MGP15N35CL,
MGB15N35CL
Preferred Device
Ignition IGBT
15 Amps, 350 Volts
N−Channel TO−220 and D
2
PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over−Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
•
Ideal for Coil−On−Plug, IGBT−On−Coil, or Distributorless Ignition
System Applications
•
High Pulsed Current Capability up to 50 A
•
Gate−Emitter ESD Protection
•
Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
•
Integrated ESD Diode Protection
•
Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
•
Low Saturation Voltage
•
Optional Gate Resistor (R
G
)
MAXIMUM RATINGS
(−55°C
≤
T
J
≤
175°C unless otherwise noted)
Rating
Collector−Emitter Voltage
Collector−Gate Voltage
Gate−Emitter Voltage
Collector Current−Continuous
@ T
C
= 25°C
−
Pulsed
ESD (Human Body Model)
R = 1500
Ω,
C = 100 pF
ESD (Machine Model) R = 0
Ω,
C = 200 pF
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Temperature Range
Symbol
V
CES
V
CER
V
GE
I
C
ESD
8.0
ESD
P
D
T
J
, T
stg
800
150
1.0
−55
to
175
V
Watts
W/°C
°C
G15N35CL
YWW
1
Gate
2
Collector
3
Emitter
G15N35CL
YWW
1
Gate
3
Emitter
Value
380
380
22
15
50
Unit
V
DC
V
DC
V
DC
A
DC
A
AC
kV
1
2
3
TO−220AB
CASE 221A
STYLE 9
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15 AMPERES
350 VOLTS (Clamped)
V
CE(on)
@ 10 A = 1.8 V Max
N−Channel
C
G
R
GE
4
R
G
E
4
1
2
3
D
2
PAK
CASE 418B
STYLE 4
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Collector
4
Collector
2
Collector
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE
CHARACTERISTICS
(−55°C
≤
T
J
≤
175°C)
Characteristic
Single Pulse Collector−to−Emitter Avalanche
Energy
V
CC
= 50 V, V
GE
= 5.0 V, Pk I
L
= 17.4 A, L
= 2.0 mH, Starting T
J
= 25°C
V
CC
= 50 V, V
GE
= 5.0 V, Pk I
L
= 14.2 A, L
= 2.0 mH, Starting T
J
= 150°C
Reverse Avalanche Energy
V
CC
= 100 V, V
GE
= 20 V, L = 3.0 mH,
Pk I
L
= 25.8 A, Starting T
J
= 25°C
Symbol
E
AS
300
200
E
AS(R)
mJ
1000
Value
Unit
mJ
G15N35CL = Device Code
Y
= Year
WW
= Work Week
ORDERING INFORMATION
Device
MGP15N35CL
MGB15N35CLT4
Package
TO−220
D2PAK
Shipping
50 Units/Rail
800 Tape & Reel
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2006
July, 2006
−
Rev. 5
1
Publication Order Number:
MGP15N35CL/D
MGP15N35CL, MGB15N35CL
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
TO−220
D
2
PAK (Note 1)
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
Symbol
R
θJC
R
θJA
R
θJA
T
L
Value
1.0
62.5
50
275
°C
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Clamp Voltage
BV
CES
I
C
= 2.0 mA
I
C
= 10 mA
Zero Gate Voltage Collector Current
I
CES
T
J
=
−40°C
to
150°C
T
J
=
−40°C
to
150°C
T
J
= 25°C
T
J
= 150°C
T
J
=
−40°C
T
J
= 25°C
T
J
= 150°C
T
J
=
−40°C
Reverse Collector−Emitter Clamp Voltage
B
VCES(R)
I
C
=
−75
mA
T
J
= 25°C
T
J
= 150°C
T
J
=
−40°C
Gate−Emitter Clamp Voltage
Gate−Emitter Leakage Current
Gate Resistor (Optional)
Gate Emitter Resistor
BV
GES
I
GES
R
G
R
GE
I
G
= 5.0 mA
V
GE
= 10 V
−
−
T
J
=
−40°C
to
150°C
T
J
=
−40°C
to
150°C
T
J
=
−40°C
to
150°C
T
J
=
−40°C
to
150°C
320
330
−
−
−
−
−
−
25
25
25
17
384
−
10
350
360
1.5
10
0.7
0.35
8.0
0.05
33
36
30
20
600
70
16
380
380
20
40*
1.5
1.0
15*
0.5
50
50
50
22
1000
−
26
V
DC
μA
DC
Ω
V
DC
V
CE
= 300 V,
V
GE
= 0 V
μA
DC
Reverse Collector−Emitter Leakage Current
I
ECS
mA
V
CE
=
−24
V
V
DC
kΩ
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
V
GE(th)
I
C
= 1.0 mA,
V
GE
= V
CE
T
J
= 25°C
T
J
= 150°C
T
J
=
−40°C
−
1.4
0.75
1.6
−
1.7
1.1
1.9
4.4
2.0
1.4
2.1*
−
mV/°C
V
DC
Threshold Temperature Coefficient
−
−
(Negative)
1. When surface mounted to an FR4 board using the minimum recommended pad size.
2. Pulse Test: Pulse Width
v
300
μS,
Duty Cycle
v
2%.
