REVISIONS
LTR
A
DESCRIPTION
Add case outline 2 to device type 01. Update document. Editorial changes
throughout.
Delete vendor CAGE 64155. Change boilerplate to add one-part numbers.
B
C
D
E
Add delta test limit table. Make changes to I
IO
, I
IB
, and A
VO
tests as specified
under table I.
Add radiation hardened assurance requirements. - ro
Replaced reference to MIL-STD-973 with reference to MIL-PRF-38535.
Drawing updated to reflect current requirements. - gt
Add a new footnote under paragraph 1.5 and Table I. - ro
96-12-31
99-02-16
04-08-06
05-08-10
R. MONNIN
R. MONNIN
R. MONNIN
R. MONNIN
DATE (YR-MO-DA)
89-09-13
APPROVED
M. A. FRYE
THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED.
REV
SHEET
REV
SHEET
REV STATUS
OF SHEETS
PMIC N/A
REV
SHEET
E
1
E
2
E
3
E
4
E
5
E
6
E
7
E
8
E
9
E
10
E
11
E
12
PREPARED BY
JOSEPH A. KERBY
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
CHECKED BY
RAYMOND MONNIN
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
http://www.dscc.dla.mil
APPROVED BY
MICHAEL A. FRYE
DRAWING APPROVAL DATE
88-10-07
MICROCIRCUIT, LINEAR, DUAL PRECISION
JFET-INPUT OPERATIONAL AMPLIFIERS,
MONOLITHIC SILICON
AMSC N/A
REVISION LEVEL
E
SIZE
A
SHEET
CAGE CODE
67268
1 OF
12
5962-88538
DSCC FORM 2233
APR 97
5962-E643-05
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)
and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or
Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
1.2 PIN. The PIN is as shown in the following examples.
For device classes M and Q:
5962
-
88538
01
G
X
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
/
Device
type
(see 1.2.2)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
\/
Drawing number
For device class V:
5962
-
88538
01
V
G
X
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
/
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
\/
Drawing number
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are
marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A
specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
01
02
03
Generic number
OP215A
OP215B
OP215B
Circuit function
Dual, precision JFET – input operational amplifier
Dual, precision JFET – input operational amplifier
Dual, precision JFET – input operational amplifier
with balance adjust
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as listed
below. Since the device class designator has been added after the original issuance of this drawing, device classes M and Q
designators will not be included in the PIN and will not be marked on the device.
Device class
M
Device requirements documentation
Vendor self-certification to the requirements for MIL-STD-883 compliant, non-
JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A
Certification and qualification to MIL-PRF-38535
Q or V
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-88538
SHEET
E
2
1.2.4 Case outlines. The case outlines are as designated in MIL-STD-1835 and as follows:
Outline letter
G
P
2
Descriptive designator
MACY1-X8
GDIP1-T8 or CDIP2-T8
CQCC1-N20
Terminals
8
8
20
Package style
Can
Dual-in-line
Square leadless chip carrier
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,
appendix A for device class M.
1.3 Absolute maximum ratings. 1/
Supply voltage (V
S
) .........................................................................................
Differential input voltage ..................................................................................
Input voltage (V
IN
) ..........................................................................................
Output short-circuit duration ............................................................................
Internal power dissipation (P
D
) .......................................................................
Junction temperature (T
J
) ...............................................................................
Storage temperature range ..............................................................................
Lead temperature (soldering, 60 seconds) ......................................................
Thermal resistance, junction-to-case (
θ
JC
) .....................................................
1.4 Recommended operating conditions.
Supply voltage (V
S
) .........................................................................................
±15
V
Ambient operating temperature (T
A
) ............................................................... -55°C to +125°C
1.5 Radiation features. 4/
Neutron (20 ns pulse) ...................................................................................... 5/
Maximum Total dose available (dose rate = 50 - 300 rad (Si)/s) ..................... 100 Krads (Si)
Dose rate latch-up ........................................................................................... 5/
±22V
±40
V
±20
V 2/
Indefinite
500 mW 3/
+150°C
-65°C to +150°C
+300°C
See MIL-STD-1835
1/
2/
3/
Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
Unless otherwise specified, the absolute maximum negative input voltage is equal to the negative power supply
voltage.
For case G at T
A
> 80°C, derate linearly at 7.1 mW/°C. For case P at T
A
> 75°C, derate linearly at 6.7 mW/°C.
For case 2 at T
A
> 80°C, derate linearly at 7.5 mW/°C.
These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate
effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in
MIL-STD-883, method 1019, condition A.
This test is to be conducted only when specified in the purchase order or contract.
4/
5/
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-88538
SHEET
E
3
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 -
MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 -
MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Copies of these documents are available online at
http://assist.daps.dla.mil/quicksearch/
or
http://assist.daps.dla.mil
or from
the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of
this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for
device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified
herein.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in
MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.
3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.
3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be as specified on figure 2.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full
ambient operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical
tests for each subgroup are defined in table I.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer
has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be
marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be
in accordance with MIL-PRF-38535, appendix A.
3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in
MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.
SIZE
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
A
REVISION LEVEL
5962-88538
SHEET
E
4
TABLE I. Electrical performance characteristics.
Conditions 1/ 2/
-55°C
≤
T
A
≤
+125°C
V
S
=
±15
V
unless otherwise specified
Test
Symbol
Group A
subgroups
Device
type
Limits
Unit
Min
Input offset voltage
V
IO
R
S
= 50
Ω
1
01
02,03
2,3
01
02,03
M,D,P,L,R
Input offset current
I
IO
T
J
= +25°C, -55°C,
V
CM
= 0 V
T
J
= +125°C,
V
CM
= 0 V
M,D,P,L,R, V
CM
= 0 V
Input bias current
I
IB
T
J
= +25°C, -55°C,
V
CM
= 0 V
T
J
= +125°C,
V
CM
= 0 V
M,D,P,L,R, V
CM
= 0 V
Large signal voltage gain
A
VO
V
O
=
±10
V, R
L
≥
2 kΩ
1
4
01
01
02,03
5,6
M,D,P,L,R
V
O
=
±10
V, R
L
= 2 kΩ
Output voltage swing 4/
V
O
R
L
≥
2 kΩ
R
L
≥
10 kΩ
Supply current
I
S
V
O
= 0 V, T
A
= +25°C
M,D,P,L,R, V
O
= 0 V
See footnotes at end of table.
4
4
5,6
1
1
All
01
01
All
10
±11
±12
All
150
750
30
2
1
1,3 3/
01
01
02,03
All
2
1
1,3 3/
01
All
Max
±1.0
±2.0
±2.0
±3.0
±3.0
±50.0
pA
mV
±8.0
±300
±100
±200
±10
±6
nA
pA
pA
nA
V/mV
V
8.5
8.5
mA
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-88538
SHEET
E
5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
