EMI8131, EMI8132,
EMI8133
Common Mode Filter with
ESD Protection
Functional Description
The EMI813x is a family of Common Mode Filters (CMF) with
integrated ESD protection, a first in the industry. Differential signaling
I/Os can now have both common mode filtering and ESD protection in
one package. The EMI813x protects against ESD pulses up to
±15
kV
contact per the IEC61000−4−2 standard.
The EMI813x is well−suited for protecting systems using
high−speed differential ports such as MIPI D−PHY; corresponding
ports in removable storage, and other applications where ESD
protection are required in a small footprint package.
The EMI813x is available in a RoHS−compliant, XDFN−10 for 2
Differential Pair and XDFN−16 package for 3 Differential Pair.
Features
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XDFN6
CASE 711AV
XDFN10
CASE 711AU
XDFN16
CASE 711AW
MARKING DIAGRAMS
MA M
G
1
M2 M
G
1
1
XX = Specific Device Code
M = Date Code
G
= Pb−Free Package
M3 M
G
•
•
•
•
•
•
Total Insertion Loss DM
LOSS
< 3.7 dB at 2.5 GHz
Large Differential Mode Cutoff Frequency f
3dB
> 2.5 GHz
High Common Mode Stop Band Attenuation
Low Channel Resistance 6.0
W
Provides ESD Protection to IEC61000−4−2 Level 4,
±15
kV Contact
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
ELECTRICAL SCHEMATICS
EMI8132
•
•
•
•
•
•
USB 3.0
MHL 2.0
mSD
Card
eSATA
HDMI/DVI Display in Mobile Phones
MIPI D−PHY (CSI−2, DSI, etc) in Mobile Phones and Digital Still
Cameras
EMI8133
ORDERING INFORMATION
Device
EMI8131MUTAG
EMI8132MUTAG
Package
XDFN6
Shipping
†
3000 / Tape & Reel
XDFN10 3000 / Tape & Reel
Figure 1. EMI8131 Electrical Schematic
EMI8133MUTAG,
XDFN16 3000 / Tape & Reel
SZEMI8133MUTAG
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2014
1
January, 2018 − Rev. 1
Publication Order Number:
EMI8132/D
EMI8131, EMI8132, EMI8133
PIN FUNCTION DESCRIPTION
Device Pin
Pin Name
In_1+
In_1−
Out_1+
Out_1−
In_2+
In_2−
Out_2+
Out_2−
In_3+
In_3−
Out_3+
Out_3−
V
N
EMI8131
1
2
6
5
NA
NA
NA
NA
NA
NA
NA
NA
3,4
EMI8132
1
2
10
9
4
5
7
6
NA
NA
NA
NA
3, 8
EMI8133
1
2
16
15
4
5
13
12
7
8
10
9
3,6,14,11
Type
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
GND
Description
CMF Channel 1+ to Connector (External)
CMF Channel 1− to Connector (External)
CMF Channel 1+ to ASIC (Internal)
CMF Channel 1− to ASIC (Internal)
CMF Channel 2+ to Connector (External)
CMF Channel 2− to Connector (External)
CMF Channel 2+ to ASIC (Internal)
CMF Channel 2− to ASIC (Internal)
CMF Channel 3+ to Connector (External)
CMF Channel 3− to Connector (External)
CMF Channel 3+ to ASIC (Internal)
CMF Channel 3− to ASIC (Internal)
Ground
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Parameter
Operating Temperature Range
Storage Temperature Range
Maximum Lead Temperature for Soldering Purposes
(1/8” from Case for 10 seconds)
DC Current per Line
Symbol
T
OP
T
STG
T
L
I
LINE
Value
−40 to +85
−65 to +150
260
100
Unit
°C
°C
°C
mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
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2
EMI8131, EMI8132, EMI8133
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
V
RWM
V
BR
I
LEAK
R
CH
Parameter
Reverse Working Voltage
Breakdown Voltage
Channel Leakage Current