*Maximum Value of Characteristic across Temperature Range.
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2
MGP15N35CL, MGB15N35CL
ELECTRICAL CHARACTERISTICS
(continued)
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
ON CHARACTERISTICS (continued)
(Note 3)
Collector−to−Emitter On−Voltage
V
CE(on)
I
C
= 6.0 A,
V
GE
= 4.0 V
T
J
= 25°C
T
J
= 150°C
T
J
=
−40°C
T
J
= 25°C
T
J
= 150°C
T
J
=
−40°C
T
J
= 25°C
T
J
= 150°C
T
J
=
−40°C
T
J
= 25°C
T
J
= 150°C
T
J
=
−40°C
T
J
= 25°C
T
J
= 150°C
T
J
=
−40°C
T
J
= 150°C
T
J
=
−40°C
to
150°C
1.0
0.9
1.1
1.3
1.2
1.3
1.6
1.7
1.6
1.9
2.1
1.85
2.1
2.5
2.0
−
8.0
1.3
1.2
1.4
1.6
1.5
1.6
1.95
2.0
1.9
2.2
2.4
2.15
2.5
2.9
2.4
1.5
15
1.6
1.5
1.7*
1.9
1.8
1.9*
2.25
2.3*
2.2
2.5
2.7*
2.45
2.9
3.3*
2.8
1.8
25
V
DC
Mhos
V
DC
I
C
= 10 A,
V
GE
= 4.0 V
I
C
= 15 A,
V
GE
= 4.0 V
I
C
= 20 A,
V
GE
= 4.0 V
I
C
= 25 A,
V
GE
= 4.0 V
Collector−to−Emitter On−Voltage
Forward Transconductance
V
CE(on)
gfs
I
C
= 10 A, V
GE
= 4.5 V
V
CE
= 5.0 V, I
C
= 6.0 A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
C
ISS
C
OSS
C
RSS
−
V
CC
= 25 V, V
GE
= 0 V
f = 1.0 MHz
T
J
=
−40°C
to
150°C
−
−
1000
100
5.0
1300
130
8.0
pF
SWITCHING CHARACTERISTICS
(Note 3)
Turn−Off Delay Time (Inductive)
t
d(off)
t
f
t
d(off)
t
f
t
d(on)
t
r
V
CC
= 300 V, I
C
= 6.5 A
R
G
= 1.0 kΩ, L = 300
μH
V
CC
= 300 V, I
C
= 6.5 A
R
G
= 1.0 kΩ, L = 300
μH
V
CC
= 300 V, I
C
= 6.5 A
R
G
= 1.0 kΩ, R
L
= 46
Ω,
V
CC
= 300 V, I
C
= 6.5 A
R
G
= 1.0 kΩ, R
L
= 46
Ω,
V
CC
= 10 V, I
C
= 6.5 A
R
G
= 1.0 kΩ, R
L
= 1.5
Ω
V
CC
= 10 V, I
C
= 6.5 A
R
G
= 1.0 kΩ, R
L
= 1.5
Ω
T
J
= 25°C
T
J
= 150°C
T
J
= 25°C
T
J
= 150°C
T
J
= 25°C
T
J
= 150°C
T
J
= 25°C
T
J
= 150°C
T
J
= 25°C
T
J
= 150°C
T
J
= 25°C
T
J
= 150°C
−
−
−
−
−
−
−
−
−
−
−
−
4.0
4.5
7.0
10
4.0
4.5
13
16
1.0
1.0
4.5
5.0
10
10
10
15*
10
10
20
20
1.5
1.5
6.0
6.0
μSec
μSec
μSec
Fall Time (Inductive)
Turn−Off Delay Time (Resistive)
Fall Time (Resistive)
Turn−On Delay Time
Rise Time
3. Pulse Test: Pulse Width
v
300
μS,
Duty Cycle
v
2%.
