NCV8405A, NCV8405B
Self-Protected Low Side
Driver with Temperature
and Current Limit
NCV8405A/B is a three terminal protected Low−Side Smart
Discrete device. The protection features include overcurrent,
overtemperature, ESD and integrated Drain−to−Gate clamping for
overvoltage protection. This device is suitable for harsh automotive
environments.
Features
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V
(BR)DSS
(Clamped)
42 V
R
DS(ON)
TYP
90 mW @ 10 V
I
D
MAX
6.0 A*
•
•
•
•
•
•
•
•
Short−Circuit Protection
Thermal Shutdown with Automatic Restart
Overvoltage Protection
Integrated Clamp for Inductive Switching
ESD Protection
dV/dt Robustness
Analog Drive Capability (Logic Level Input)
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
*Max current limit value is dependent on input
condition.
Drain
Overvoltage
Protection
Gate
Input
ESD Protection
Temperature
Limit
Current
Limit
Current
Sense
Source
•
Switch a Variety of Resistive, Inductive and Capacitive Loads
•
Can Replace Electromechanical Relays and Discrete Circuits
•
Automotive / Industrial
1
2
3
MARKING
DIAGRAM
4
4
AYW
xxxxx
G
G
1
2
3
SOURCE
GATE
DRAIN
DRAIN
SOT−223
CASE 318E
STYLE 3
4
1 2
3
DPAK
CASE 369C
YWW
xxxxxG
A
= Assembly Location
Y
= Year
W, WW = Work Week
xxxxx = 8405A or 8405B
G or
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
©
Semiconductor Components Industries, LLC, 2016
1
November, 2016 − Rev. 5
Publication Order Number:
NCV8405/D
NCV8405A, NCV8405B
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage Internally Clamped
Drain−to−Gate Voltage Internally Clamped
Gate−to−Source Voltage
Continuous Drain Current
Power Dissipation − SOT−223 Version
@ T
A
= 25°C (Note 1)
@ T
A
= 25°C (Note 2)
@ T
S
= 25°C
Power Dissipation − DPAK Version
@ T
A
= 25°C (Note 1)
@ T
A
= 25°C (Note 2)
@ T
S
= 25°C
Thermal Resistance − SOT−223 Version
Junction−to−Ambient Steady State (Note 1)
Junction−to−Ambient Steady State (Note 2)
Junction−to−Soldering Point Steady State
Thermal Resistance − DPAK Version
Junction−to−Ambient Steady State (Note 1)
Junction−to−Ambient Steady State (Note 2)
Junction−to−Soldering Point Steady State
Single Pulse Drain−to−Source Avalanche Energy
(V
DD
= 40 V, V
G
= 5.0 V, I
PK
= 2.8 A, L = 80 mH, R
G(ext)
= 25
W,
TJ = 25°C)
Load Dump Voltage
V
LD
= V
A
+ V
S
(V
GS
= 0 and 10 V, R
I
= 2.0
W,
R
L
= 6.0
W,
t
d
= 400 ms)
R
qJA
R
qJA
R
qJS
R
qJA
R
qJA
R
qJS
E
AS
V
LD
T
J
T
stg
130
72
11
60
50
3.0
275
53
−40 to 150
−55 to 150
mJ
V
°C
°C
2.0
2.5
40
°C/W
(R
G
= 1.0 MW)
Symbol
V
DSS
V
DGR
V
GS
I
D
P
D
1.0
1.7
11.4
Value
42
42
"14
Unit
V
V
V
Internally Limited
W
Operating Junction Temperature
Storage Temperature
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Surface−mounted onto min pad FR4 PCB, (2 oz. Cu, 0.06″ thick).
