MOSFET RAIL PWR-MOS
参数名称 | 属性值 |
Product Attribute | Attribute Value |
制造商 Manufacturer | NXP(恩智浦) |
产品种类 Product Category | MOSFET |
技术 Technology | Si |
安装风格 Mounting Style | Through Hole |
封装 / 箱体 Package / Case | TO-220-3 |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 55 V |
Id - Continuous Drain Current | 19 A |
Rds On - Drain-Source Resistance | 70 mOhms |
Vgs - Gate-Source Voltage | 15 V |
最小工作温度 Minimum Operating Temperature | - 55 C |
最大工作温度 Maximum Operating Temperature | + 175 C |
Configuration | Single |
Pd-功率耗散 Pd - Power Dissipation | 56 W |
Channel Mode | Enhancement |
系列 Packaging | Rail |
Transistor Type | 1 N-Channel |
Fall Time | 25 ns |
Rise Time | 88 ns |
工厂包装数量 Factory Pack Quantity | 1000 |
Typical Turn-Off Delay Time | 25 ns |
Typical Turn-On Delay Time | 7 ns |
单位重量 Unit Weight | 0.211644 oz |
PHP21N06LT127 | PHD21N06LT118 | |
---|---|---|
描述 | MOSFET RAIL PWR-MOS | MOSFET TRENCH-55 |
Product Attribute | Attribute Value | Attribute Value |
制造商 Manufacturer |
NXP(恩智浦) | NXP(恩智浦) |
产品种类 Product Category |
MOSFET | MOSFET |
技术 Technology |
Si | Si |
安装风格 Mounting Style |
Through Hole | SMD/SMT |
封装 / 箱体 Package / Case |
TO-220-3 | TO-252-3 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds - Drain-Source Breakdown Voltage | 55 V | 55 V |
Id - Continuous Drain Current | 19 A | 19 A |
Rds On - Drain-Source Resistance | 70 mOhms | 70 mOhms |
Vgs - Gate-Source Voltage | 15 V | 15 V |
最小工作温度 Minimum Operating Temperature |
- 55 C | - 55 C |
最大工作温度 Maximum Operating Temperature |
+ 175 C | + 150 C |
Configuration | Single | Single |
Pd-功率耗散 Pd - Power Dissipation |
56 W | 56 W |
Channel Mode | Enhancement | Enhancement |
系列 Packaging |
Rail | Reel |
Transistor Type | 1 N-Channel | 1 N-Channel |
工厂包装数量 Factory Pack Quantity |
1000 | 2500 |
单位重量 Unit Weight |
0.211644 oz | 0.012346 oz |
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