EMF23/UMF23N
Transistors
Power management (dual transistors)
EMF23/UMF23N
2SA1774and DTC114E are housed independently in a EMT6 or UMT6 package.
Application
Power management circuit
External dimensions
(Units : mm)
EMF23
0.22
(4)
(5)
(6)
(3)
(2)
Features
1) Power switching circuit in a single package.
2) Mounting cost and area can be cut in half.
ROHM : EMT6
1.2
1.6
(1)
0.13
Each lead has same dimensions
Abbreviated symbol : F23
(4)
(3)
0.65
1.3
0.65
0.7
0.9
Structure
Silicon epitaxial planar transistor
UMF23N
0.2
2.0
(5)
(2)
(6)
Equivalent circuits
1.25
2.1
(3)
(2)
(1)
0.15
DTr2
R
2
(4)
R
1
Tr1
ROHM : UMT6
EIAJ : SC-88
0∼0.1
0.1Min.
(1)
Each lead has same dimensions
Abbreviated symbol :F23
(5)
R
1
=10kΩ
R
2
=10kΩ
(6)
Package, marking, and packaging specifications
Type
Package
Marking
Code
Basic ordering unit(pieces)
EMF23
EMT6
F23
T2R
8000
UMF23N
UMT6
F23
TR
3000
0.5
0.5 0.5
1.0
1.6
1/4
EMF23/UMF23N
Transistors
Absolute maximum ratings
(Ta=25°C)
Tr1
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
−60
−50
−6
−150
150 (TOTAL)
150
−55
to
+150
Unit
V
V
V
mA
mW
C
C
∗
∗
120mW per element must not be exceeded.
DTr2
Parameter
Supply voltage
Input voltage
Collector current
Output current
Power dissipation
Junction temperature
Range of storage temperature
Limits
Symbol
50
V
CC
V
IN
−10~+40
100
I
C
50
I
O
150(TOTAL)
P
C
Tj
150
Tstg
−55
to
+150
Unit
V
V
mA
mA
mW
C
C
∗1
∗2
∗1
Characteristics of built-in transistor.
∗2
120mW per element must not be exceeded.
Each terminal mounted on a recommended land.
Electrical characteristics
(Ta=25°C)
Tr1
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol Min. Typ. Max. Unit
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE (sat)
h
FE
f
T
Cob
−60
−50
−6
−
−
−
180
−
−
−
−
−
−
−
−
−
140
4
−
−
−
−0.1
−0.1
−0.5
390
−
5
V
V
V
µA
µA
V
−
I
C
=−50µA
I
C
=−1mA
I
E
=−50µA
V
CB
=−60V
V
EB
=−6V
I
C
/I
B
=−50mA/−5mA
V
CE
=−6V,
I
C
=−1mA
Conditions
MHz V
CE
=−12V,
I
E
=2mA,
f=100MHz
pF
V
CB
=−12V,
I
E
=0A,
f=1MHz
DTr2
Parameter
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2
/R
1
f
T
Min.
−
3
−
−
−
30
7
0.8
−
Typ.
−
−
0.1
−
−
−
10
1
250
Max.
