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FM25L512-DGTR

产品描述Memory Circuit, 64KX8, CMOS, PDSO8, 5 X 6 MM, 1.27 MM PITCH, GREEN, TDFN-8
产品类别存储    存储   
文件大小170KB,共13页
制造商Ramtron International Corporation (Cypress Semiconductor Corporation)
官网地址http://www.cypress.com/
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FM25L512-DGTR概述

Memory Circuit, 64KX8, CMOS, PDSO8, 5 X 6 MM, 1.27 MM PITCH, GREEN, TDFN-8

FM25L512-DGTR规格参数

参数名称属性值
厂商名称Ramtron International Corporation (Cypress Semiconductor Corporation)
零件包装代码DFN
包装说明VSOP,
针数8
Reach Compliance Codeunknown
JESD-30 代码R-PDSO-G8
长度6 mm
内存密度524288 bit
内存集成电路类型MEMORY CIRCUIT
内存宽度8
功能数量1
端子数量8
字数65536 words
字数代码64000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织64KX8
封装主体材料PLASTIC/EPOXY
封装代码VSOP
封装形状RECTANGULAR
封装形式SMALL OUTLINE, VERY THIN PROFILE
认证状态Not Qualified
座面最大高度0.8 mm
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)3 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子形式GULL WING
端子节距1.27 mm
端子位置DUAL
宽度5 mm
Base Number Matches1

文档预览

下载PDF文档
Pre-Production
FM25L512
512Kb F-RAM Serial 3V Memory
Features
512K bit Ferroelectric Nonvolatile RAM
Organized as 65,536 x 8 bits
Unlimited Read/Write Cycles
10 Year Data Retention
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Very Fast Serial Peripheral Interface - SPI
Up to 20 MHz Frequency
Direct Hardware Replacement for EEPROM
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
Write Protection Scheme
Hardware Protection
Software Protection
Low Power Consumption
Low Voltage Operation 3.0V – 3.6V
20
µA
Standby Current
Industry Standard Configurations
Industrial Temperature -40°C to +85°C
8-pin “Green”/RoHS TDFN Package
Footprint Compatible with SOIC-8 (see pg 12)
Description
The FM25L512 is a 512-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or F-RAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 10 years
while eliminating the complexities, overhead, and
system level reliability problems caused by
EEPROM and other nonvolatile memories.
Unlike serial EEPROMs, the FM25L512 performs
write operations at bus speed. No write delays are
incurred. The next bus cycle may commence
immediately without the need for data polling. The
next bus cycle may start immediately. In addition, the
product offers virtually unlimited write endurance.
Also, F-RAM exhibits much lower power
consumption than EEPROM.
These capabilities make the FM25L512 ideal for
nonvolatile memory applications requiring frequent
or rapid writes or low power operation. Examples
range from data collection, where the number of
write cycles may be critical, to demanding industrial
controls where the long write time of EEPROM can
cause data loss.
The FM25L512 provides substantial benefits to users
of serial EEPROM as a hardware drop-in
replacement. The FM25L512 uses the high-speed SPI
bus, which enhances the high-speed write capability
of F-RAM technology. Device specifications are
guaranteed over an industrial temperature range of
-40°C to +85°C.
D
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5
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25
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ti v
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rna
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Pin Configuration
Top View
/CS
SO
1
2
3
4
8
VDD
SCK
SI
7
6
5
/HOLD
/WP
VSS
Pin Name
/CS
/WP
/HOLD
SCK
SI
SO
VDD
VSS
Function
Chip Select
Write Protect
Hold
Serial Clock
Serial Data Input
Serial Data Output
Supply Voltage (3.0 to 3.6V)
Ground
Ordering Information
FM25L512-DG*
FM25L512-DGTR*
8-pin “Green”/RoHS TDFN
8-pin “Green”/RoHS TDFN
in Tape & Reel
* Last time buy Nov. 2009.
This is a product in the pre-production phase of development. Device
characterization is complete and Ramtron does not expect to change
the specifications. Ramtron will issue a Product Change Notice if any
specification changes are made.
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000
www.ramtron.com
Rev. 2.2
Oct. 2009
Page 1 of 13

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