Channel Resistance
(Pins 1−6, 2−5) − EMI8131
(Pins 1−10, 2−9, 4−7 and 5−6) − EMI8132
(Pins 1−16, 2−15, 4−13, 5−12, 7−10 and 8−9) − EMI8133
@ 2.5 GHz
50
W
Source and Load
Termination
@ 750 MHz
(Notes 1 and 2)
±15
±2
Forward I
PP
= 8 A
Forward I
PP
= 16 A
Forward I
PP
= −8 A
Forward I
PP
= −16 A
8.94
13.4
−3.96
−7.62
V
Test Conditions
(Note 3)
I
T
= 1 mA; (Note 4)
T
A
= 25°C, V
IN
= 3.3 V, GND = 0 V
6.0
4.0
Min
Typ
3.3
9.0
1.0
Max
Unit
V
V
mA
W
DM
LOSS
Differential Mode Insertion Loss
f
3dB
F
atten
V
ESD
Differential Mode Cut-off Frequency
Common Mode Stop Band Attenuation
In-system ESD Withstand Voltage
a) Contact discharge per IEC 61000-4-2 standard, Level 4
(External Pins)
b) Contact discharge per IEC 61000-4-2 standard, Level 1
(Internal Pins)
TLP Clamping Voltage
3.7
2.5
30
dB
GHz
dB
kV
V
CL
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Standard IEC61000−4−2 with C
Discharge
= 150 pF, R
Discharge
= 330, GND grounded.
2. These measurements performed with no external capacitor.
3. TVS devices are normally selected according to the working peak reverse voltage (V
RWM
), which should be equal to or greater than the DC
or continuous peak operating voltage level.
4. V
BR
is measured at pulse test current I
T
.
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3
EMI8131, EMI8132, EMI8133
TYPICAL CHARACTERISTICS
0
−1
−2
dB (SDD21)
dB (SCC21)
1.E+06
1.E+07
1.E+08
1.E+09
−3
−4
−5
−6
−7
1.E+05
0
−5
−10
−15
−20
−25
−30
−35
−40
−45
−50
1.E+05
1.E+06
1.E+07
1.E+08
1.E+09
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 2. Typical Differential Mode Attenuation
vs. Frequency
Figure 3. Typical Common Mode Attenuation
vs. Frequency
Interface
MIPI
Data Rate (Gb/s)
1.5
Fundamental Frequency (MHz)
750
ESD813x Differential Insertion Loss (dB)
m1 = 1.25
Figure 4. Differential Mode Insertion Loss
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4
EMI8131, EMI8132, EMI8133
TRANSMISSION LINE PULSE (TLP) MEASUREMENTS
Transmission Line Pulse (TLP) provides current versus voltage (I−V) curves in which each data point is obtained from a
100 ns long rectangular pulse from a charged transmission line. A simplified schematic of a typical TLP system is shown in
Figure 5. TLP I−V curves of ESD protection devices accurately demonstrate the product’s ESD capability because the 10 s
of amps current levels and under 100 ns time scale match those of an ESD event. This is illustrated in Figure 6 where an 8 kV
IEC61000−4−2 current waveform is compared with TLP current pulses at 8 A and 16 A. A TLP curve shows the voltage at
which the device turns on as well as how well the device clamps voltage over a range of current levels. Typical TLP I−V curves
for the EMI813x are shown in Figure 5.
L
50
W
Coax Cable
10 MQ
V
C
SW
Attenuator
÷
I
M
50
W
Coax Cable
V
M
DUT
Oscilloscope
Figure 5. Simplified Schematic of a Typical TLP System
Figure 6. Comparison Between 8 kV IEC61000-4-2 and 8 A and 16 A TLP Waveforms
18
16
14
12
I (A)
I (A)
0
2
4
6
8
10
V
clamp
(V)
12
14
16
18
10
8
6
4
2
0
−18
−16
−14
−12
−10
−8
−6
−4
−2
0
0
−2
−4
−6
−8 −10
V
clamp
(V)
−12
−14
−16 −18
Figure 7. Positive and Negative TLP Waveforms
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