2. Surface−mounted onto 2″ sq. FR4 board (1″ sq., 1 oz. Cu, 0.06″ thick).
+
I
D
DRAIN
I
G
+
GATE
VDS
VGS
SOURCE
−
−
Figure 1. Voltage and Current Convention
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2
NCV8405A, NCV8405B
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(Note 3)
V
GS
= 0 V, I
D
= 10 mA, T
J
= 25°C
V
GS
= 0 V, I
D
= 10 mA, T
J
= 150°C
(Note 5)
V
GS
= 0 V, V
DS
= 32 V, T
J
= 25°C
V
GS
= 0 V, V
DS
= 32 V, T
J
= 150°C
(Note 5)
Gate Input Current
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
Gate Threshold Temperature Coefficient
Static Drain−to−Source On−Resistance
V
GS
= 10 V, I
D
= 1.4 A, T
J
= 25°C
V
GS
= 10 V, I
D
= 1.4 A, T
J
= 150°C
(Note 5)
V
GS
= 5.0 V, I
D
= 1.4 A, T
J
= 25°C
V
GS
= 5.0 V, I
D
= 1.4 A, T
J
= 150°C
(Note 5)
V
GS
= 5.0 V, I
D
= 0.5 A, T
J
= 25°C
V
GS
= 5.0 V, I
D
= 0.5 A, T
J
= 150°C
(Note 5)
Source−Drain Forward On Voltage
SWITCHING CHARACTERISTICS
(Note 5)
Turn−ON Time (10% V
IN
to 90% I
D
)
Turn−OFF Time (90% V
IN
to 10% I
D
)
Slew−Rate ON (70% V
DS
to 50% V
DS
)
Slew−Rate OFF (50% V
DS
to 70% V
DS
)
Current Limit
V
GS
= 10 V, V
DD
= 12 V
I
D
= 2.5 A, R
L
= 4.7
W
V
GS
= 10 V, V
DD
= 12 V,
R
L
= 4.7
W
t
ON
t
OFF
−dV
DS
/dt
ON
dV
DS
/dt
OFF
I
LIM
6.0
3.0
7.0
4.0
T
LIM(off)
DT
LIM(on)
T
LIM(off)
DT
LIM(on)
I
GON
I
GCL
I
GTL
150
150
20
110
1.0
0.4
V/ms
ms
V
GS
= 0 V, I
S
= 7.0 A
V
SD
V
GS
= V
DS
, I
D
= 150
mA
V
GS(th)
V
GS(th)
/T
J
R
DS(on)
1.0
1.6
4.0
90
165
105
185
105
185
1.05
100
190
120
210
120
210
V
2.0
V
−mV/°C
mW
V
DS
= 0 V, V
GS
= 5.0 V
I
GSSF
I
DSS
V
(BR)DSS
42
42
46
45
0.5
2.0
50
51
51
2.0
10
100
mA
mA
V
Test Condition
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Current
SELF PROTECTION CHARACTERISTICS
(T
J
= 25°C unless otherwise noted) (Note 4)
V
DS
= 10 V, V
GS
= 5.0 V, T
J
= 25°C
V
DS
= 10 V, V
GS
= 5.0 V, T
J
= 150°C
(Note 5)
V
DS
= 10 V, V
GS
= 10 V, T
J
= 25°C
V
DS
= 10 V, V
GS
= 10 V, T
J
= 150°C
(Note 5)
Temperature Limit (Turn−off)
Thermal Hysteresis
Temperature Limit (Turn−off)
Thermal Hysteresis
GATE INPUT CHARACTERISTICS
(Note 5)
Device ON Gate Input Current
Current Limit Gate Input Current
Thermal Limit Fault Gate Input Current
V
GS
= 5 V I
D
= 1.0 A
V
GS
= 10 V I
D
= 1.0 A
V
GS
= 5 V, V
DS
= 10 V
V
GS
= 10 V, V
DS
= 10 V
V
GS
= 5 V, V
DS
= 10 V
V
GS
= 10 V, V
DS
= 10 V
ESD ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted) (Note 5)
Electro−Static Discharge Capability
Human Body Model (HBM)
Machine Model (MM)
3. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
4. Fault conditions are viewed as beyond the normal operating range of the part.
5. Not subject to production testing.
ESD
4000
400
V
50
400
0.05
0.4
0.22
1.0
mA
mA
mA
V
GS
= 5.0 V (Note 5)
V
GS
= 5.0 V
V
GS
= 10 V (Note 5)
V
GS
= 10 V
9.0
5.0
10.5
7.5
180
15
165
15
185
11
8.0
13
10
200
°C
A
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3
NCV8405A, NCV8405B
TYPICAL PERFORMANCE CURVES
10
1000
E
max
(mJ)
I
L(max)
(A)
T
Jstart
= 25°C
T
Jstart
= 25°C
100
T
Jstart
= 150°C
T
Jstart
= 150°C
1
10
L (mH)
100
10
10
L (mH)
100
Figure 2. Single Pulse Maximum Switch−off
Current vs. Load Inductance
100
1000
Figure 3. Single Pulse Maximum Switching
Energy vs. Load Inductance
T
Jstart
= 25°C
E
max
(mJ)
I
L(max)
(A)
10
T
Jstart
= 25°C
100
T
Jstart
= 150°C
T
Jstart
= 150°C
1
1
TIME IN CLAMP (ms)
10
10
1
TIME IN CLAMP (ms)
10
Figure 4. Single Pulse Maximum Inductive
Switch−off Current vs. Time in Clamp
Figure 5. Single Pulse Maximum Inductive
Switching Energy vs. Time in Clamp
12
9V
14
8V
10 V
8
100°C
4V
5V
6
4
2
0
0
1
2
V
DS
(V)
3
V
GS
= 2.5 V
4
5
2
0
1
2
3
V
GS
(V)
4
5
3V
I
D
(A)
6
4
150°C
12 7 V
10 6 V
I
D
(A)
8
T
A
= 25°C
10
V
DS
= 10 V
−40°C
25°C
Figure 6. Output Characteristics
Figure 7. Transfer Characteristics
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NCV8405A, NCV8405B
TYPICAL PERFORMANCE CURVES
300
210
250
R
DS(on)
(mW)
150°C, I
D
= 1.4 A
190
170
200
150°C, I
D
= 0.5 A
R
DS(on)
(mW)
150
130
110
90
25°C, I
D
= 1.4 A
−40°C, I
D
= 1.4 A
50 −40°C, I
D
= 0.5 A
3
4
5
6
7
V
GS
(V)
25°C, I
D
= 0.5 A
8
9
10
70
50
0.5
1
−40°C, V
GS
= 5 V
−40°C, V
GS
= 10 V
1.5
2
2.5
3
I
D
(A)
3.5
4
4.5
5
150°C, V
GS
= 10 V
100°C, V
GS
= 5 V
100°C, V
GS
= 10 V
25°C, V
GS
= 5 V
25°C, V
GS
= 10 V
150°C, V
GS
= 10 V
150
100°C, I
D
= 1.4 A
100°C, I
D
= 0.5 A
100
Figure 8. R
DS(on)
vs. Gate−Source Voltage
R
DS(on)
(VGS = 5 V, TJ = 25°C)(NORMALIZED)
2.0
I
D
= 1.4 A
13
15
Figure 9. R
DS(on)
vs. Drain Current
V
DS
= 10 V
−40°C
1.75
1.5
V
GS
= 5 V
I
LIM
(A)
11
9
25°C
1.25
1.0
100°C
7
150°C
5
3
V
GS
= 10 V
0.75
0.5
−40
−20
0
20
40
60
T (°C)
80
100 120
140
5
6
7
V
GS
(V)
8
9
10
Figure 10. Normalized R
DS(on)
vs. Temperature
Figure 11. Current Limit vs. Gate−Source
Voltage
10
V
GS
= 0 V
14
1
12
10
8
V
GS
= 5 V
6
V
DS
= 10 V
4
−40 −20 0
0.001
10
0.01
V
GS
= 10 V
I
DSS
(mA)
I
LIM
(A)
0.1
100°C
−40°C
150°C
25°C
20
40
60
T
J
(°C)
80
100 120 140 160
15
20
25
V
DS
(V)
30
35
40
Figure 12. Current Limit vs. Junction
Temperature
Figure 13. Drain−to−Source Leakage Current
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