voltage, low insertion loss, moderate isolation, small
size and low cost are required.
Typical applications are for filter and antenna
switching in wireless LAN systems that connect
separate receive functions to a common antenna, as
well as other handset and general purpose switching
applications.
The MASWSS0167 is fabricated using a 0.5 micron
gate length GaAs pHEMT process. The process
features full passivation for performance and
reliability.
RF2
39 pF
39 pF
V2
Pin Configuration
Pin No.
1
2
3
4
5
6
Pin Name
RF1
GND
RF2
V2
RFC
V1
Description
RF In/Out
RF Ground
RF In/Out
Control 2
RF Common
Control 1
Ordering Information
1,2
Part Number
MASWSS0167TR-3000
MASWSS0167SMB
Package
3000 piece reel
Sample Test Board
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive
to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control
techniques should be used when handling these
devices.
1. Reference Application Note M513 for reel size information.
2. All sample boards include 5 loose parts.
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MASWSS0167
2.5 V GaAs SPDT Switch
0.5 - 3.0 GHz
Electrical Specifications
3
: T
A
= 25°C, V
C
= 0 V / +2.5 V, Z
0
= 50 Ω
Parameter
Insertion Loss
4
Rev. V3
Test Conditions
1 GHz
2 GHz
3 GHz
1 GHz
2 GHz
3 GHz
0.5 - 3.0 GHz
2-Tone, +10 dBm/tone, 5 MHz Spacing, > 50 MHz
—
2.5 GHz, OFDM, QAM-64,54Mbps, EVM=2.5%
2.5 V
3.0 V
5.0 V
10% to 90% RF, 90% to 10% RF
50% control to 90% RF, and 50% control to 10% RF
In Band
|V
C
| = 2.5 V
Units
dB
Min.
—
Typ.
0.30
0.40
0.50
25
27
24
1.1
48
28
Max.
0.50
—
—
Isolation
VSWR
IP3
P1dB
dB
Ratio
dBm
dBm
23
—
—
—
—
—
—
—
—
—
Linear Pout
dBm
—
21.0
23.5
28.5
30
35
60
1
—
T
RISE
, T
FALL
T
ON
, T
OFF
Transients
Control Current
ns
ns
mV
µA
—
—
—
—
—
—
—
5
3. For positive voltage control, external DC blocking capacitors are required on all RF ports.
4. Insertion Loss can be optimized by varying the DC blocking capacitor value, e.g. 1000 pF for 100 MHz - 500 MHz, 39 pF for 0.5 - 3 GHz.
Absolute Maximum Ratings
5,6
Parameter
Input Power
(0.5 - 3 GHz, 2.5 V Control)
Operating Voltage
Operating Temperature
Storage Temperature
Absolute Maximum
+32 dBm
+8.5 volts
Truth Table
7
V1
0
1
V2
1
0
RFC - RF1
On
Off
RFC - RF2
Off
On
7. 0 = 0 ± 0.2 V, 1 = 2.5 to 5 V
-40°C to +85°C
-65°C to +150°C
5. Exceeding any one or combination of these limits may cause
permanent damage to this device.
6. M/A-COM Technology Solutions does not recommend
sustained operation near these survivability limits.
2
MASWSS0167
2.5 V GaAs SPDT Switch
0.5 - 3.0 GHz
Typical Performance Curves
Insertion Loss
0.8
+25°C
-40°C
+85°C
Rev. V3
Isolation
40
0.6
30
0.4
20
+25°C
-40°C
+85°C
0.2
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.5
1.0
1.5
2.0
2.5
3.0
Frequency (GHz)
Frequency (GHz)
Return Loss
0
EVM vs. Pout @ 2.5 GHz
10
EVM @ 2.5 V
EVM @ 3.0 V
EVM @ 5.0 V
10
+25°C
-40°C
+85°C
8
6
20
4
30
2
40
0.5
1.0
1.5
2.0
2.5
3.0
0
10
15
20
25
30
35
Frequency (GHz)
Pout (dBm)
3
MASWSS0167
2.5 V GaAs SPDT Switch
0.5 - 3.0 GHz
Lead-Free
1.2 x 1.5 mm 6-Lead PQFN
†
Rev. V3
†
Reference Application Note S2083 for lead-free solder reflow recommendations.
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