Band Switching Diodes
MA26077
Silicon epitaxial planar type
For band switching
Features
0.60
±0.05
Unit: mm
Low forward dynamic resistance r
f
Less voltage dependence of diode capacitance C
D
3
2
Absolute Maximum Ratings
T
a
=
25
°C
Parameter
Reverse voltage
Forward current
Operating ambient temperature
Storage temperature
Symbol
V
R
I
F
T
opr
T
stg
Rating
35
100
–25
∼
+85
–55 to +125
Unit
V
mA
°C
°C
1
1.00
±0.05
0.39
+0.01
−0.03
0.15
±0.05
0.05
±0.03
0.35
±0.01
0.25
±0.05
0.50
±0.05
0.25
±0.05
1
3
0.65
±0.01
2
0.05
±0.03
1: Anode
2: N.C.
3: Cathode
ML3-N2 Package
Marking Symbol:
3L
Electrical Characteristics
T
a
=
25
°C±3°C
Parameter
Forward voltage
Reverse current
Diode capacitance
Forward dynamic resistance
*
2.
3.
4.
Symbol
V
F
I
R
C
D
r
f
I
F
=
100
mA
V
R
=
33
V
Conditions
Min
Typ
0.92
0.01
0.9
0.65
Max
1.0
100
1.2
0.85
Unit
V
nA
pF
Ω
V
R
=
6
V, f =
1
MHz
I
F
=
2
mV, f =
100
MHz
Note)
1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C
7031
measuring methods for diodes.
Maximum ambient temperature during operation.
Absolute frequency of input and output is
100
MHz
*: Measuring instrument: YHP
4191A
RF IMPEDANCE ANALYZER
Publication date: November
2004
SKG00017AED
1
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
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•
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•
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2003 SEP