2SB1672
Transistors
Power Transistor (−80V,
−7A)
2SB1672
!Features
1) Low saturation voltage.
(Typ. V
CE(sat)
=
−0.3V
at I
C
/ I
B
=−4A /
−0.4A)
2) Excellent DC current gain characteristics.
3) Pc = 30W (Tc = 25°C).
4) Wide SOA (safe operating area).
5) Complements the 2SD2611.
!External
dimensions
(Units : mm)
10.0
4.5
φ
3.2
2.8
15.0
12.0
8.0
5.0
1.2
14.0
1.3
0.8
2.54
2.54
(1) (2) (3)
(1) (2) (3)
0.75
2.6
!Absolute
maximum ratings
(Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
Single pulse,
Pw
=
100ms
ROHM : TO-220FN
Unit
V
V
V
A(DC)
A(Pulse)
W
W(Tc=25°C)
°C
°C
*
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
−80
−80
−5
−7
−10
2
30
150
−55 ∼ +150
!Packaging
specifications and h
FE
Type
Package
h
FE
Code
Basic ordering unit (pieces)
2SB1672
TO-220FN
EF
−
500
!Electrical
characteristics
(Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current
transfer ratio
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
Cob
Min.
−80
−80
−5
−
−
−
−
100
−
−
Typ.
−
−
−
−
−
−
−
−
12
200
Max.
−
−
−
−10
−10
−1
−1.5
320
−
−
Unit
V
V
V
µA
µA
V
V
−
MHz
pF
I
C
=
−50µA
I
C
=
−1mA
I
E
=
−50µA
V
CB
=
−80V
V
EB
=
−4V
I
C
/I
B
=
−4A/−0.4A
I
C
/I
B
=
−4A/−0.4A
V
CE
/I
C
=
−5V/−1A
V
CE
=
−5V
, I
E
=
0.5A , f
=
5MHz
V
CB
=
−10V
, I
E
=
0A , f
=
1MHz
∗
∗
Conditions
Transition frequency
Output capacitance
∗
Measured using pulse current
传感器
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
