Ultra-Large Area InGaAs p-i-n Photodiode
35PD10M
The 35PD10M is the largest standard InGaAs detector available on the market. Both circular
(10 mm diameter) and square (10 mm edge length) formats are offered. Standard packaging
includes a hermetic TO-3 header and a ceramic flat pack. Custom packaging would also be
available. Reliability is assured by planar, dielectric-passivated design. Applications include
high sensitivity instrumentation and test equipment.
Features
Planar Structure
Dielectric Passivation
High Dynamic Impedance
High Responsivity
Device Characteristics:
Parameters
Dark Current
Capacitance
Responsivity
Test Conditions
-1.0V
-1.0V
1300nm
1550nm
Rise Time
( est. 50 ohm load )
Dynamic Impedance
0V
Spectral Range
Reverse Voltage
Forward Current
Reverse Current
Operating Temperature
Storage Temperature
Soldering Temperature
Typical Performance
Units
20
µA
3
nF
0.9
A/W
1.0
A/W
1.0
µs
>60
K ohm
850 - 1650
nm
1 Volt
200 mA
30 mA
o
-40 C to + 85
o
C
-40
o
C to + 85
o
C
250
o
C
Absolute Maximum Ratings
829 Flynn Road, Camarillo, CA 93012
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