MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD09MUP2
(a)
0.2+/-0.05
8.0+/-0.2
0.65+/-0.2
(c)
(b)
(b)
7.0+/-0.2
6.2+/-0.2
5.6+/-0.2
4.2+/-0.2
RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W
DESCRIPTION
RD09MUP2 is a MOS FET type transistor
specifically designed for UHF RF power
amplifiers applications.
(3.6)
(d)
FEATURES
•High power gain:
Pout>8W, Gp>10dB@Vdd=7.2V,f=520MHz
(4.5)
0.95+/-0.2
2.6+/-0.2
•High Efficiency: 50%min. (520MHz)
•Integrated gate protection diode
INDEX MARK
[Gate]
TOP VIEW
DETAIL A
SIDE VIEW
1.8+/-0.1
BOTTOM VIEW
Terminal No.
(a)Drain [output]
(b)Source [GND]
(c)Gate [input]
(d)Source
APPLICATION
SIDE VIEW
Standoff = max 0.05
For output stage of high power amplifiers in
UHF band mobile radio sets.
0.7+/-0.1
UNIT:mm
DETAIL A
NOTES:
1. ( ) Typical value
RoHS COMPLIANT
RD09MUP2 is a RoHS compliant product.
RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high
melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25
°C
UNLESS OTHERWISE NOTED)
SYMBOL
VDSS
VGSS
ID
Pin
Pch
Tj
Tstg
Rth j-c
PARAMETER
Drain to source voltage
Gate to source voltage
Drain Current
Input Power
Channel dissipation
Junction Temperature
Storage temperature
Thermal resistance
CONDITIONS
Vgs=0V
Vds=0V
-
Zg=Zl=50
Ω
Tc=25
°C
-
-
Junction to case
RATINGS
40
-5 to +10
4.0
1.6
83
150
-40 to +125
1.5
UNIT
V
V
A
W
W
°C
°C
°C/W
D
G
S
SCHEMATIC DRAWING
Note: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
SYMBOL
I
DSS
I
GSS
V
TH
Pout
ηD
PARAMETER
Zero gate voltage drain current
Gate to source leak current
Gate threshold Voltage
Output power
Drain efficiency
(Tc=25
°C
, UNLESS OTHERWISE NOTED)
CONDITIONS
V
DS
=17V, V
GS
=0V
V
GS
=10V, V
DS
=0V
V
DS
=12V, I
DS
=1mA
f=520MHz , V
DD
=7.2V
Pin=0.8W,Idq=1.0A
V
DD
=9.5V,Po=8W(Pin Control)
f=520MHz,Idq=1.0A,Zg=50
Ω
Load VSWR=20:1(All Phase)
MIN
-
-
0.5
8
50
LIMITS
TYP
MAX.
-
10
-
1
-
2.5
9
-
-
-
No destroy
UNIT
uA
uA
V
W
%
-
VSWRT Load VSWR tolerance
Note: Above parameters, ratings, limits and conditions are subject to change.
RD09MUP2
MITSUBISHI ELECTRIC
1/7
1st Jun. 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD09MUP2
Vgs-Ids CHARACTERISTICS
8
Ta=+25°C
Vds=10V
RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W
TYPICAL CHARACTERISTICS
60
CHANNEL DISSIPATION Pch(W
50
40
30
20
10
0
0
40
80
120
160
AMBIENT TEMPERATURE Ta(deg:C.)
200
0
0
1
2
Vgs(V)
3
4
On PCB with Termal sheet
and Heat-sink
(Size : 41 x 55mm, t=7.2 mm)
DRAIN DISSIPATION VS.
AMBIENT TEMPERATURE
*PCB: Glass epoxy (Size : 46.4 x 40.0mm, t=0.8 mm)
Thermal sheet: GELTEC COOH-4000(t=0.5mm)
6
Ids(A),GM(S)
Ids
4
GM
2
Vds-Ids CHARACTERISTICS
9
Ta=+25°C
Vds VS. Ciss CHARACTERISTICS
Vgs=4.5V
160
140
Ta=+25°C
f=1MHz
8
7
6
Ids(A)
5
4
3
2
1
0
0
1
2
3
4
5
Vds(V)
6
7
8
9
Vgs=4.0V
120
Ciss(pF)
100
80
60
40
20
0
0
5
10
Vds(V)
15
20
Vgs=3.5V
Vgs=3.0V
Vds VS. Coss CHARACTERISTICS
160
140
120
Coss(pF)
Crss(pF)
100
80
60
40
20
0
0
5
10
Vds(V)
15
20
Ta=+25°C
f=1MHz
Vds VS. Crss CHARACTERISTICS
20
18
16
14
12
10
8
6
4
2
0
0
5
10
Vds(V)
15
20
Ta=+25°C
f=1MHz
RD09MUP2
MITSUBISHI ELECTRIC
2/7
1st Jun. 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD09MUP2
Pin-Po CHARACTERISTICS @f=520MHz
20
80
Ta=25°C
f=520MHz
Vdd=7.2V
Idq=1.0A
RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS @f=520MHz
40
Po(dBm) , Gp(dB) , Idd(A)
Ta=+25°C
f=520MHz
Vdd=7.2V
Idq=1.0A
Po
80
15
Pout(W) , Idd(A)
60
ηd(%)
η½
70
ηd
60
Po
30
50
40
30
ηd(%)
20
Gp
40
10
10
Ｉ½½
20
5
Idd
20
10
0
0
5
