MMAD1108(e3)
Available
Switching Diode Array
Steering Diode TVS Array
TM
DESCRIPTION
These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a
planar process and mounted in a 16-Pin SOIC package for use as steering diodes protecting
up to eight I/O ports from ESD, EFT, or surge by directing them either to the positive side of
the power supply line or to ground (see
Figure 1).
An external TVS diode may be added
between the positive supply line and ground to prevent overvoltage on the supply rail. They
may also be used in fast switching core-driver applications. This includes computers and
peripheral equipment such as magnetic cores, thin-film memories, plated-wire memories, etc.,
as well as decoding or encoding applications. These arrays offer many advantages of
integrated circuits such as high-density packaging and improved reliability. This is a result of
fewer pick and place operations, smaller footprint, smaller weight, and elimination of various
discrete packages that may not be as user friendly in PC board mounting. They are available
with either tin-lead plating terminations or as RoHS compliant with annealed matte-tin finish.
16-Pin Package
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
•
•
•
•
•
•
8-diode array protects 8 lines
Molded 16-Pin SOIC package
UL 94V-0 flammability classification
Low capacitance 1.5 pF per diode
Switching speeds less than 5 ns
IEC 61000-4 compatible:
61000-4-2 (ESD): Air 15 kV, contact – 8 kV
61000-4-4 (EFT): 40 A – 5/50 ns
61000-4-5 (surge): 12 A, 8/20 µs
•
RoHS compliant device is available
Top Viewing Pin Layout
APPLICATIONS / BENEFITS
•
•
Low capacitance steering diode protection for high frequency data lines
Ideal for:
RS-232 & RS-422 Interface Networks.
Ethernet: 10 Base T
Computer I / O Ports
LAN
Switching Core Drivers
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
RF01065, Rev A (12/11/13)
©2013 Microsemi Corporation
Ph: 949-380-6100
sales.support@microsemi.com
Page 1 of 3
One Enterprise, Aliso Viejo, CA 92656
MMAD1108(e3)
MAXIMUM RATINGS
Parameters/Test Conditions
Junction and Storage Temperature
Peak Working Reverse Voltage
Repetitive Peak Forward Current (one diode)
Forward Surge Current
@ 8.3 ms
@ 8/20
µs
Rated Average Power Dissipation (total package)
Solder Temperature @ 10 s
Symbol
T
J
and T
STG
V
RWM
I
FRM
I
FSM
P
M(AV)
Value
-55 to +150
75
400
2
12
1500
260
Unit
ºC/W
V
mA
A
mW
ºC
MECHANICAL and PACKAGING
•
•
•
•
•
•
CASE: Void-free transfer molded thermosetting epoxy body meeting UL94V-0 flammability classification.
TERMINALS: Tin-lead or RoHS compliant annealed matte-tin plating solderable per MIL-STD-750 method 2026.
MARKING: MSC logo, MMAD1108 or MMAD1108e3 and date code. Pin #1 is to the left of the dot or indent on top of package.
DELIVERY option: Tape and reel or carrier tube. Consult factory for quantities.
WEIGHT: Approximately 0.127 grams
See
Package Dimensions
on last page.
PART NOMENCLATURE
MMAD
Surface Mount Package
Series Number
1108
(e3)
RoHS Compliance
e3 = RoHS compliant
Blank = non-RoHS compliant
Symbol
C
T
I
R
V
(BR)
V
F
V
RWM
SYMBOLS & DEFINITIONS
Definition
Total Capacitance: The total small signal capacitance between the diode terminals of a complete device.
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature.
Breakdown Voltage: The voltage across the device at a specified current I
(BR)
in the breakdown region.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range.
ELECTRICAL CHARACTERISTICS
@ 25 ºC unless otherwise stated
BREAKDOWN
VOLTAGE
V
(BR)
@ I
(BR)
=100 µA
V
MIN
MMAD1108
MMAD1108e3
90
MAX
0.200
LEAKAGE
CURRENT
I
R
T
A
= 25
°C
µA
@V
R
20
MAX
300
LEAKAGE
CURRENT
I
R
T
A
= 150
°C
µA
@V
R
20
TOTAL
CAPACITANCE
C
T
@0V
pF
TYP
1.5
REVERSE
RECOVERY
TIME
t
rr
ns
MAX
5.0
FORWARD
VOLTAGE
V
F
I
F
= 10 mA
V
MAX
1.00
FORWARD
VOLTAGE
V
F
I
F
= 100 mA
V
MAX
1.20
PART
NUMBER
RF01065, Rev A (12/11/13)
©2013 Microsemi Corporation
Ph: 949-380-6100
sales.support@microsemi.com
Page 2 of 3
One Enterprise, Aliso Viejo, CA 92656
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