideal for
nonvolatile memory applications requiring frequent
or rapid writes or low power operation. Examples
range from data collection, where the number of
write cycles may be critical, to demanding industrial
controls where the long write time of EEPROM can
cause data loss.
The FM25L256B provides substantial benefits to
users of serial EEPROM as a hardware drop-in
replacement. The FM25L256B uses the high-speed
SPI bus, which enhances the high-speed write
capability
of
FRAM
technology.
Device
specifications are guaranteed over an industrial
temperature range of -40°C to +85°C.
This product conforms to specifications per the terms of the Ramtron
standard warranty. The product has completed Ramtron’s internal
qualification testing and has reached production status.
Pin Configuration
CS
SO
WP
VSS
1
2
3
4
8
7
6
5
VDD
HOLD
SCK
SI
/CS
SO
/WP
VSS
1
2
3
4
8
7
6
5
VDD
/HOLD
SCK
SI
Top View
Pin Name
/CS
/WP
/HOLD
SCK
SI
SO
VDD
VSS
Function
Chip Select
Write Protect
Hold
Serial Clock
Serial Data Input
Serial Data Output
Supply Voltage (2.7 to 3.6V)
Ground
Ordering Information
FM25L256B-G
FM25L256B-DG
“Green”/RoHS 8-pin SOIC
“Green”/RoHS 8-pin TDFN
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000
http://www.ramtron.com
Rev. 3.0
July 2007
Page 1 of 14

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