10
15
20
Pin(dBm)
25
30
35
0
0
0.0
0.5
1.0
Pin(W)
1.5
0
2.0
Vdd-Po CHARACTERISTICS @f=520MHz
20
Ta=25°C
f=520MHz
Pin=1.0W
Idq=1.0A
Zg=ZI=50 ohm
10
15
Po
8
Po(W)
10
5
5
Idd
3
0
4
6
8
Vdd(V)
10
12
0
RD09MUP2
Idd(A)
MITSUBISHI ELECTRIC
3/7
1st Jun. 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD09MUP2
Vdd
RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W
TEST CIRCUIT (f=520MHz)
Vgg
C1
W 19mm
RD09MUP2
520MHz
4.7K Ohm
RF-in
330pF
5pF
33pF
13mm
14.5mm
3.5mm
6mm
3mm
47pF
5mm
19mm W
C2
22uF,50V
L 5pF
21mm
5pF
RF-out
7mm 330pF
Note:Board material= glass-Epoxy Substrate
L:43.7nH,6Turns,D:0.43mm,2.46mm(outside diameter)
Micro strip line width=1.3mm/50OHM,er=4.8,t=0.8mm C1,C2:2200pF
W:Line width=1.0mm
RD09MUP2
MITSUBISHI ELECTRIC
4/7
1st Jun. 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD09MUP2
S12
S22
(ang)
-7.1
-8.2
-10.4
-10.9
-10.0
-8.4
-6.0
-4.1
-5.6
0.6
2.6
8.2
15.1
25.3
27.2
35.5
40.1
45.0
51.3
56.2
56.9
59.9
64.2
67.0
66.6
68.9
70.7
70.9
72.1
72.0
74.3
74.2
74.5
74.9
74.1
72.8
75.4
75.1
76.0
75.8
75.0
75.8
75.8
75.6
76.0
76.5
(mag)
0.798
0.804
0.808
0.812
0.819
0.830
0.842
0.851
0.857
0.859
0.863
0.866
0.878
0.889
0.895
0.897
0.899
0.900
0.906
0.913
0.919
0.921
0.924
0.925
0.924
0.928
0.933
0.937
0.939
0.936
0.937
0.937
0.938
0.943
0.944
0.949
0.946
0.946
0.944
0.948
0.949
0.952
0.952
0.949
0.951
0.952
(ang)
-173.9
-174.4
-174.9
-175.1
-175.2
-175.1
-175.3
-175.3
-175.8
-176.1
-176.3
-176.8
-177.1
-177.4
-177.8
-178.1
-178.6
-178.8
-179.3
-179.5
179.8
179.6
179.0
178.8
178.6
178.2
177.7
177.3
177.0
176.7
176.4
176.1
175.8
175.5
175.0
174.7
174.7
174.5
174.1
173.8
173.4
172.8
172.7
172.7
172.6
172.2
(mag)
0.016
0.014
0.014
0.013
0.013
0.011
0.011
0.010
0.010
0.009
0.008
0.008
0.008
0.008
0.007
0.008
0.008
0.008
0.009
0.009
0.010
0.011
0.012
0.012
0.012
0.014
0.014
0.015
0.015
0.016
0.017
0.018
0.019
0.019
0.020
0.021
0.022
0.022
0.023
0.024
0.025
0.026
0.026
0.027
0.028
0.029
RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W
RD09MUP2 S-PARAMETER DATA (@Vdd=7.2V, Id=500mA)
Freq.
[MHz]
100
120
140
160
180
200
220
240
260
280
300
320
340
360
380
400
420
440
460
480
500
520
540
560
580
600
620
640
660
680
700
720
740
760
780
800
820
840
860
880
900
920
940
960
980
1000
S11
(mag)
0.900
0.901
0.905
0.908
0.909
0.912
0.916
0.918
0.922
0.923
0.928
0.930
0.933
0.936
0.937
0.939
0.939
0.945
0.947
0.950
0.952
0.950
0.952
0.953
0.953
0.956
0.957
0.961
0.957
0.961
0.962
0.960
0.962
0.963
0.963
0.964
0.962
0.964
0.965
0.965
0.962
0.967
0.963
0.964
0.966
0.964
(ang)
-175.7
-176.4
-176.7
-177.2
-177.5
-177.6
-178.0
-178.5
-178.7
-178.9
-179.0
-179.1
-179.3
-179.6
179.9
179.7
179.3
179.1
178.9
178.8
178.7
178.3
178.1
177.6
177.2
177.0
177.0
176.9
176.8
176.5
176.2
176.0
175.5
175.3
175.2
175.0
175.0
174.7
174.5
174.1
173.8
173.5
173.5
173.2
173.1
173.0
(mag)
4.425
3.651
3.056
2.614
2.273
2.003
1.787
1.602
1.442
1.297
1.176
1.075
0.989
0.910
0.841
0.775
0.718
0.667
0.622
0.582
0.548
0.513
0.480
0.455
0.427
0.402
0.383
0.362
0.344
0.326
0.311
0.298
0.283
0.269
0.259
0.247
0.237
0.230
0.220
0.211
0.202
0.193
0.189
0.180
0.176
0.170
S21
(ang)
75.0
71.1
67.4
64.2
61.4
58.7
55.9
53.3
50.6
48.0
45.8
44.1
42.3
40.0
37.9
36.3
34.7
33.4
32.1
30.7
29.2
28.0
26.8
25.7
24.4
23.7
23.2
22.1
21.3
20.4
19.5
19.0
18.6
17.5
17.2
16.9
16.5
15.8
16.2
15.4
15.1
15.0
14.4
13.8
14.6
14.0
RD09MUP2
MITSUBISHI ELECTRIC
5/7
1st Jun. 2006
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