CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the recommended operating conditions of this specification is not implied.
NOTES:
3. The HIP2101 is capable of derated operation at supply voltages exceeding 14V. Figure 16 shows the high-side voltage derating curve for this
mode of operation.
4. All voltages referenced to V
SS
unless otherwise specified.
5.
θ
JA
is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
6.
θ
JA
is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features.
θ
JC,
the
“case temp” is measured at the center of the exposed metal pad on the package underside. See Tech Brief TB379.
Electrical Specifications
V
DD
= V
HB
= 12V, V
SS
= V
HS
= 0V, No Load on LO or HO, Unless Otherwise Specified
T
J
= 25°C
T
J
= -40°C TO
125°C
MAX
MIN
MAX
UNITS
PARAMETERS
SUPPLY CURRENTS
V
DD
Quiescent Current
V
DD
Operating Current
Total HB Quiescent Current
Total HB Operating Current
HB to V
SS
Current, Quiescent
HB to V
SS
Current, Operating
INPUT PINS
Low Level Input Voltage Threshold
High Level Input Voltage Threshold
Input Pulldown Resistance
UNDER VOLTAGE PROTECTION
V
DD
Rising Threshold
V
DD
Threshold Hysteresis
HB Rising Threshold
HB Threshold Hysteresis
SYMBOL
TEST CONDITIONS
MIN
TYP
I
DD
I
DDO
I
HB
I
HBO
I
HBS
I
HBSO
LI = HI = 0V
f = 500kHz
LI = HI = 0V
f = 500kHz
V
HS
= V
HB
= 114V
f = 500kHz
-
-
-
-
-
-
0.3
1.7
0.1
1.5
0.05
0.7
0.45
3.0
0.15
2.5
1.5
-
-
-
-
-
-
-
0.6
3.4
0.2
3
10
-
mA
mA
mA
mA
µA
mA
V
IL
V
IH
R
I
0.8
-
-
1.65
1.65
200
-
2.2
-
0.8
-
100
-
2.2
500
V
V
kΩ
V
DDR
V
DDH
V
HBR
V
HBH
7
-
6.5
-
7.3
0.5
6.9
0.4
7.8
-
7.5
-
6.5
-
6
-
8
-
8
-
V
V
V
V
4
FN9025.8
HIP2101
Electrical Specifications
V
DD
= V
HB
= 12V, V
SS
= V
HS
= 0V, No Load on LO or HO, Unless Otherwise Specified
(Continued)
T
J
= 25°C
PARAMETERS
BOOT STRAP DIODE
Low-Current Forward Voltage
High-Current Forward Voltage
Dynamic Resistance
LO GATE DRIVER
Low Level Output Voltage
High Level Output Voltage
Peak Pullup Current
Peak Pulldown Current
HO GATE DRIVER
Low Level Output Voltage
High Level Output Voltage
Peak Pullup Current
Peak Pulldown Current
V
OLH
V
OHH
I
OHH
I
OLH
I
HO
= 100mA
I
HO
= -100mA, V
OHH
= V
HB
-V
HO
V
HO
= 0V
V
HO
= 12V
-
-
-
-
0.25
0.25
2
2
0.3
0.3
-
-
-
-
-
-
0.4
0.4
-
-
V
V
A
A
V
OLL
V
OHL
I
OHL
I
OLL
I
LO
= 100mA
I
LO
= -100mA, V
OHL
= V
DD
-V
LO
V
LO
= 0V
V
LO
= 12V
-
-
-
-
0.25
0.25
2
2
0.3
0.3
-
-
-
-
-
-
0.4
0.4
-
-
V
V
A
A
V
DL
V
DH
R
D
I
VDD-HB
= 100µA
I
VDD-HB
= 100mA
I
VDD-HB
= 100mA
-
-
-
0.45
0.7
0.8
0.70
0.92
1
-
-
-
0.7
1
1.5
V
V
Ω
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
T
J
= -40°C TO
125°C
MIN
MAX
UNITS
Switching Specifications
V
DD
= V
HB
= 12V, V
SS
= V
HS
= 0V, No Load on LO or HO, Unless Otherwise Specified
TEST
CONDITIONS
T
J
= 25°C
MIN
-
-
-
-
-
-
C
L
= 1000pF
C
L
= 0.1µF
C
L
= IRFR120
C
L
= IRFR120
-
-
-
-
-
-
TYP
25
25
25
25
2
2
10
0.5
20
10
-
10
MAX
43
43
43
43
13
13
-
0.6
-
-
-
-
T
J
= -40°C
TO 125°C
MIN
-
-
-
-
-
-
-
-
-
-
-
-
MAX
56
56
56
56
16
16
-
0.8
-
-
50
-
UNITS
ns
ns
ns
ns
ns
ns
ns
us
ns
ns
ns
ns
PARAMETERS
Lower Turn-Off Propagation Delay (LI Falling to LO Falling)
Upper Turn-Off Propagation Delay (HI Falling to HO Falling)
Lower Turn-On Propagation Delay (LI Rising to LO Rising)
Upper Turn-On Propagation Delay (HI Rising to HO Rising)
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
