DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5787
NPN SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW NOISE
3-PIN LEAD-LESS MINIMOLD
FEATURES
• Ideal for 3 GHz or higher OSC applications
• Low noise, high gain
f
T
= 20 GHz TYP.,
S
21e
2
= 13 dB TYP. @ V
CE
= 1 V, I
C
= 20 mA, f = 2 GHz
NF = 1.4 dB TYP. @ V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz, Z
S
= Z
opt
• UHS0 technology (f
T
= 25 GHz) adopted
• High reliability through use of gold electrodes
• 3-pin lead-less minimold package (1005 PKG)
ORDERING INFORMATION
Part Number
2SC5787
2SC5787-T3
Quantity
50 pcs (Non reel)
10 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 2 (Base) face the perforation side of the tape
Remark
To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
9.0
3.0
1.5
35
105
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
T
j
T
stg
2
Note
Mounted on 1.08 cm
×
1.0 mm (t) glass epoxy PCB
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10070EJ01V0DS (1st edition)
(Previous No. P15786EJ1V0DS00)
Date Published January 2002 CP(K)
Printed in Japan
The mark
•
shows major revised points.
©
NEC Corporation 2001
©
NEC Compound Semiconductor Devices 2002
2SC5787
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
°
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
f
T
S
21e
2
NF
C
re
Note 2
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
I
CBO
I
EBO
h
FE
Note 1
V
CB
= 5 V, I
E
= 0 mA
V
EB
= 1 V, I
C
= 0 mA
V
CE
= 1 V, I
C
= 5 mA
–
–
50
–
–
–
100
100
100
nA
nA
–
V
CE
= 1 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz,
Z
S
= Z
opt
V
CB
= 0.5 V, I
E
= 0 mA, f = 1 MHz
17
11
–
–
20
13
1.4
0.22
–
–
2.5
0.30
GHz
dB
dB
pF
Notes 1.
Pulse measurement: PW
≤
350
µ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance when the emitter grounded
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
FB
B7
50 to 100
2
Data Sheet PU10070EJ01V0DS
2SC5787
TYPICAL CHARACTERISTICS (Unless otherwise specified, T
A
= +25°C)
°
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Total Power Dissipation P
tot
(mW)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Reverse Transfer Capacitance C
re
(pF)
150
125
105
0.5
f = 1 MHz
0.4
Mounted on Glass Epoxy PCB
(1.08 cm
2
×
1.0 mm (t) )
100
75
50
25
0.3
0.2
0.1
0
25
50
75
100
125
150
0
2
4
6
8
10
Ambient Temperature T
A
(˚C)
Collector to Base Voltage V
CB
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.1
0.01
0.001
V
CE
= 1 V
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.1
0.01
0.001
V
CE
= 2 V
Collector Current I
C
(mA)
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage V
BE
(V)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
40
500
µ
A 450
µ
A
Collector Current I
C
(mA)
400
µ
A
350
µ
A
300
µ
A
250
µ
A
30
20
200
µ
A
150
µ
A
10
100
µ
A
I
B
= 50
µ
A
0
1
2
3
4
5
Collector to Emitter Voltage V
CE
(V)
Data Sheet PU10070EJ01V0DS
3
2SC5787
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
28
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
28
Gain Bandwidth Product f
T
(GHz)
24
20
16
12
8
4
0
1
Gain Bandwidth Product f
T
(GHz)
V
CE
= 1 V
f = 2 GHz
24
20
16
12
8
4
0
1
V
CE
= 2 V
f = 2 GHz
10
Collector Current I
C
(mA)
100
10
Collector Current I
C
(mA)
100
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
40
35
30
25
20
15
10
5
0
0.1
1
Frequency f (GHz)
10
|S
21e
|
2
MSG
MAG
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
40
35
30
25
20
15
10
5
0
0.1
1
Frequency f (GHz)
10
|S
21e
|
2
MSG
MAG
V
CE
= 2 V
I
C
= 20 mA
V
CE
= 1 V
I
C
= 20 mA
Data Sheet PU10070EJ01V0DS
5
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