Bulletin PD-21034 rev. A 07/06
32CTQ030SPbF
32CTQ030-1PbF
SCHOTTKY RECTIFIER
32 Amp
I
F(AV)
= 30Amp
V
R
= 30V
Major Ratings and Characteristics
Characteristics
I
F(AV)
Rectangular
waveform
V
RRM
I
FSM
@ tp = 5
μs
sine
V
F
T
J
@ 15 Apk, T
J
= 125°C
range
30
900
0.40
- 55 to 150
V
A
V
°C
Description/ Features
Units
A
The 32CTQ030.. Schottky rectifier series has been opti-
mized for low reverse leakage at high temperature. The
proprietary barrier technology allows for reliable operation up
to 150° C junction temperature. Typical applications are in
switching power supplies, converters, free-wheeling diodes,
and reverse battery protection.
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Lead-Free ("PbF" suffix)
150° C T
J
operation
Values
30
Case Styles
32CTQ030SPbF
32CTQ030-1PbF
Base
Common
Cathode
2
Base
Common
Cathode
2
1
Anode
2
Common
Cathode
3
1
Anode
Anode
2
Common
Cathode
3
Anode
D
2
PAK
www.irf.com
TO-262
1
32CTQ030SPbF, 32CTQ030-1PbF
Bulletin PD-21034 rev. A
07/06
Voltage Ratings
Part number
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
32CTQ030SPbF, 32CTQ030-1PbF
30
Absolute Maximum Ratings
Parameters
I
F(AV)
Max. Average Forward Current
* See Fig. 5
I
FSM
E
AS
I
AR
Max. Peak One Cycle Non-Repetitive
Surge Current * See Fig. 7
Non-Repetitive Avalanche Energy
Repetitive Avalanche Current
32CTQ Units Conditions
30
900
250
13
3
A
50% duty cycle @ T
C
= 115° C, rectangular wave form
5μs Sine or 3μs Rect. pulse
10ms Sine or 6ms Rect. pulse
Following any rated
load condition and
with rated V
RRM
applied
A
mJ
A
T
J
= 25 °C, I
AS
= 1.20 Amps, L = 11.10 mH
Current decaying linearly to zero in 1
μsec
Frequency limited by T
J
max. V
A
= 1.5 x V
R
typical
Electrical Specifications
Parameters
V
FM
Max. Forward Voltage Drop
* See Fig. 1
(1)
32CTQ Units Conditions
0.49
0.58
0.40
0.53
V
V
V
V
mA
mA
V
mΩ
pF
nH
V/
μs
V
R
= 5V
DC
(test signal range 100Khz to 1Mhz) 25 °C
Measured lead to lead 5mm from package body
(Rated V
R
)
(1) Pulse Width < 300μs, Duty Cycle < 2%
@ 15A
@ 30A
@ 15A
@ 30A
T
J
= 25 °C
T
J
= 125 °C
T
J
= T
J
max.
T
J
= 25 °C
T
J
= 125 °C
V
R
= rated V
R
I
RM
Max. Reverse Leakage Current (1)
* See Fig. 2
1.75
97
0.233
9.09
1300
8.0
10000
V
F(TO)
Threshold Voltage
r
t
C
T
L
S
Forward Slope Resistance
Max. Junction Capacitance Per Leg
Typical Series Inductance
Per Leg
dv/dt Max. Voltage Rate of Change
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Junction Temperature Range
Max. Storage Temperature Range
32CTQ Units Conditions
- 55 to 150
- 55 to 150
3.25
0.50
2 (0.07)
Min.
Max.
6 (5)
12 (10)
°C
°C
°C/W
°C/W
g (oz.)
Kg-cm
(Ibf-in)
Case style D
2
Pak
Case style TO-262
DC operation
* See Fig. 4
R
thJC
Max. Thermal Resistance Junction
to Case
Per Leg
R
thCS
Typical Thermal Resistance,
Case to Heatsink
wt
T
Approximate Weight
Mounting Torque
Marking Device
Mounting surface , smooth and greased
32CTQ030S
32CTQ030-1
2
www.irf.com
32CTQ030SPbF, 32CTQ030-1PbF
Bulletin PD-21034 rev. A
07/06
1000
1000
100
10
1
0.1
0.01
0.001
T
J
= 150°C
125°C
100°C
75°C
50°C
25°C
Ins
tantaneous Forward Current - I
F
(A)
100
Reverse Current - I
R
(mA)
0
5
10
15
20
25
30
Reverse Voltage - V
R
(V)
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
10000
Junction Capacitance - C
T
(pF)
10
T
J
= 150°C
T
J
= 125°C
T
J
= 25°C
T
J
= 25°C
1000
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
100
0
5
10
15
20
25
30
35
Reverse Voltage - V
R
(V)
Forward Voltage Drop - V
FM
(V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
10
T
hermal Impedanc e Z
thJC
(°C/W)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
1
P
DM
0.1
t1
0.01
S
ingle Pulse
(T
hermal Resistanc e)
Notes:
t2
1. Duty factor D = t 1 / t 2
2. Peak T = P x Z
thJC
+ T
C
J
DM
0.01
0.1
1
10
0.001
0.00001
0.0001
0.001
t 1 , Rec tangular Pulse Dura tion (S onds)
ec
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
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3
32CTQ030SPbF, 32CTQ030-1PbF
Bulletin PD-21034 rev. A
07/06
160
Allowable Case T
emperature - (°C)
Average Power Loss - (Watts)
10
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMSLimit
DC
150
140
130
120
110
100
90
see note (2)
S uare wa ve (D = 0.50)
q
80% Rated V
R
a pplied
8
DC
6
4
2
80
0
5
10
15
20
25
Average Forward Current - I
F(AV)
(A)
0
0
5
10
15
20
25
Average Forward Current - I
F(AV)
(A)
Fig. 5 - Maximum Allowable Case Temperature
Vs. Average Forward Current
Non-Repetitive S
urge Current - I
FS
(A)
M
1000
Fig. 6 - Forward Power Loss Characteristics
At Any R
ated Load Condition
And With Rated V
RRM
Applied
F
ollowing S
urge
100
10
100
1000
10000
S
quare Wave Pulse Duration - t p (microsec)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
HIGH-S
PEED
S CH
WIT
F
REE-WHEEL
DIODE
40HF 40S
L 02
+
DUT
IR P460
F
R = 25 ohm
g
Vd = 25 Volt
CURRENT
MONIT
OR
Fig. 8 - Unclamped Inductive Test Circuit
(2)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss = I
F(AV)
x V
FM
@ (I
F(AV)
/
D) (see Fig. 6);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D); I
R
@ V
R1
= 80% rated V
R
4
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32CTQ030SPbF, 32CTQ030-1PbF
Bulletin PD-21034 rev. A
07/06
Outlines Table
Conform to JEDEC outline D
2
Pak (SMD-220)
Dimensions in millimeters and (inches)
Modified JEDEC outline TO-262
Dimensions in millimeters and (inches)
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5
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