UMY4N / UMZ2N / FMY4A / IMZ2A
Transistors
Power management (dual transistors)
UMY4N / UMZ2N / FMY4A / IMZ2A
!
Features
1) Both a 2SA1037AK chip and 2SC2412K chip in a
UMT or SMT package.
!
External dimensions
(Units : mm)
(4)
(3)
UMY4N
0.2
0.65 0.65
0.65
0.8
0.7
0.8
0.7
0.65
(5)
1.25
!
Absolute maximum ratings (Ta = 25°C)
°
0.15
2.1
0.9
1.1
1.3
0.95 0.95
1.9
2.9
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power UMY4N, UMZ2N
dissipation
FMY4A, IMZ2A
Junction temperature
Storage temperature
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Tr
1
−60
−50
Tr
2
60
50
0.1Min.
V
V
V
mA
mW
°C
°C
ROHM : UMT5
EIAJ : SC-88A
0to0.1
Parameter
Symbol
Limits
Unit
Each lead has same dimensions
−6
7
−150
150
150 (TOTAL)
300 (TOTAL)
150
−55~+150
∗
1
∗
2
0.2
(4)
(3)
UMZ2N
∗
1 120mW per element must not be exceeded.
∗
2 200mW per element must not be exceeded.
(6)
(5)
1.25
2.1
0.15
0.1Min.
0to0.1
!
Package, marking, and packaging specifications
Part No.
Package
Marking
Code
Basic ordering unit (pieces)
UMY4N
UMT5
Y4
TR
3000
UMZ2N
UMT6
Z2
TR
3000
FMY4A
SMT5
Y4
T148
3000
IMZ2A
SMT6
Z2
T108
3000
ROHM : UMT6
EIAJ : SC-88
Each lead has same dimensions
FMY4A
0.95 0.95
1.9
0.3
(2)
(4)
(3)
(1)
!
Circuit diagrams
UMY4N
FMY4A
0.15
0.3to0.6
1.6
2.8
0to0.1
Tr
1
Tr
2
Tr
2
Tr
1
ROHM : SMT5
EIAJ : SC-74A
Each lead has same dimensions
UMZ2N
IMZ2A
Tr
2
Tr
1
Tr
2
Tr
1
IMZ2A
(6)
0.3
(4)
(5)
1.6
2.8
0.15
0.3to0.6
0to0.1
ROHM : SMT6
EIAJ : SC-74
Each lead has same dimensions
(3)
(2)
(1)
(5)
(1)
(2)
(1)
1.3
(2)
UMY4N / UMZ2N / FMY4A / IMZ2A
Transistors
!
Electrical characteristics
(Ta=25°C)
Tr
1
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
−60
−50
−6
−
−
−
120
−
−
Typ.
−
−
−
−
−
−
−
140
4
Max.
−
−
−
−0.1
−0.1
−0.5
560
−
5
Unit
V
V
V
µA
µA
V
−
MHz
pF
I
C
=
−50µA
I
C
=
−1mA
I
E
=
−50µA
V
CB
=
−60V
V
EB
=
−6V
I
C
/I
B
=
−50mA/−5mA
V
CE
=
−6V
, I
C
=
−1mA
V
CE
=
−12V
, I
E
= 2mA , f = 100MHz
V
CB
=
−12V
, I
E
= 0A , f = 1MHz
Conditions
∗
∗
Transition frequency of the device.
Tr
2
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
60
50
7
−
−
−
120
−
−
Typ.
−
−
−
−
−
−
−
180
2
Max.
−
−
−
0.1
0.1
0.4
560
−
3.5
Unit
V
V
V
µA
µA
V
−
MHz
pF
I
C
= 50µA
I
C
= 1mA
I
E
= 50µA
V
CB
= 60V
V
EB
= 7V
Conditions
I
C
/I
B
= 50mA/5mA
V
CE
= 6V , I
C
= 1mA
V
CE
= 12V , I
E
=
−2mA
, f = 100MHz
V
CB
= 12V , I
E
= 0A , f = 1MHz
∗
∗
Transition frequency of the device.
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