DATA SHEET
NPN SILICON GERMANIUM RF TRANSISTOR
2SC5761
NPN SiGe RF TRANSISTOR FOR
LOW NOISE
⋅
HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
FEATURES
• Ideal for low noise
⋅
high-gain amplification
NF = 0.9 dB TYP. @ V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz
• Maximum stable power gain: MSG = 20.0 dB TYP. @ V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
• SiGe technology (f
T
= 60 GHz, f
max
= 60 GHz)
• Flat-lead 4-pin thin-type super minimold (M04) package
ORDERING INFORMATION
Part Number
2SC5761
2SC5761-T2
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
2
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
8.0
2.3
1.2
35
80
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
T
j
T
stg
Note
Mounted on 1.08 cm
×
1.0 mm (t) glass epoxy substrate
THERMAL RESISTANCE
Parameter
Junction to Case Resistance
Symbol
R
th (j-c)
Value
150
Unit
°C/W
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10212EJ02V0DS (2nd edition)
Date Published May 2003 CP(K)
Printed in Japan
The mark
!
shows major revised points.
NEC Compound Semiconductor Devices 2001, 2003
2SC5761
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
Maximum Stable Power Gain
Gain 1 dB Compression Output Power
3rd Order Intermodulation Distortion
Output Intercept Point
S
21e
NF
C
re
Note 2
2
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
I
CBO
I
EBO
h
FE
Note 1
V
CB
= 5 V, I
E
= 0 mA
V
BE
= 0.5 V, I
C
= 0 mA
V
CE
= 2 V, I
C
= 5 mA
−
−
200
−
−
−
200
200
400
nA
nA
−
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz,
Z
S
= Z
opt
V
CB
= 2 V, I
E
= 0 mA, f = 1 MHz
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
16.0
−
−
18.0
−
−
18.0
0.9
0.17
20.0
12.0
22.0
−
1.1
0.22
−
−
−
dB
dB
pF
dB
dBm
dBm
MSG
Note 3
P
O (1 dB)
OIP
3
Notes 1.
Pulse measurement: PW
≤
350
µ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance when the emitter grounded
3.
MSG =
S
21
S
12
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
FB
T16
200 to 400
2
Data Sheet PU10212EJ02V0DS
2SC5761
TYPICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Total Power Dissipation P
tot
(mW)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Reverse Transfer Capacitance C
re
(pF)
300
250
200
150
100
80
50
Mounted on Glass Epoxy Board
(1.08 cm
2
×
1.0 mm (t) )
0.4
f = 1 MHz
0.3
0.2
0.1
0
25
50
75
100
125
150
0
2
4
6
8
10
Ambient Temperature T
A
(˚C)
Collector to Base Voltage V
CB
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.1
0.01
0.001
V
CE
= 2 V
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
40
35
30
25
20
15
10
5
190
µ
A
160
µ
A
130
µ
A
100
µ
A
70
µ
A
40
µ
A
I
B
= 10
µ
A
1
2
3
Collector Current I
C
(mA)
0.0001
0.0
0.2
0.4
0.6
0.8
1.0
0
Base to Emitter Voltage V
BE
(V)
Collector to Emitter Voltage V
CE
(V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
V
CE
= 1 V
1 000
DC CURRENT GAIN vs.
COLLECTOR CURRENT
V
CE
= 2 V
DC Current Gain h
FE
100
DC Current Gain h
FE
100
10
0.1
1
10
100
10
0.1
1
10
100
Collector Current I
C
(mA)
Collector Current I
C
(mA)
Data Sheet PU10212EJ02V0DS
3
2SC5761
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
40
Gain Bandwidth Product f
T
(GHz)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
40
Gain Bandwidth Product f
T
(GHz)
35
30
25
20
15
10
5
0
1
V
CE
= 1 V
f = 2 GHz
35
30
25
20
15
10
5
0
1
V
CE
= 2 V
f = 2 GHz
10
Collector Current I
C
(mA)
100
10
Collector Current I
C
(mA)
100
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
35
30
25
20
15
10
5
0
0.1
1
Frequency f (GHz)
|S
21e
|
2
MSG
V
CE
= 0.5 V
I
C
= 20 mA
35
30
25
20
15
10
5
0
0.1
1
Frequency f (GHz)
|S
21e
|
2
MSG
V
CE
= 1 V
I
C
= 20 mA
MAG
MAG
10
10
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
35
30
25
20
15
10
5
0
0.1
1
Frequency f (GHz)
|S
21e
|
2
MSG
V
CE
= 2 V
I
C
= 20 mA
MAG
10
4
Data Sheet PU10212EJ02V0DS
2SC5761
INSERTION POWER GAIN, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Stable Power Gain MSG (dB)
30
25
20
15
10
5
0
1
V
CE
= 2 V
f = 1 GHz
30
25
20
15
10
5
0
1
MSG
|S
21e
|
2
V
CE
= 2 V
f = 2 GHz
MSG
|S
21e
|
2
10
Collector Current I
C
(mA)
100
10
Collector Current I
C
(mA)
100
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
30
25
20
15
V
CE
= 2 V
f = 5 GHz
MAG
10
|S
21e
|
2
5
0
1
10
Collector Current I
C
(mA)
100
Data Sheet PU10212EJ02V0DS
5
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