Micropower Voltage Reference
Features
Description
The AS1004 is a two-terminal precision band-gap voltage
reference with a low turn-on current of 10
µA.
Emulating a 1.235 V zener diode, the AS1004 operates more
than three orders of magnitude of output current with minute
output impedance and guaranteed stability. With an initial
tolerance of
±
4 mV and guaranteed temperature perfor-
mance, it is ideal for precision instrumentation, especially in
low power applications. Being a low-voltage reference, the
AS1004 is also well-suited as a reference for low-voltage
power supply applications, especially in power supplies
intended for low-voltage logic systems, laptop computers
and other portable or battery operated equipment.
The AS1004 is pin-for-pin compatible with the LT1004 and
the LM385 and offers improved specifications over both the
LM385 and the MP5010. It is also available as a 2.5 V
reference with a guaranteed start-up current of 20
µA.
AS1004
•
•
•
•
•
•
•
•
Low voltage reference
10
µA
turn-on current for
AS1004-1.2
20
µA
turn-on current for
AS1004-2.5
±
4 mV (0.3 %) initial accuracy
for AS1004-1.2
±
20 mV (0.8 %) initial accuracy
for AS1004-2.5
Guaranteed operation to 20 mA.
Over three orders of magnitude
of operating current!
Temperature performance
guaranteed
Very low dynamic impedance
Pin Configuration
—
TO-92 (LP)
Top view
SOIC (D)
SOT-89 (S)
N/C
1
2
3
4
8
7
6
5
CATHODE
N/C
ANODE
N/C
N/C
CATHODE
N/C
CATHODE
ANODE
ANODE
N/C
ANODE
CATHODE
Ordering Information
Description
Temperature Range
Order Codes
TO-92
8-Pin Plastic SOIC
SOT-89
© ASTEC Semiconductor
0 to 70° C
0 to 70° C
0 to 70° C
29
AS1004-1.2LP
AS1004-1.2D
AS1004-1.2S
AS1004-2.5LP
AS1004-2.5D
AS1004-2.5S
AS1004
Simplified Schematic
Micropower Voltage Reference
K
R2
Q13
Q12
Q4
Q3
C2
R10
Q7
R4
Q11
C3
R11
Q5
Q10
Q1
C1
R12
Q9
Q14
Q8
R6
R7
Q6
A
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
Reverse Breakdown Current
Forward Current
Continuous Power Dissipation at 25° C
TO-92
8LSOIC
SOT-89
Maximum Junction Temp
Storage Temperature
Lead Temperature, Soldering 10 Seconds
I
Z
I
F
P
D
30
30
mA
mA
775
750
1000
T
J
T
STG
T
L
150
– 65 to 150
300
mW
mW
mW
°C
°C
°C
Recommended Conditions
Parameter
Symbol
Rating
Unit
Typical Thermal Resistances
Package
θ
JA
θ
JC
Typical Derating
Cathode Current
I
Z
100
µA
TO-92
8L SOIC
SOT-89
160° C/W
175° C/W
110° C/W
80° C/W
45° C/W
8° C/W
6.3 mW/°C
5.7 mW/°C
9.1 mW/°C
ASTEC Semiconductor
30
Micropower Voltage Reference
Electrical Characteristics
AS1004
Electrical Characteristics are guaranteed over full junction temperature range (0 to 70° C). Ambient temperature must be derated based
on power dissipation and package thermal characteristics.
