2SK3596-01L,S,SJ
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
(mm)
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
P4
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Symbol
Ratings
Unit
V
V
DS
200
V
V
DSX *5
170
A
Continuous drain current
I
D
±30
A
Pulsed drain current
I
D(puls]
±120
V
Gate-source voltage
V
GS
±30
A
Non-repetitive Avalanche current I
AS *2
30
mJ
Maximum Avalanche Energy
E
AS *1
387
kV/µs
Maximum Drain-Source dV/dt
dV
DS
/dt
*4
20
Peak Diode Recovery dV/dt
dV/dt
*3
5
kV/µs
°C
Max. power dissipation
P
D
Ta=25
1.67
W
°C
Tc=25
135
Operating and storage
T
ch
+150
°C
-55 to +150
temperature range
T
stg
°C
< 150°C *3 I
F
< -I
D
, -di/dt=50A/µs, Vcc < BV
DSS
, Tch < 150°C
*1 L=689µH, Vcc=48V
*2 Tch=
=
=
=
*4 V
DS
< 200V *5 V
GS
=-30V
=
Item
Drain-source voltage
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (T
c
=25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Test Conditions
I
D
= 250µA
V
GS
=0V
I
D
= 250µA
V
DS
=V
GS
V
DS
=200V V
GS
=0V
V
DS
=160V V
GS
=0V
V
GS
=±30V V
DS
=0V
I
D
=15A V
GS
=10V
I
D
=15A V
DS
=25V
V
DS
=75V
V
GS
=0V
f=1MHz
V
CC
=48V I
D
=15A
V
GS
=10V
R
GS
=10
Ω
V
CC
=100V
I
D
=30A
V
GS
=10V
L=100µH T
ch
=25°C
I
F
=30A V
GS
=0V T
ch
=25°C
I
F
=30A V
GS
=0V
-di/dt=100A/µs T
ch
=25°C
T
ch
=25°C
T
ch
=125°C
Min.
200
3.0
Typ.
Max.
5.0
25
250
100
66
Units
V
V
µA
nA
mΩ
S
pF
10
50
12.5
25
1960
2940
260
390
18
27
20
30
17
26
53
80
19
29
51
76.5
15
22.5
16
24
30
1.10
1.65
0.19
1.4
ns
nC
A
V
µs
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
R
th(ch-c)
R
th(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max.
0.926
75.0
Units
°C/W
°C/W
www.fujielectric.co.jp/denshi/scd
1
2SK3596-01L,S,SJ
Characteristics
Allowable Power Dissipation
PD=f(Tc)
FUJI POWER MOSFET
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=30A
500
200
175
400
150
125
100
75
50
100
25
0
0
25
50
75
100
125
150
0
0
25
50
75
100
125
150
300
EAV [mJ]
PD [W]
200
Tc [
°
C]
starting Tch [
°
C]
Typical Output Characteristics
ID=f(VDS):80µs Pulse test,Tch=25°C
120
20V
100
10V
8V
80
7.5V
10
100
Typical Transfer Characteristic
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
ID [A]
60
7.0V
40
6.5V
6.0V
ID[A]
1
20
VGS=5.5V
0
0
2
4
6
8
10
12
0
1
2
3
4
5
6
7
8
9
10
0.1
VDS [V]
VGS[V]
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
100
0.20
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
0.15
VGS=
6.0V
5.5V
6.5V
7.0V
RDS(on) [
Ω
]
10
7.5V
8V
0.10
10V
20V
gfs [S]
1
0.05
0.1
0.1
0.00
1
10
100
0
20
40
60
80
100
120
ID [A]
ID [A]
2
2SK3596-01L,S,SJ
FUJI POWER MOSFET
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=15A,VGS=10V
200
180
160
7.0
6.5
6.0
5.5
5.0
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250
µ
A
RDS(on) [ m
Ω
]
VGS(th) [V]
140
120
100
80
60
typ.
40
20
0
-50
-25
0
25
50
75
100
125
150
max.
max.
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25
50
75
100
125
150
min.
Tch [
°
C]
Tch [
°
C]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=30A, Tch=25°C
10
14
12
10
0
1
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Ciss
10
Vcc= 100V
VGS [V]
8
6
C [nF]
Coss
10
4
2
0
0
10
20
30
40
50
60
70
80
-1
Crss
10
-2
10
-1
10
0
10
1
10
2
Qg [nC]
VDS [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs Pulse test,Tch=25°C
100
10
3
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=48V, VGS=10V, RG=10Ω
tf
2
10
10
td(off)
IF [A]
t [ns]
td(on)
1
1
10
tr
0.1
0.00
10
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
0
10
-1
10
0
10
1
10
2
VSD [V]
ID [A]
3
2SK3596-01L,S,SJ
Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
10
0
2
FUJI POWER MOSFET
10
1
Maximum Avalanche Current Pulsewidth
I
AV
=f(t
AV
):starting Tch=25°C. Vcc=48V
10
Avalanche current I
AV
[A]
Single Pulse
10
1
Zth(ch-c) [°C/W]
10
-1
10
0
10
-2
10
-1
10
-3
10
-6
-2
10
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
-8
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
t [sec]
t
AV
[sec]
Outline Drawings (mm)
FUJI POWER MOS FET
OUT VIEW
FUJI POWER MOS FET
OUT VIEW
FUJI POWER MOS FET
See Note: 1.
See Note: 1.
Trademark
Fig. 1.
4
See Note: 1.
Trademark
Trademark
Fig. 1.
Lot No.
Lot No.
Type name
Lot No.
Type name
Type name
PRE-SOLDER
Fig. 1.
Fig. 1.
CONNECTION
1
4
2
3
GATE
DRAIN
SOURCE
Solder Plating
CONNECTION
1
4 2
3
GATE
DRAIN
SOURCE
Solder Plating
Pre-Solder
CONNECTION
Pre-Solder
Notes
1. ( ) : Reference dimensions.
2. The metal part is covered with
the solder plating, part of cutting
is without the solder plating.
DIMENSIONS ARE IN MILLIMETERS.
Notes
1. ( ) : Reference dimensions.
Note: 1. Guaranteed mark of
avalanche ruggedness.
2. The metal part is covered with
the solder plating, part of cutting
is without the solder plating.
DIMENSIONS ARE IN MILLIMETERS.
1
2
3
1 GATE
2 DRAIN
3 SOURCE
Note: 1. Guaranteed mark of
avalanche ruggedness.
Note: 1. Guaranteed mark of avalanche ruggedness.
DIMENSIONS ARE IN MILLIMETERS.
4
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