IDD04SG60C
3
rd
Generation thinQ!
TM
SiC Schottky Diode
Features
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery / No forward recovery
• Temperature independent switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
1)
for target applications
• Breakdown voltage tested at 20mA
2)
• Optimized for high temperature operation
• Lowest Figure of Merit Q
C
/I
F
Product Summary
V
DC
Q
C
I
F
;
T
C
<
130 °C
600
4.5
4
V
nC
A
thinQ! 3G Diode designed for fast switching applications like:
• SMPS e.g.; CCM PFC
• Motor Drives; Solar Applications; UPS
Type
IDD04SG60C
Package
PG-TO252-3
Marking
D04G60C
Pin 1
n.c.
Pin 2
A
Pin 3
C
Maximum ratings
Parameter
Continuous forward current
Symbol Conditions
I
F
T
C
<130 °C
T
C
=25 °C,
t
p
=10 ms
T
C
=150 °C,
t
p
=10 ms
T
C
=25 °C,
t
p
=10 µs
T
C
=25 °C,
t
p
=10 ms
T
C
=150 °C,
t
p
=10 ms
Repetitive peak reverse voltage
Diode dv/dt ruggedness
Power dissipation
Operating and storage temperature
Soldering temperature, reflow
soldering (max)
V
RRM
dv/ dt
P
tot
T
j
,
T
stg
T
sold
reflow MSL1
T
j
=25 °C
V
R
= 0….480 V
T
C
=25 °C
Value
4
18
13.5
120
1.8
0.93
600
50
43
-55 ... 175
260
V
V/ns
W
°C
A
2
s
Unit
A
Surge non-repetitive forward current,
I
F,SM
sine halfwave
Non-repetitive peak forward current
i
²t value
I
F,max
∫i
2
dt
Rev. 2.4
page 1
2013-02-11
IDD04SG60C
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
R
thJA
Thermal resistance, junction -
ambient
SMD version, device
on PCB, minimal
footprint
SMD version, device
on PCB, 6 cm
2
cooling
area
5)
-
-
-
-
3.5
75
K/W
Values
typ.
max.
Unit
-
50
-
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
DC blocking voltage
Diode forward voltage
V
DC
V
F
I
R
=0.05 mA,
T
j
=25 °C
I
F
=4 A,
T
j
=25 °C
I
F
=4 A,
T
j
=150 °C
Reverse current
I
R
V
R
=600 V,
T
j
=25 °C
V
R
=600 V,
T
j
=150 °C
AC characteristics
Total capacitive charge
Switching time
3)
Total capacitance
Q
c
t
c
C
V
R
=400 V,I
F
≤I
F,max
,
di
F
/dt =200 A/µs,
T
j
=150 °C
V
R
=1 V,
f
=1 MHz
V
R
=300 V,
f
=1 MHz
V
R
=600 V,
f
=1 MHz
-
-
-
-
-
4.5
-
80
10
10
-
<10
-
-
-
nC
ns
pF
600
-
-
-
-
-
2.1
2.8
0.3
1.3
-
2.3
-
25
270
µA
V
1)
J-STD20 and JESD22
2)
All devices tested under avalanche conditions, for a time periode of 10ms, at 20mA.
3)
t
c
is the time constant for the capacitive displacement current waveform (independent from T
j
, I
LOAD
and
di/dt), different from t
rr
which is dependent on T
j
, I
LOAD
and di/dt. No reverse recovery time constant t
rr
due
to absence of minority carrier injection.
4)
Under worst case Z
th
conditions.
5)
Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm² (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air
6)
Only capacitive charge occuring, guaranteed by design.
Rev. 2.4
page 2
2013-02-11
IDD04SG60C
1 Power dissipation
P
tot
=f(T
C
); parameter: R
thJC(max)
2 Diode forward current
I
F
=f(T
C
)
4)
;
T
j
≤175 °C; parameter:
D = t
p
/T
45
40
30
25
35
30
20
0.1
P
tot
[W]
25
I
F
[A]
15
0.3
20
15
10
0.5
10
0.7
1
5
5
0
25
50
75
100
125
150
175
0
25
75
125
175
T
C
[°C]
T
C
[°C]
3 Typ. forward characteristic
4 Typ. forward characteristic in surge current
mode
I
F
=f(V
F
);
t
p
=400 µs; parameter:T
j
5
I
F
=f(V
F
);
t
p
=400 µs; parameter:
T
j
15
-55ºC
4
25ºC 150ºC
-55ºC
12
25ºC
3
100ºC
9
I
F
[A]
I
F
[A]
175ºC
100ºC
2
6
150ºC
175ºC
1
3
0
0
1
2
3
4
5
0
0
2
4
6
8
V
F
[V]
V
F
[V]
Rev. 2.4
page 3
2013-02-11
IDD04SG60C
5 Typ. capacitance charge vs. current slope
Q
C
=f(di
F
/dt )
6)
;
I
F
≤I
F,max
6 Typ. reverse current vs. reverse voltage
I
R
=f(V
R
); parameter:
T
j
5
10
1
4
10
0
3
10
-1
Q
c
[nC]
I
R
[µA]
175 °C
150 °C
100 °C
25 °C
2
10
-2
1
10
-3
-55 °C
0
100
400
700
1000
10
-4
100
200
300
400
500
600
di
F
/dt [A/µs]
V
R
[V]
7 Transient thermal impedance
Z
thJC
=f(t
p
); parameter:
D = t
P
/T
8 Typ. capacitance vs. reverse voltage
C
=f(V
R
);
T
C
=25 °C,
f
=1 MHz
10
1
80
70
60
0.5
10
0
50
Z
thJC
[K/W]
0.2
C
[pF]
10
-5
10
-4
10
-3
10
-2
10
-1
0.1
40
0.05
30
10
-1
0.02
20
10
0
10
-2
10
-6
0
10
0
10
1
t
p
[s]
V
R
[V]
10
2
10
3
Rev. 2.4
page 4
2013-02-11
IDD04SG60C
9 Typ. C stored energy
E
C
=f(V
R
)
2.5
2.0
1.5
E
c
[µJ]
1.0
0.5
0.0
0
200
400
600
V
R
[V]
Rev. 2.4
page 5
2013-02-11
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