MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF577T1/D
The RF Small Signal Line
NPN Silicon
High-Frequency Transistor
Designed for low noise, wide dynamic range front end amplifiers at
frequencies to 1.5 GHz. Specifically aimed at portable communication devices
such as pagers and hand–held phones.
•
Low Noise Figure
NF = 1.5 dB (Typ) @ 1.0 GHz
•
High Current Gain–Bandwidth Product (f
τ
= 7.0 GHz Typ @ 6.0 V, 40 mA)
•
Small, Surface–Mount Package (SC–70/SOT–323)
•
Available in Tape and Reel Packaging.
T1 Suffix = 3,000 Units per 8 mm, 7 inch Reel.
MRF577T1
LOW NOISE
HIGH FREQUENCY
TRANSISTOR
CASE 419–02, STYLE 3
(SC–70/SOT–323)
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TC = 75°C (1)
Derate above 75°C
Storage Temperature Range
Operating Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
TJ
Value
10
20
3.0
80
232
3.1
– 55 to +150
150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction–to–Case (1)
Symbol
R
θJC
Value
323
Unit
°C/W
DEVICE MARKING
MRF577T1 = D
(1) Case temperature measured on the collector lead immediately adjacent to body of package.
MOTOROLA RF
©
Motorola, Inc. 1997
DEVICE DATA
MRF577T1
1
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 1.0 mA, IB = 0 mA)
Collector–Base Breakdown Voltage
(IC = 0.1 mA, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 50
µA,
IC = 0)
Collector Cutoff Current
(VCB = 8.0 Vdc, IE = 0)
ON CHARACTERISTICS
DC Current Gain
(VCE = 10 Vdc, IC = 30 mA)
DYNAMIC CHARACTERISTICS
Collector–Base Capacitance
(VCB = 6.0 Vdc, IE = 0, f = 1.0 MHz)
Current–Gain Bandwidth Product
(VCE = 6.0 Vdc, IE = 40 mA, f = 1.0 GHz)
PERFORMANCE CHARACTERISTICS
Noise Figure — Minimum
(VCE = 6.0 Vdc, IC = 5.0 mA) Figure 1
Associated Gain at Minimum Noise Figure
(VCE = 6.0 Vdc, IC = 5.0 mA) Figure 1
Maximum Unilateral Gain
(VCE = 6.0 Vdc, IC = 40 mA, f = 1000 MHz)
Insertion Gain
(VCE = 6.0 Vdc, IC = 40 mA, f = 1000 MHz)
Noise Resistance
(VCE = 6.0 Vdc, IC = 5.0 mA, f = 1000 MHz)
500 MHz
1.0 GHz
500 MHz
1.0 GHz
NFmin
GNF
GUmax
|S212|
RN
—
—
—
—
—
—
—
1.0
1.5
15
10
12
11
6.0
—
—
—
—
—
—
—
dB
dB
dB
dB
Ohms
Ccb
f
τ
—
—
0.85
7.0
—
—
pF
GHz
hFE
50
—
300
—
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
10
20
2.5
—
12
—
—
—
—
—
—
10
Vdc
Vdc
Vdc
µA
Symbol
Min
Typ
Max
Unit
VCE
VBE
DUT
RF OUTPUT
RF INPUT
*BIAS **SLUG TUNER
NETWORK
**SLUG TUNER
*BIAS
NETWORK
*HP11590B
**MICROLAB/FXR
**SF
– 11N < 1 GHz
**SF
– 31IN
≥
1 GHz
Figure 1. Functional Circuit Schematic
MRF577T1
2
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
C cb , COLLECTOR–BASE CAPACITANCE (pF)
8
f
τ
, GAIN BANDWIDTH PRODUCT (GHz)
7
6
5
4
3
2
1
0
1
2
3
5
20 30
10
IC, COLLECTOR CURRENT (mA)
50
100
VCE = 3 V
VCE = 6 V
