EMIF01-TV01F3
Single line IPAD™, EMI filter and ESD protection
Features
■
■
■
■
■
■
■
■
EMI symmetrical (I/O) low-pass filter
High efficiency EMI filtering
Lead-free package
400 µm pitch
Very low PCB space occupation: 0.6 mm
2
Very thin package: 0.6 mm
High reliability offered by monolithic integration
Reduction of parasitic elements through CSP
integration
Figure 1.
Pin configuration (bump side)
Flip Chip
(4 bumps)
A
B
1
2
Complies with the following standards
■
IEC 61000-4-2 level 4 on internal and external
pins:
– 15 kV (air discharge)
– 8 kV (contact discharge)
MIL STD 883F - Method 3015.7 Class 3
■
Pin
A1
A2
Description
TV OUT internal
GND
Pin
B1
B2
Description
TV OUT external
GND
Application
■
TV analog signal in TV_OUT interface
Figure 2.
Device configuration
R
TV out
External
B1
Description
The EMIF01-TV01F3 is a highly integrated array
designed to suppress EMI/RFI noise and provide
impedance matching for mobile phone and
portable applications. The EMIF01-TV01F3 is in a
Flip Chip package to offer space saving and high
RF performance.
This low pass filter includes ESD protection
circuitry which prevents damage to the protected
device when subjected to ESD surges up to
15 kV.
TV out
Internal
A1
GND
GND
TM:
IPAD is a trademark of STMicroelectronics.
May 2011
Doc ID 12078 Rev 3
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www.st.com
8
Characteristics
EMIF01-TV01F3
1
Characteristics
Table 1.
Symbol
Absolute maximum ratings
Parameter and test conditions
Internal pins (A1) and external pin (B1):
ESD discharge IEC 61000-4-2, air discharge
ESD discharge IEC 61000-4-2, contact discharge
Maximum junction temperature
Operating temperature range
Maximum power dissipation
Storage temperature range
Value
Unit
V
PP
T
j
T
op
P
T
stg
15
8
125
-30 to +85
80
-55 to 150
kV
°C
°C
°C
°C
Table 2.
Symbol
V
BR
I
RM
V
RM
V
CL
R
d
I
PP
R
I/O
C
line
Symbol
V
BR
I
RM
R
C
line
Electrical characteristics (T
amb
= 25 °C)
Parameters
Breakdown voltage
Leakage current @ V
RM
Stand-off voltage
Clamping voltage
Dynamic impedance
Peak pulse current
Series resistance between Input & Output
Input capacitance per line
Test conditions
I
R
= 1 mA
V
RM
= 3 V
Tolerance ± 5 %
@0V
75
30
35
Min
6
Typ
Max
8
0.2
Unit
V
µA
Ω
pF
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Doc ID 12078 Rev 3
EMIF01-TV01F3
Characteristics
Figure 3.
db
0.00
S21 (db) attenuation measurement Figure 4.
ESD response to IEC61000-4-2
(+15 kV air discharge)
TV out
internal
10 V/d
-10.00
-20.00
-30.00
TV out
external
10 V/d
-40.00
f (Hz)
-50.00
100.0k
1.0M
10.0M
100.0M
1.0G
100 ns/d
Figure 5.
ESD response to IEC61000-4-2
(-15 kV air discharge)
Figure 6.
C
LINE
(pF)
35
30
Line capacitance versus applied
voltage
F=1MHz
V
osc
=30mV
RMS
T
j
=25°C
TV out
internal
10 V/d
25
20
15
10
TV out
external
10 V/d
100 ns/d
5
V
LINE
(V)
0
0
1
2
3
4
5
6
Doc ID 12078 Rev 3
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Application information
EMIF01-TV01F3
2
Application information
Figure 7.
Aplac model
I1
Lbump Rbump
Rline
Rbump Lbump
O1
model = d1
model = d2
Rbump
Rbump
Lbump
Lbump
75p
Rs
Ls
I1
O1
Ls
Rs
Port1
Port2
Figure 8.
Aplac parameters
Variables
aplacvar Rline 75
aplacvar C_d1 17.5p
aplacvar C_d2 17.5p
aplacvar Ls 950pH
aplacvar Rs 150m
aplacvar Lbump96pH
aplacvar Rbump 20m
aplacvar Lgnd 75pH
Diode D1
BV=7
IBV=1m
CJO=C_d1
M=0.28
RS=0.48
VJ=0.6
TT=100n
Diode D2
BV=7
IBV=1m
CJO=C_d2
M=0.28
RS=0.7
VJ=0.6
TT=100n
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Doc ID 12078 Rev 3
EMIF01-TV01F3
Ordering information scheme
3
Ordering information scheme
Figure 9.
Ordering information scheme
EMIF
EMI Filter
Number of lines
Information
x = resistance value (Ohms)
z = capacitance value / 10 (pF)
or
2 letters = application
2 digits = version
Package
F = Flip Chip
x = 3: Lead-free, pitch = 400 µm, bump = 255 µm
yy
-
xx zz
Fx
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at:
www.st.com.
ECOPACK
®
is an ST trademark.
Figure 10. Package dimensions
400 µm ± 40
400 µm ± 40
605 µm ± 55
185 µm ± 10 µm
770 µm ± 30 µm
Doc ID 12078 Rev 3
185 µm ± 10 µm
255 µm ± 40
770 µm ± 30µm
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