Parameter
Reverse Breakdown Voltage
Symbol
V
Z
Test Condition
I
Z
= 100
µA,
T
J
= 25° C
0° C
≤
T
A
≤
70° C
Average Temperature
Coefficient
Minimum Operating Current
Reverse Breakdown Voltage
Change With Current
∆V
Z
/∆T
I
Z (min)
∆V
Z
/∆I
Z
I
min
≤
I
Z
≤
1 mA
Over Temperature
1 mA
≤
I
Z
≤
20 mA
Over Temperature
Reverse Dynamic Impedance Z
Z
I
Z
= 100 mA, f = 25 Hz
Over Temperature
Wide Band Noise
Long Term Stability
e
n
∆V
Z
/∆T
I
Z
= 100
µA
10 Hz
≤
f
≤
10 KHz
I
Z
= 100
µA
T
A
= 25° C
±
0.1° C
I
min
≤
I
Z
≤
20 mA
Min
AS1004-1.2
Typ
Max
1.235
1.235
20
4
0.5
0.5
6.5
6.5
0.2
1
60
20
10
1
1.5
10
20
0.6
1.5
60
60
1.239
1.245
Min
2.480
2.470
AS1004-2.5
Typ
Max
2.500
2.500
60
12
0.5
0.5
6.5
6.5
0.8
20
1
1.5
10
20
0.9
1.5
2.520
2.530
Unit
V
V
ppm/°C
µA
mV
mV
mV
mV
Ω
Ω
µV
ppm/kH
1.231
1.225
Typical Performance Curves
Calculating Average Temperature
Coefficient for the AS1004-1.2 Reference
1.245
AS1004-1.2 Reference Voltage vs.
Ambient Temperature
I
Z
= 100
µA
ppm
0
0
0
∆V
REF
V
Z
– Reference Voltage (V)
mV
%
∆T
1.240
-5
5000
0.5
1.235
-10
0
10
20
30
40
50
60 70
Temperature (°C)
0.025 mV/ °C
0.002 %/ °C
20 ppm/ °C
Average Temperature Coefficient =
∆V
REF
∆T
1.230
1.225
–55 –35
–15 5
25
45 65 85
T
A
– Ambient Temperature (°C)
105
125
Figure 1
ASTEC Semiconductor
Figure 2
31
AS1004
Typical Performance Curves
Micropower Voltage Reference
Calculating Average Temperature
Coefficient for the AS1004-2.5 Reference
ppm
mV
2.520
AS1004-2.5 Reference Voltage
versus Ambient Temperature
I
Z
= 100
µA
0
0
%
0
∆V
REF
V
Z
– Reference Voltage (V)
∆T
-5
5000
0.5
2.510
2.500
-10
0
10
20
30
40
50
60 70
Temperature (°C)
0.046 mV/ °C
0.004 %/ °C
37 ppm/ °C
Average Temperature Coefficient =
∆V
REF
∆T
2.490
2.480
–55 –35
–15 5
25
45 65 85
T
A
– Ambient Temperature (°C)
105
125
Figure 3
Figure 4
AS1004-1.2 Reverse Operating
Characteristics
100
T
A
= –55° C to 125° C
100
AS1004-2.5 Reverse Operating
Characteristics
T
A
= –55° C to 125° C
I
R
– Reverse Current (µA)
10
I
R
– Reverse Current (µA)
0
0.2
0.4
0.8
0.6
1
V
R
– Reverse Voltage (V)
1.2
1.4
10
1
1
0.1
0.1
0
0.5
1.0
1.5
2.0
V
R
– Reverse Voltage (V)
2.5
3.0
Figure 5
Figure 6
ASTEC Semiconductor
32
Micropower Voltage Reference
Typical Performance Curves
AS1004
AS1004-1.2 Change in Reference
Voltage versus Reverse Current
16
T
A
= –55° C to 125° C
∆V
Z
– Change In Reference Voltage (mA)
AS1004-2.5 Change in Reference
Voltage versus Reverse Current
16
T
A
= –55° C to 125° C
12
∆V
Z
– Change In Reference Voltage (mA)
0.1
1
10
I
R
– Reverse Current (mA)
100
12
8
8
4
4
0
0
–4
0.01
–4
0.01
0.1
1
10
I
R
– Reverse Current (mA)
100
Figure 7
Figure 8
AS1004-1.2 Transient Response
1.5
3
AS1004-2.5 Transient Response
1
OUTPUT
Input and Output Voltage (V)
36 kΩ
Input and Output Voltage (V)
2
OUTPUT
36 kΩ
V
I
V
O
0.5
V
I
V
O
1
0
5
0
5
INPUT
INPUT
0
0
50
t – Time (µs)
100
500
600
0
0
50
t – Time (µs)
100
500
600
Figure 9
Figure 10
ASTEC Semiconductor
33
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