*Maximum Value of Characteristic across Temperature Range.
http://onsemi.com
3
MGP15N35CL, MGB15N35CL
TYPICAL ELECTRICAL CHARACTERISTICS
(unless otherwise noted)
60
I
C,
COLLECTOR CURRENT (AMPS)
I
C,
COLLECTOR CURRENT (AMPS)
V
GE
= 10.0 V
50
40
30
20
V
GE
= 3.0 V
10
0
V
GE
= 2.5 V
0
1
2
3
4
5
6
7
8
T
J
= 25°C
V
GE
= 5.0 V
V
GE
= 4.0 V
V
GE
= 4.5 V
60
V
GE
= 10.0 V
50
40
30
20
10
0
T
J
= 150°C
V
GE
= 5.0 V
V
GE
= 4.0 V
V
GE
= 3.5 V
V
GE
= 3.0 V
V
GE
= 2.5 V
V
GE
= 4.5 V
V
GE
= 3.5 V
0
1
2
3
4
5
6
7
8
V
CE
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics
V
CE
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 2. Output Characteristics
30
I
C,
COLLECTOR CURRENT (AMPS)
25
20
15
T
J
= 150°C
10
T
J
= 25°C
5
0
T
J
=
−40°C
V
CE
= 10 V
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
−50
−25
I
C
= 15 A
I
C
= 10 A
0
25
50
75
100
125
150
I
C
= 5 A
V
GE
= 5.0 V
I
C
= 20 A
I
C
= 25 A
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
GE
, GATE TO EMITTER VOLTAGE (VOLTS)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 3. Transfer Characteristics
Figure 4. Collector−to−Emitter Saturation
Voltage vs. Junction Temperature
2.5
THRESHOLD VOLTAGE (VOLTS)
Mean + 4
σ
2.0
1.5
Mean
−
4
σ
1.0
10000
C
iss
Mean
I
C
= 1 mA
C, CAPACITANCE (pF)
1000
100
C
oss
10
C
rss
0.5
0.0
−50
1
0
20
40
60
80
100 120
140 160 180 200
−25
0
25
50
75
100
125
150
V
CE
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
TEMPERATURE (°C)
Figure 5. Capacitance Variation
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4
Figure 6. Threshold Voltage vs. Temperature
MGP15N35CL, MGB15N35CL
30
I
L
, LATCH CURRENT (AMPS)
I
L
, LATCH CURRENT (AMPS)
25
20
T = 25°C
15
10
5
0
V
CC
= 50 V
V
GE
= 5.0 V
R
G
= 1000
Ω
30
25
20
15
L = 3.0 mH
10
5
0
−50 −25
L = 6.0 mH
L = 2.0 mH
V
CC
= 50 V
V
GE
= 5.0 V
R
G
= 1000
Ω
T = 150°C
0
2
4
6
8
10
0
25
50
75
100
125
150
175
INDUCTOR (mH)
TEMPERATURE (°C)
Figure 7. Minimum Open Secondary Latch
Current vs. Inductor
Figure 8. Minimum Open Secondary Latch
Current vs. Temperature
30
I
L
, LATCH CURRENT (AMPS)
I
L
, LATCH CURRENT (AMPS)
25
20
15
10
5
0
T = 150°C
T = 25°C
V
CC
= 50 V
V
GE
= 5.0 V
R
G
= 1000
Ω
30
25
20
15
10
5
0
−50 −25
L = 3.0 mH
L = 6.0 mH
L = 2.0 mH
V
CC
= 50 V
V
GE
= 5.0 V
R
G
= 1000
Ω
0
2
4
6
8
10
0
25
50
75
100
125
150
175
INDUCTOR (mH)
TEMPERATURE (°C)
Figure 9. Typical Open Secondary Latch
Current vs. Inductor
12
10
SWITCHING TIME (μS)
8
6
4
2
0
−50
V
CC
= 300 V
V
GE
= 5.0 V
R
G
= 1000
Ω
I
C
= 10 A
L = 300
μH
14
12
SWITCHING TIME (μS)
t
f
10
8
6
4
2
−25
0
25
50
75
100
125
150
0
0
Figure 10. Typical Open Secondary Latch
Current vs. Temperature
t
f
V
CC
= 300 V
V
GE
= 5.0 V
R
G
= 1000
Ω
T
J
= 150°C
L = 300
μH
t
d(off)
t
d(off)
2
4
6
8
10
12
14
16
T
C
, CASE TEMPERATURE (°C)
I
C,
COLLECTOR CURRENT (AMPS)
Figure 11. Switching Speed vs. Case
Temperature
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5
Figure 12. Switching Speed vs. Collector
Current
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