FIFO, 1KX18, 80ns, Asynchronous, MOS, PQCC68, PLASTIC, LCC-68
| 参数名称 | 属性值 |
| 零件包装代码 | LCC |
| 包装说明 | QCCJ, |
| 针数 | 68 |
| Reach Compliance Code | unknow |
| ECCN代码 | EAR99 |
| 最长访问时间 | 80 ns |
| 其他特性 | BYPASS XCVR |
| 周期时间 | 100 ns |
| JESD-30 代码 | S-PQCC-J68 |
| JESD-609代码 | e0 |
| 内存密度 | 18432 bi |
| 内存宽度 | 18 |
| 功能数量 | 1 |
| 端子数量 | 68 |
| 字数 | 1024 words |
| 字数代码 | 1000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 1KX18 |
| 输出特性 | 3-STATE |
| 可输出 | NO |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | QCCJ |
| 封装形状 | SQUARE |
| 封装形式 | CHIP CARRIER |
| 并行/串行 | PARALLEL |
| 认证状态 | Not Qualified |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | YES |
| 技术 | MOS |
| 温度等级 | COMMERCIAL |
| 端子面层 | TIN LEAD |
| 端子形式 | J BEND |
| 端子位置 | QUAD |
| Base Number Matches | 1 |
| IDT72511L80J8 | IDT72521L80J8 | IDT72511L40J8 | IDT72521L40J8 | |
|---|---|---|---|---|
| 描述 | FIFO, 1KX18, 80ns, Asynchronous, MOS, PQCC68, PLASTIC, LCC-68 | FIFO, 2KX18, 80ns, Asynchronous, MOS, PQCC68, PLASTIC, LCC-68 | FIFO, 1KX18, 40ns, Asynchronous, MOS, PQCC68, PLASTIC, LCC-68 | FIFO, 2KX18, 40ns, Asynchronous, MOS, PQCC68, PLASTIC, LCC-68 |
| 零件包装代码 | LCC | LCC | LCC | LCC |
| 包装说明 | QCCJ, | QCCJ, | QCCJ, | QCCJ, |
| 针数 | 68 | 68 | 68 | 68 |
| Reach Compliance Code | unknow | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
| 最长访问时间 | 80 ns | 80 ns | 40 ns | 40 ns |
| 其他特性 | BYPASS XCVR | BYPASS XCVR | BYPASS XCVR | BYPASS XCVR |
| 周期时间 | 100 ns | 100 ns | 50 ns | 50 ns |
| JESD-30 代码 | S-PQCC-J68 | S-PQCC-J68 | S-PQCC-J68 | S-PQCC-J68 |
| JESD-609代码 | e0 | e0 | e0 | e0 |
| 内存密度 | 18432 bi | 36864 bit | 18432 bit | 36864 bit |
| 内存宽度 | 18 | 18 | 18 | 18 |
| 功能数量 | 1 | 1 | 1 | 1 |
| 端子数量 | 68 | 68 | 68 | 68 |
| 字数 | 1024 words | 2048 words | 1024 words | 2048 words |
| 字数代码 | 1000 | 2000 | 1000 | 2000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C |
| 组织 | 1KX18 | 2KX18 | 1KX18 | 2KX18 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 可输出 | NO | NO | NO | NO |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | QCCJ | QCCJ | QCCJ | QCCJ |
| 封装形状 | SQUARE | SQUARE | SQUARE | SQUARE |
| 封装形式 | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | YES | YES | YES | YES |
| 技术 | MOS | MOS | MOS | MOS |
| 温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| 端子面层 | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD |
| 端子形式 | J BEND | J BEND | J BEND | J BEND |
| 端子位置 | QUAD | QUAD | QUAD | QUAD |
| 厂商名称 | - | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) |
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