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K6R1004C1B-8: 产品描述256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out; 文件大小84KB，共8页; 制造商SAMSUNG(三星); 官网地址http://www.samsung.com/Products/Semiconductor/

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K6R1004C1B-8概述

256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out

	K6R1004C1B-8	K6R1004C1B	K6R1004C1B-12	K6R1004C1B-10	K6R1004C1B-J8	K6R1004C1B-C8	K6R1004C1B-C12	K6R1004C1B-C10	K6R1004C1B-J12	K6R1004C1B-J10
描述	256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out	256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out	256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out	256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out	256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out	256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out	256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out	256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out	256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out	256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out

器件捷径: E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ

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