UNISONIC TECHNOLOGIES CO., LTD
UF640
18 A, 200 V, 0.18 OHM,
N-CHANNEL POWER MOSFET
DESCRIPTION
These kinds of n-channel power mos field effect transistor have
low conduction power loss, high input impedance, and high
switching speed, Linear Transfer Characteristics, so can be use in
a variety of power conversion applications.
The UF640 suitable for resonant and PWM converter topologies.
1
TO-220
MOSFET
1
FEATURES
* R
DS(ON)
=0.18Ω@V
GS
= 10V.
* Ultra Low gate charge (typical 43nC)
* Low reverse transfer capacitance (C
RSS
= typical 100 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
TO-220F
*Pb-free plating product number: UF640L
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
UF640-TA3-T
UF640L-TA3-T
UF640-TF3-T
UF640L-TF3-T
Package
TO-220
TO-220F
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
UF640L-TA3-T
(1)Packing Type
(2)Package Type
(3)Lead Plating
(1) T: Tube
(2) TA3: TO-220, TF3: TO-220F
(3) L: Lead Free Plating Blank: Pb/Sn
,
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Copyright © 2005 Unisonic Technologies Co., Ltd
1 of 5
Ver.A
UF640
ABSOLUTE MAXIMUM RATING
(T
C
= 25℃, unless otherwise specified)
PARAMETER
SYMBOL
V
DSS
V
DGR
V
GSS
MOSFET
RATINGS
UNIT
Drain-Source Voltage
200
V
Drain-Gate Voltage (R
GS
= 20kΩ)
200
V
Gate-Source Voltage
±20
V
T
C
= 25℃
18
A
Continuous Drain Current
I
D
T
C
= 100℃
11
A
Pulsed Drain Current (Note
2)
I
DM
72
A
Single Pulse Avalanche Energy Rating (Note
3)
E
AS
580
mJ
Maximum Power Dissipation
125
W
P
D
W/℃
Dissipation Derating Factor
1.0
Junction Temperature
T
J
+150
℃
Storage Temperature
T
STG
-55 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Thermal Resistance, Channel to Ambient
Thermal Resistance, Channel to Case
SYMBOL
θ
JA
θ
JC
MIN
TYP
MAX
62
1
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25
℃
, unless otherwise specified)
PARAMETER
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source Leakage Current
On-State Drain Current
Gate-Source Leakage Current
Drain-Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate-Source Charge
Gate-Drain “Miller” Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
SYMBOL
TEST CONDITIONS
BV
DSS
I
D
= 250µA, V
GS
= 0V
V
GS(THR)
V
GS
= V
DS
, I
D
= 250µA
V
DS
= Rated BV
DSS
, V
GS
= 0V
I
DSS
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V,
T
J
= 125℃
I
D(ON)
V
DS
>I
D(ON)
x R
DS(ON)
MAX, V
GS
= 10V
I
GSS
V
GS
= ±20V
R
DS(ON)
I
D
= 10A, V
GS
= 10V
g
FS
V
DS
≥
10V, I
D
= 11A
C
ISS
C
OSS
V
DS
= 25V, V
GS
= 0V, f = 1MHz
C
RSS
V
GS
= 10V, I
D
≈
18A, V
DS
= 0.8 x
Q
G(TOT)
Rated BV
DSS
Gate Charge is
Essentially Independent of
Q
GS
Operating Temperature I
G(REF)
=
Q
GD
1.5mA
t
D(ON)
V
DD
= 100V, I
D
≈
18A, R
GS
= 9.1Ω,
R
L
= 5.4Ω,
t
R
t
D(OFF)
MOSFET Switching Times are
Essentially Independent of
t
F
Operating Temperature
MIN
200
2
TYP
MAX UNIT
V
4
V
25
µA
250
18
0.14
10
1275
400
100
43
8
22
13
50
46
35
21
77
68
54
±100
0.18
µA
A
nA
Ω
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
6.7
64
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2 of 5
Ver.A
UF640
ELECTRICAL CHARACTERISTICS(Cont.)
TEST CONDITIONS
MIN
Measured
From the
Contact Screw
on Tab to
Center of Die
Modified MOSFET Symbol
Internal Drain Inductance
L
D
Showing the Internal
Measured
From the Drain
Devices Inductances
Lead, 6mm
D
(0.25in) From
Package to
L
D
Center of Die
G
Measured
L
S
From the
S
Source Lead,
6mm (0.25in)
Internal Source Inductance
L
S
from Header to
Source
Bonding Pad
SOURCE TO DRAIN DIODE SPECIFICATIONS
Diode Forward Voltage (Note 1)
V
SD
T
J
= 25℃, I
S
= 18A, V
GS
= 0V,
Continuous Source Current (body
Integral Reverse p-n Junction
I
S
diode)
Diode in the MOSFET
Drain
PARAMETER
SYMBOL
TYP
MOSFET
MAX UNIT
3.5
nH
4.5
nH
7.5
nH
2.0
18
V
A
Pulse Source Current (body diode)
(Note 1)
I
SM
Gate
Sourse
72
A
T
J
= 25℃, I
S
= 18A,
120
240
530
ns
dI
S
/dt = 100A/µs
T
J
= 25℃, I
S
= 18A,
1.3
2.8
5.6
µC
Reverse Recovery Charge
Q
RR
dI
S
/dt = 100A/µs
Note 1. Pulse Test: Pulse width
≤
300µs, duty cycle
≤
2%.
2. Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance
curve.
3. L = 3.37mH, V
DD
= 50V, R
G
= 25Ω, peak I
AS
= 18A, starting T
J
= 25℃.
Reverse Recovery Time
t
RR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 5
Ver.A
UF640
TEST CIRCUIT
V
DS
L
BV
DSS
MOSFET
R
G
D.U.T.
V
DD
I
AS
V
DS
V
DD
0.01Ω
I
AS
Figure 1A. Unclamped Energy Test Circuit
0
t
p
t
AV
Figure 1B. Unclamped Energy Waveforms
V
DS
R
L
90%
10%
90%
R
G
V
DD
V
GS
D.U.T.
0
V
GS
10%
0
50%
PULSE WIDTH
50%
t
D(ON)
t
ON
Figure 2A. Switching Time Test Circuit
t
R
t
D(OFF)
t
F
t
OFF
Figure 2B. Resistive Switching Waveforms
CURRENT
REGULATOR
12V
BATTERY
50kΩ
0.2µF
0.3µF
D
V
DS
(ISOLATED
SUPPLY)
SAME TYPE
AS DUT
V
DD
Q
G(TOT)
Q
GS
Q
GD
V
GS
V
DS
G
0
I
G(REF)
I
G
CURRENT
SAMPLING
RESISTOR
S
I
D
CURRENT
SAMPLING
RESISTOR
DUT
0
I
G(REF)
0
Figure 3A. Gate Charge Test Circuit
Figure 3B. Gate Charge Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 5
Ver.A
UF640
TYPICAL CHARACTERISTICS
Saturation Characteristics
30
24
Drain Current, I
D
(A)
MOSFET
18
12
6
0
0
Drain to Source on Resistance
R
DS(ON)
(Ω)
Pulse Duration = 80µs
Duty Cycle = 0.5% MAX
Drain to Source On Resistance vs. Gate
Voltage And Drain Current
1.5
Pulse Duration = 80µs
Duty Cycle = 0.5% Max
1.2
0.8
0.6
V
GS
=10V
0.3
0
V
GS
=6V
1.0
2.0
5.0
3.0
4.0
Drain to Source Voltage, V
DS
(V)
0
45
60
15
30
Drain Current, I
D
(A)
75
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 5
Ver.A
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