Philips Semiconductors
Product specification
High-speed diodes
FEATURES
•
Hermetically sealed leaded glass
SOD27 (DO-35) package
•
High switching speed: max. 4 ns
•
General application
•
Continuous reverse voltage:
max. 50 V
•
Repetitive peak reverse voltage:
max. 75 V
•
Repetitive peak forward current:
max. 600 mA and 450 mA
respectively.
The marking band indicates the cathode.
handbook, halfpage
k
1N4150; 1N4151
DESCRIPTION
The 1N4150 and 1N4151 are high-speed switching diodes fabricated in planar
technology, and encapsulated in hermetically sealed leaded glass SOD27
(DO-35) packages.
a
MAM246
APPLICATIONS
•
High-speed switching
•
1N4150: general purpose use in
computer and industrial
applications
•
1N4151: military and industrial
applications.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
V
R
I
F
PARAMETER
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
1N4150
1N4151
I
FRM
repetitive peak forward current
1N4150
1N4151
I
FSM
non-repetitive peak forward current
square wave; T
j
= 25
°C
prior to
surge; see Fig.4
t = 1
µs
t = 1 ms
t=1s
P
tot
T
stg
T
j
Note
1. Device mounted on an FR4 printed-circuit board; lead length 10 mm.
total power dissipation
storage temperature
junction temperature
T
amb
= 25
°C;
note 1
−
−
−
−
−65
−
4
1
0.5
500
+200
200
A
A
A
mW
°C
°C
−
−
600
450
mA
mA
see Fig.2; note 1
−
−
300
200
mA
mA
CONDITIONS
−
−
MIN.
MAX.
75
50
V
V
UNIT
1999 Jun 01
2
Philips Semiconductors
Product specification
High-speed diodes
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
1N4150
see Fig.3
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 100 mA
I
F
= 200 mA
1N4151
I
R
reverse current
1N4150
1N4151
I
R
reverse current
1N4150
1N4151
C
d
diode capacitance
1N4150
1N4151
t
rr
reverse recovery time
1N4150
when switched from I
F
= 10 mA to
I
R
= 1 mA; R
L
= 100
Ω;
measured at
I
R
= 0.1 mA; see Fig.7
when switched from I
F
= 10 mA to 200 mA
to I
R
= 10 mA to 200 mA; R
L
= 100
Ω;
measured at I
R
= 0.1
×
I
F
; see Fig.7
when switched from I
F
= 200 mA to 400 mA
to I
R
= 200 mA to 400 mA; R
L
= 100
Ω;
measured at I
R
= 0.1
×
I
F
; see Fig.7
t
rr
reverse recovery time
1N4151
when switched from I
F
= 10 mA to
I
R
= 10 mA; R
L
= 100
Ω;
measured at
I
R
= 1 mA; see Fig.7
when switched from I
F
= 10 mA to
I
R
= 60 mA; R
L
= 100
Ω;
measured at
I
R
= 1 mA; see Fig.7
t
fr
forward recovery time
when switched to I
F
= 200 mA; t
r
= 0.4 ns;
measured at V
F
= 1 V; see Fig.8
f = 1 MHz; V
R
= 0; see Fig.6
−
−
−
−
V
R
= 50 V; T
j
= 150
°C;
see Fig.5
−
−
I
F
= 50 mA
V
R
= 50 V; see Fig.5
−
−
CONDITIONS
1N4150; 1N4151
MIN.
540
660
760
820
870
−
MAX.
620
740
860
920
1000
1000
0.1
0.05
100
50
2.5
2
6
4
UNIT
mV
mV
mV
mV
mV
mV
µA
µA
µA
µA
pF
pF
ns
ns
−
6
ns
−
−
4
2
ns
ns
−
10
ns
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on a printed circuit-board without metallization pad.
1999 Jun 01
3
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
CONDITIONS
lead length 10 mm
lead length 10 mm; note 1
VALUE
240
350
UNIT
K/W
K/W
Philips Semiconductors
Product specification
High-speed diodes
GRAPHICAL DATA
MBG456
1N4150; 1N4151
handbook, halfpage
400
handbook, halfpage
600
MGD291
IF
(mA)
300
(1)
IF
(mA)
400
(1)
(2)
200
(2)
200
100
0
0
100
Tamb (
o
C)
200
0
0
1
VF (V)
2
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
(1) 1N4150.
(2) 1N4151.
(1) T
j
= 175
°C;
typical values.
(2) T
j
= 25
°C;
typical values.
Fig.2
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3
Forward current as a function of forward
voltage.
10
2
handbook, full pagewidth
IFSM
(A)
MBG704
10
1
10
−1
1
10
10
2
10
3
tp (µs)
10
4
Based on square wave currents.
T
j
= 25
°C
prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1999 Jun 01
4
Linux开发
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
