d. Maximum under Steady State conditions is 95 °C/W.
e. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in
manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder
interconnection.
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 65298
S09-1920-Rev. A, 28-Sep-09
www.vishay.com
1
New Product
Si5414DC
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 7.9 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 7.9 A, V
GS
= 0 V
0.8
20
10
8
12
T
C
= 25 °C
5.2
30
1.2
40
20
A
V
ns
nC
ns
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 10 V, R
L
= 1.3
Ω
I
D
≅
7.9 A, V
GEN
= 10 V, R
g
= 1
Ω
V
DD
= 10 V, R
L
= 1.3
Ω
I
D
≅
7.9 A, V
GEN
= 4.5 V, R
g
= 1
Ω
f = 1 MHz
0.46
V
DS
= 10 V, V
GS
= 10 V, I
D
= 9.9 A
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 9.9 A
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 4.5 V
V
GS
=
4.5 V, I
D
= 9.9 A
V
GS
=
2.5 V, I
D
= 8.7 A
V
DS
= 10 V, I
D
= 9.9 A
20
0.014
0.017
41
1500
280
125
27
12.5
2.8
2.1
2.3
14
12
36
14
10
10
25
10
4.6
25
20
55
25
15
15
40
15
ns
Ω
41
19
nC
pF
0.017
0.022
0.6
20
19
-4
1.5
± 100
1
5
V
mV/°C
V
nA
µA
A
Ω
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 65298
S09-1920-Rev. A, 28-Sep-09
New Product
Si5414DC
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
30
V
GS
= 5
V
thru 2.5
V
24
I
D
- Drain Current (A)
I
D
- Drain Current (A)
8
10
18
6
12
V
GS
= 2
V
4
T
C
= 25 °C
2
T
C
= 125 °C
6
V
GS
= 1.5
V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.0
T
C
= - 55 °C
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.030
2000
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.024
V
GS
= 2.5
V
0.018
V
GS
= 4.5
V
0.012
C - Capacitance (pF)
1600
C
iss
1200
800
C
oss
400
C
rss
0.006
0.000
0
6
12
18
24
30
0
0
5
10
15
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current
10
I
D
= 9.9 A
8
V
DS
= 5
V
6
V
DS
= 16
V
V
DS
= 10
V
R
DS(on)
- On-Resistance
1.4
1.6
Capacitance
V
GS
- Gate-to-Source
Voltage
(V)
V
GS
= 4.5
V;
I
D
= 12 A
(Normalized)
1.2
4
1.0
2
0.8
0
0
6
12
18
24
30
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 65298
S09-1920-Rev. A, 28-Sep-09
www.vishay.com
3
New Product
Si5414DC
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
0.04
I
D
= 9.9 A
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
0.03
T
J
= 125 °C
0.02
T
J
= 25 °C
0.01
10
T
J
= 150 °C
1
T
J
= 25 °C
0.1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1
2
3
4
5
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
1.4
1.3
1.2
I
D
= 250
µA
Po
w
er (
W
)
40
50
On-Resistance vs. Gate-to-Source Voltage
V
GS(th)
(V)
1.1
1.0
0.9
0.8
30
20
10
0.7
0.6
- 50
0
10
-3
- 25
0
25
50
75
100
125
150
10
-2
10
-1
1
Time (s)
10
100
600
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
Single Pulse Power
10
I
D
- Drain Current (A)
1 ms
1
10 ms
100 ms
1s
10 s
DC
BVDSS Limited
0.1
T
A
= 25 °C
Single Pulse
0.01
0.01
0.1
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 65298
S09-1920-Rev. A, 28-Sep-09
New Product
Si5414DC
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
20
8
16
6
I
D
- Drain Current (A)
12
Power (W)
4
8
Package Limited
2
4
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
射频识别(Radio Frequency Identification，RFID)技术是一种利用无线射频通信实现的非接触式自动识别技术，与目前广泛采用的条形码技术相比，RFID具有容量大、识别距离远、穿透能力强、抗污性强等特点。RFID技术已经发展得比较成熟并获得了大规模商用，但超高频RFID技术相对滞后。本文分析了射频芯片nRF9E5的功能特性，并将其用于RFID系统中，设计了一套有源超高频(...[详细]
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