AUTOMOTIVE GRADE
AUIRFR9024N
AUIRFU9024N
V
DSS
R
DS(on)
I
D
HEXFET
®
Power MOSFET
-55V
max.
0.175
-11A
Features
Advanced Planar Technology
Low On-Resistance
P-Channel
Dynamic dv/dt Rating
150°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
D
D
Description
Specifically designed for Automotive applications, this Cellular
design of HEXFET
®
Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications.
Base part number
AUIRFU9024N
AUIRFR9024N
Package Type
I-Pak
D-Pak
G
S
G
S
D
D-Pak
AUIRFR9024N
I-Pak
AUIRFU9024N
G
Gate
D
Drain
S
Source
Standard Pack
Form
Quantity
Tube
75
Tube
75
Tape and Reel Left
3000
Orderable Part Number
AUIRFU9024N
AUIRFR9024N
AUIRFR9024NTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
-11
-8
-44
38
0.30
± 20
62
-6.6
3.8
-10
-55 to + 150
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
R
JC
R
JA
R
JA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mount)
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
3.3
50
110
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
1
2015-10-20
Static @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
V
(BR)DSS
/T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
AUIRFR/U9024N
Min. Typ. Max. Units
Conditions
-55
––– –––
V V
GS
= 0V, I
D
= -250µA
––– -0.05 ––– V/°C Reference to 25°C, I
D
= -1mA
––– ––– 0.175
V
GS
= -10V, I
D
= -6.6A
-2.0
––– -4.0
V V
DS
= V
GS
, I
D
= -250µA
2.5
––– –––
S V
DS
= -25V, I
D
= -7.2A
––– ––– -25
V
DS
= -55 V, V
GS
= 0V
µA
––– ––– -250
V
DS
= -44V,V
GS
= 0V,T
J
=150°C
––– ––– -100
V
GS
= -20V
nA
––– ––– 100
V
GS
= 20V
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
13
55
23
37
4.5
7.5
350
170
92
19
5.1
10
–––
–––
–––
–––
–––
–––
–––
–––
–––
I
D
= -7.2A
nC
V
DS
= -44V
V
GS
= -10V, See Fig 6 and 13
V
DD
= -28V
I
D
= -7.2A
ns
R
G
= 24
R
D
= 3.7See Fig 10
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
V
GS
= 0V
pF
V
DS
= -25V
ƒ = 1.0MHz, See Fig. 5
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V T
J
= 25°C,I
S
= -7.2A,V
GS
= 0V
ns T
J
= 25°C ,I
F
= -7.2A
nC di/dt = 100A/µs
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Diode Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
t
on
Forward Turn-On Time
Typ. Max. Units
–––
–––
–––
47
84
-11
-44
-1.6
71
130
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Starting T
J
= 25°C, L = 2.8mH, R
G
= 25, I
AS
= -6.6A. (See Fig.12)
I
SD
-6.6A,
di/dt
-240A/µs,
V
DD
V
(BR)DSS
, T
J
150°C.
Pulse width
300µs;
duty cycle
2%.
This is applied for I-PAK, L
S
of D-PAK is measured between lead and center of die contact .
Uses
IRF9Z24N data and test conditions.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
2
2015-10-20
AUIRFR/U9024N
Fig. 1
Typical Output Characteristics
Fig. 2
Typical Output Characteristics
Fig. 3
Typical Transfer Characteristics
Fig. 4
Normalized On-Resistance
vs. Temperature
2015-10-20
3
AUIRFR/U9024N
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
Fig. 7
Typical Source-to-Drain Diode
Forward Voltage
4
Fig 8.
Maximum Safe Operating Area
2015-10-20
AUIRFR/U9024N
Fig 10a.
Switching Time Test Circuit
Fig 9.
Maximum Drain Current vs. Case Temperature
Fig 10b.
Switching Time Waveforms
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
2015-10-20
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
