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PN200A / MMBT200 — PNP General-Purpose Amplifier
January 2014
PN200A / MMBT200
PNP General-Purpose Amplifier
Description
This device is designed for general-purpose amplifier
applications at collector currents to 300 mA. Sourced
from Process 68.
C
E
TO-92
EBC
SOT-23
B
Figure 1. PN200A Device Package
Figure 2. MMBT200 Device Package
Ordering Information
Part Number
PN200A
MMBT200
Marking
PN200A
N2
Package
TO-92 3L
SOT-23 3L
Packing Method
Bulk
Tape and Reel
Absolute Maximum Ratings
(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J,
T
STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Parameter
Value
-45
-60
-6
-500
-55 to +150
Unit
V
V
V
mA
°C
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
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