These devices are designed primarily for high−efficiency UHF and
VHF detector applications. They are readily adaptable to many other
fast switching RF and digital applications. They are supplied in an
inexpensive plastic package for low−cost, high−volume consumer
and industrial/commercial requirements. They are also available in a
Surface Mount package.
Features
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Extremely Low Minority Carrier Lifetime
−
15 ps (Typ)
Very Low Capacitance
−
1.0 pF @ V
R
= 20 V
High Reverse Voltage
−
to 70 V
Low Reverse Leakage
−
200 nA (Max)
AEC Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Power Dissipation
@ T
A
= 25C
MBD701
MMBD701L, SMMBD701L
Derate above 25C
MBD701
MMBD701L, SMMBD701L
Operating Junction Temperature
Range
Storage Temperature Range
T
J
T
stg
Symbol
V
R
P
F
280
200
2.8
2.0
−55
to +125
−55
to +150
Value
70
Unit
V
mW
TO−92 2−Lead
CASE 182
STYLE 1
TO−92
2
CATHODE
1
ANODE
SOT−23 (TO−236)
CASE 318
STYLE 8
SOT−23
3
CATHODE
1
ANODE
MARKING DIAGRAMS
MBD
701
AYWW
G
G
1
TO−92
SOT−23
5H M
G
G
mW/C
C
C
A
= Assembly Location
Y
= Year
WW = Work Week
5H = Device Code (SOT−23)
M
= Date Code*
= Pb−Free Package
G
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2011
November, 2011
−
Rev. 6
1
Publication Order Number:
MBD701/D
MBD701, MMBD701L, SMMBD701L
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(I
R
= 10
mAdc)
Total Capacitance
(V
R
= 20 V, f = 1.0 MHz) Figure 1
Reverse Leakage
(V
R
= 35 V) Figure 3
Forward Voltage
(I
F
= 1.0 mAdc) Figure 4
Forward Voltage
(I
F
= 10 mAdc) Figure 4
Symbol
V
(BR)R
C
T
I
R
V
F
V
F
Min
70
−
−
−
−
Typ
−
0.5
9.0
0.42
0.7
Max
−
1.0
200
0.5
1.0
Unit
V
pF
nAdc
Vdc
Vdc
ORDERING INFORMATION
Device
MBD701
MBD701G
MMBD701LT1
MMBD701LT1G
SMMBD701LT1G
MMBD701LT3
MMBD701LT3G
Package
TO−92
TO−92
(Pb−Free)
SOT−23
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
SOT−23
(Pb−Free)
Shipping
†
1,000 Units / Bulk
1,000 Units / Bulk
3,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
10,000 / Tape & Reel
10,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
MBD701, MMBD701L, SMMBD701L
TYPICAL ELECTRICAL CHARACTERISTICS
2.0
t
, MINORITY CARRIER LIFETIME (ps)
f = 1.0 MHz
C T, TOTAL CAPACITANCE (pF)
1.6
500
400
KRAKAUER METHOD
300
1.2
0.8
200
0.4
100
0
0
5.0
10
15
20
25
30
35
V
R
, REVERSE VOLTAGE (VOLTS)
40
45
50
0
0
10
20
30
40
50
60
70
I
F
, FORWARD CURRENT (mA)
80
90
100
Figure 1. Total Capacitance
Figure 2. Minority Carrier Lifetime
10
IF, FORWARD CURRENT (mA)
100
IR, REVERSE LEAKAGE (
m
A)
1.0
T
A
= 100C
10
T
A
= 85C
T
A
= - 40C
T
A
= 75C
0.1
1.0
T
A
= 25C
0.01
T
A
= 25C
0.001
0.1
0
10
20
30
V
R
, REVERSE VOLTAGE (VOLTS)
40
50
0
0.2
0.4
0.8
1.2
V
F
, FORWARD VOLTAGE (VOLTS)
1.6
2.0
Figure 3. Reverse Leakage
Figure 4. Forward Voltage
I
F(PEAK)
CAPACITIVE
CONDUCTION
I
R(PEAK)
FORWARD
CONDUCTION
STORAGE
CONDUCTION
SINUSOIDAL
GENERATOR
BALLAST
NETWORK
(PADS)
PADS
DUT
SAMPLING
OSCILLOSCOPE
(50
W
INPUT)
Figure 5. Krakauer Method of Measuring Lifetime
http://onsemi.com
3
MBD701, MMBD701L, SMMBD701L
PACKAGE DIMENSIONS
TO−92 (TO−226AC)
CASE 182−06
ISSUE L
A
B
SEATING
PLANE
R
L
K
D
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND ZONE R IS
UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.050 BSC
0.100 BSC
0.014
0.016
0.500
---
0.250
---
0.080
0.105
---
0.050
0.115
---
0.135
---
MILLIMETERS
MIN
MAX
4.45
5.21
4.32
5.33
3.18
4.19
0.407
0.533
1.27 BSC
2.54 BSC
0.36
0.41
12.70
---
6.35
---
2.03
2.66
---
1.27
2.93
---
3.43
---
P
D
X X
G
H
V
C
N
SECTION X−X
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
1
2
N
http://onsemi.com
4
ÉÉ
ÉÉ
STYLE 1:
PIN 1. ANODE
2. CATHODE
MBD701, MMBD701L, SMMBD701L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
D
SEE VIEW C
3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
H
E
q
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10
E
1
2
HE
c
e
b
q
0.25
A
A1
L
L1
VIEW C
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
SOLDERING FOOTPRINT
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm
inches
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any
liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over
time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under
its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body,
or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of
personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.
SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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For additional information, please contact your loca
中风发生时，一切都是以秒来计算的。延误治疗可能导致大脑重大损伤。伦敦大学医学院的一位博士Alistair McEwan已经获得行为医学研究所(Action Medical Research)的同意，为急救人员开发一种无线诊断系统来减少时间延误。感谢抗血栓药物，一些病人在病情发作的三个小时之内可以完全恢复。但出血也会导致中风。医生在治疗之前需要确定发病原因，因为不适当的服用抗血栓药物会加重损害。...[详细]
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