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30DF1Z

产品描述1.66 A, 100 V, SILICON, RECTIFIER DIODE
产品类别半导体    分立半导体   
文件大小44KB,共2页
制造商ETC
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30DF1Z概述

1.66 A, 100 V, SILICON, RECTIFIER DIODE

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BL
FEATURES
Low cos t
GALAXY ELECTRICAL
30DF1
(Z)---30DF2(Z)
VOLT AGE RANGE: 100 --- 200 V
CURRENT : 3.0 A
FAST RECOVERY RECT IFIERS
DO - 27
D iffus ed junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned w ith Freon Alcohol,Is opropanol and
s im ilar s olvents
MECHANICAL DATA
Cas e:JEDEC DO--27,m olded plas tic
Term inals : Axial lead ,s olderable per
MIL- STD -202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041ounces ,1.15 gram s
Mounting pos ition: Any
MAXIM UM RATINGS AND ELECTRICAL CHARACTERISTICS
R atings at 25
am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,50Hz,res is tive or inductive load. For capacitive load,derate by 20% .
30
DF1
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average f orw ard rectif ied current
9.5mm lead length,
@T
A
=75
30
DF2
200
140
200
3.0
UNITS
V
V
V
A
V
RRM
V
R MS
V
DC
I
F (AV)
100
70
100
Peak f orw ard surge current
10ms single half -sine-w ave
superimposed on rated load
@T
J
=125
I
F SM
200.0
A
Maximum ins tantaneous f orw ard voltage
@ 3.0A
Maximum reverse current
at rated DC bloc king voltage
@T
A
=25
@T
A
=100
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
1.0
10.0
200.0
200
32
22
-55 ---- + 150
-55 ---- + 150
V
A
ns
pF
/W
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
N OTE:1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2.Meas ured at 1.0MH Z and applied rev erse v oltage of 4.0V D C .
3.Them al resis tance f rom junc tion to am bient.
www.galaxycn.com
Document Number 0261030
BL
GALAXY ELECTRICAL
1.

30DF1Z相似产品对比

30DF1Z 30DF1 30DF2 30DF2Z
描述 1.66 A, 100 V, SILICON, RECTIFIER DIODE 1.66 A, 100 V, SILICON, RECTIFIER DIODE 3 A, SILICON, RECTIFIER DIODE 1.66 A, 100 V, SILICON, RECTIFIER DIODE

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