0.5
−
0.3
0.88
0.5
−
13
1.2
−
V
V
mA
µA
−
kΩ
−
MHz
Unit
Conditions
V
CC
=5V,
I
O
=100µA
V
O
=0.3V,
I
O
=10mA
I
O
/I
I
=10mA/0.5mA
V
I
=5V
V
CC
=50V,
V
I
=0V
V
O
=5V,
I
O
=5mA
−
−
V
CE
=10V,
I
E
=−5mA,
f=100MHz
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
∗
Transition frequency of the device
∗
2/4
EMF23/UMF23N
Transistors
Electrical characteristic curves
Tr1
-50
COLLECTOR CURRENT : Ic
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Ta = 100°C
25°C
-20
−
40°C
-10
-5
-2
-1
-0.5
-0.2
-0.1
V
CE
=
−6V
-10
-35.0
Ta = 25°C
-31.5
-28.0
-24.5
-100
Ta = 25°C
-500
-450
-400
-350
-300
-8
-80
-6
-21.0
-17.5
-60
-250
-200
-4
-14.0
-10.5
-40
-150
-100
-2
-7.0
-3.5µA
I
B
= 0
-20
-50µA
I
B
= 0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
0
-0.4
-0.8
-1.2
-1.6
-2.0
0
-1
-2
-3
-4
-5
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.1 Grounded emitter propagation
characteristics
Fig.2 Grounded emitter output
characteristics (
Ι
)
Fig.3 Grounded emitter output
characteristics (
ΙΙ
)
500
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
500
Ta = 25°C
V
CE
= -5V
-3V
-1V
DC CURRENT GAIN : h
FE
200
Ta = 100°C
25°C
-40°C
-1
Ta = 25°C
DC CURRENT GAIN : h
FE
-0.5
200
100
-0.2
100
I
C
/I
B
= 50
-0.1
20
10
50
50
-0.05
V
CE
= -6V
-0.2
-0.5
-1
-2
-5
-10 -20
-50 -100
-0.2
-0.5
-1
-2
-5
-10 -20
-50 -100
-0.2
-0.5
-1
-2
-5
-10
-20
-50 -100
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs. collector
current (
Ι
)
Fig.5 DC current gain vs. collector
current (
ΙΙ
)
Fig.6 Collector-emitter saturation
voltage vs. collector current (
Ι
)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
-1
1000
COLLECTOR OUTPUT CAPACITANCE : Cob (
pF)
EMITTER INPUT CAPACITANCE
: Cib (
pF)
TRANSITION FREQUENCY : f
T
(MHz)
l
C
/l
B
= 10
Ta = 25
°C
V
CE
= -12V
20
Cib
10
-0.5
500
Ta = 25
°C
f
=
1MHz
I
E
= 0A
I
C
= 0A
Co
b
-0.2
200
5
-0.1
Ta = 100°C
25°C
-40°C
100
2
-0.05
50
0.5
1
2
5
10
20
50
100
-0.2
-0.5
-1
-2
-5
-10
-20
-50 -100
-0.5
-1
-2
-5
-10
-20
COLLECTOR CURRENT : I
C
(mA)
EMITTER CURRENT : I
E
(mA)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE
: V
EB
(V)
Fig.7 Collector-emitter saturation
voltage vs. collector current (
ΙΙ
)
Fig.8 Gain bandwidth product vs.
emitter current
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
3/4
EMF23/UMF23N
Transistors
DTr2
100
50
OUTPUT CURRENT : Io
(A)
V
O
=0.3V
10m
5m
2m
1m
500µ
200µ
100µ
50µ
20µ
10µ
5µ
2µ
1µ
0
Ta=100°C
25°C
−40°C
V
CC
=5V
1k
500
DC CURRENT GAIN : G
I
V
O
=5V
Ta=100°C
25°C
−40°C
INPUT VOLTAGE : V
I(on)
(V)
20
10
5
2
1
500m
200m
100m
100µ 200µ
500µ 1m
2m
5m 10m 20m 50m 100m
Ta=−40°C
25°C
100°C
200
100
50
20
10
5
2
0.5
1.0
1.5
2.0
2.5
3.0
1
100µ 200µ 500µ1m 2m
5m 10m 20m 50m100m
OUTPUT CURRENT : I
O
(A)
INPUT VOLTAGE : V
I(off)
(V)
OUTPUT CURRENT : I
O
(A)
Fig.1 Input voltage vs. output current
(ON characteristics)
Fig.2 Output current vs. input voltage
(OFF characteristics)
Fig.3 DC current gain vs. output
current
1
500m
OUTPUT VOLTAGE : V
O(on)
(V)
l
O
/l
I
=20
Ta=100°C
25°C
−40°C
200m
100m
50m
20m
10m
5m
2m
1m
100µ 200µ
500µ 1m
2m
5m 10m 20m 50m 100m
OUTPUT CURRENT : I
O
(A)
Fig.4 Output voltage vs. output
current
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0
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