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
1
2
3
4
5
6
7
8
VCB, COLLECTOR–BASE VOLTAGE (Vdc)
9
10
Figure 2. f
τ
, Current–Gain Bandwidth Product
versus Collector Current
PD(max), MAXIMUM POWER DISSIPATION (mW)
Figure 3. Collector–Base Capacitance
versus Voltage
4
3.5
C ib , INPUT CAPACITANCE (pF)
3
2.5
2
1.5
1
0.5
0
0
0.5
1
1.5
2
2.5
VEB, EMITTER–BASE VOLTAGE (Vdc)
3
300
250
200
150
100
50
0
0
25
50
75
100
125
TC, CASE TEMPERATURE (°C)
150
200
PD(max) = 232 mW
Figure 4. Input Capacitance versus
Emitter–Base Voltage
Figure 5. Maximum Power Dissipation versus
Collector Lead Temperature (TC)
35
35
30
GUmax , S 2 (dB)
21
25
20
15
10
5
0
0.1
|S21|2
GUmax
VCE = 3 V
IC = 20 mA
GUmax , S 2 (dB)
21
30
GUmax
25
20
15
10
5
0
0.1
|S21|2
VCE = 6 V
IC = 40 mA
0.3
0.5
2
1
f, FREQUENCY (GHz)
3
5
10
0.3
2
0.5
1
f, FREQUENCY (GHz)
3
5
10
Figure 6. Forward Insertion Gain and
Maximum Unilateral Gain versus Frequency
Figure 7. Forward Insertion Gain and
Maximum Unilateral Gain versus Frequency
MOTOROLA RF DEVICE DATA
MRF577T1
3
TYPICAL CHARACTERISTICS
4
NFmin , MINIMUM NOISE FIGURE (dB)
3.5
3
2.5
2
1.5
1
0.5
0
0.1
0.3
1
0.5
2
f, FREQUENCY (GHz)
3
NFmin
GNF
VCE = 3 V
IC = 5 mA
20
NFmin , MINIMUM NOISE FIGURE (dB)
18
G NF , ASSOCIATED GAIN (dB)
16
14
12
10
8
6
10
4
3.5
3
2.5
2
1.5
1
0.5
0
0.1
0.3
1
0.5
2
f, FREQUENCY (GHz)
3
NFmin
GNF
VCE = 6 V
IC = 10 mA
20
18
16
14
12
10
8
6
10
G NF , ASSOCIATED GAIN (dB)
Figure 8. Minimum Noise Figure and
Associated Gain versus Frequency
Figure 9. Minimum Noise Figure and
Associated Gain versus Frequency
40
35
6V
OUTPUT IP3 (dBm)
30
3V
25
20
15
10
10
Zsource = 50
Ω
Zload = Opt IP3
20
30
50
40
IC, COLLECTOR CURRENT (mA)
60
Figure 10. Output Third Order Intercept Point
versus Collector Current
MRF577T1
4
MOTOROLA RF DEVICE DATA
VCE
(Volts)
3.0
IC
(mA)
3.0
f
(MHz)
300
500
900
1000
1500
2000
300
500
900
1000
1500
2000
300
500
900
1000
1500
2000
300
500
900
1000
1500
2000
300
500
900
1000
1500
2000
NFmin
(dB)
0.81
1.05
1.51
1.62
2.11
2.55
0.86
1.03
1.40
1.50
1.89
2.29
0.81
1.07
1.56
1.70
2.23
2.72
0.85
1.04
1.42
1.52
2.00
2.43
1.02
1.15
1.42
1.50
1.85
2.25
|Γo|
0.44
0.43
0.46
0.47
0.56
0.69
0.33
0.34
0.40
0.42
0.52
0.65
0.45
0.44
0.44
0.45
0.53
0.67
0.37
0.37
0.39
0.40
0.50
0.65
0.24
0.26
0.33
0.35
0.47
0.61
∠ Γ
o
–
57
–
88
–
138
–
149
– 173
– 157
–
58
–
88
–
139
–
149
– 173
– 157
–
50
–
81
–
132
–
142
– 177
– 158
–
50
–
80
–
130
–
141
– 179
– 159
–
52
–
82
–
131
–
142
– 179
– 159
RN
10
9
6
6
4
6
8
8
6
5
4
6
11
11
8
7
5
6
10
9
7
6
5
6
9
9
7
6
5
5
5.0
6.0
3.0
5.0
10
Table 1. MRF577T1 Common Emitter Noise Parameters
MOTOROLA RF DEVICE DATA
MRF577T1
5
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