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2SC5696

产品描述Power Bipolar Transistor, 12A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PMLH, 3 PIN
产品类别分立半导体    晶体管   
文件大小31KB,共4页
制造商SANYO
官网地址http://www.semic.sanyo.co.jp/english/index-e.html
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2SC5696概述

Power Bipolar Transistor, 12A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PMLH, 3 PIN

2SC5696规格参数

参数名称属性值
Objectid1914130481
零件包装代码TO-3PMLH
包装说明FLANGE MOUNT, R-PSFM-T3
针数3
Reach Compliance Codeunknown
ECCN代码EAR99
其他特性HIGH RELIABILITY
最大集电极电流 (IC)12 A
集电极-发射极最大电压800 V
配置SINGLE WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE)4
JESD-30 代码R-PSFM-T3
元件数量1
端子数量3
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
极性/信道类型NPN
最大功率耗散 (Abs)85 W
认证状态Not Qualified
表面贴装NO
端子形式THROUGH-HOLE
端子位置SINGLE
晶体管应用AMPLIFIER
晶体管元件材料SILICON

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Ordering number : ENN6663A
2SC5696
NPN Triple Diffused Planar Silicon Transistor
2SC5696
Color TV Horizontal Deflection
Output Applications
Features
Package Dimensions
unit : mm
2174
[2SC5696]
16.0
3.4
5.6
3.1
High speed.
High breakdown voltage(VCBO=1600V).
High reliability(Adoption of HVP process).
Adoption of MBIT process.
On-chip damper diode.
5.0
21.0
22.0
8.0
4.0
2.8
2.0
0.7
20.4
0.9
1
2
5.45
3
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25°C
Conditions
5.45
3.5
Ratings
1600
800
5
12
36
3.0
85
150
--55 to +150
0.8
2.1
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PMLH
Unit
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Symbol
ICBO
ICES
VCEO(sus)
IEBO
VCE(sat)
VBE(sat)
Conditions
VCB=800V, IE=0
VCE=1600V, RBE=0
IC=100mA, IB=0
VEB=4V, IC=0
IC=7.2A, IB=1.8A
IC=7.2A, IB=1.8A
800
80
800
3
1.5
Ratings
min
typ
max
10
1.0
Unit
µA
mA
V
mA
V
V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11901 TS IM TA-3207 / 82200 TS IM TA-2994 No.6663-1/4

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