Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
DISCRETE SEMICONDUCTORS
DATA SHEET
PEMD6; PUMD6
NPN/PNP resistor-equipped
transistors;
R1 = 4.7 kΩ, R2 = open
Product data sheet
Supersedes data of 2003 Nov 04
2004 Apr 07
NXP Semiconductors
Product data sheet
NPN/PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
FEATURES
•
Built-in bias resistors
•
Simplified circuit design
•
Reduction of component count
•
Reduced pick and place costs.
APPLICATIONS
•
Low current peripheral driver
•
Replacement of general purpose transistors in digital
applications
•
Control of IC inputs.
DESCRIPTION
PEMD6; PUMD6
NPN/PNP resistor-equipped transistors (see
“_Data_Sheet_Remark Supersedes data of 2003 Nov 04”
for package details).
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
O
TR1
TR2
R1
R2
PARAMETER
collector-emitter
voltage
output current (DC)
NPN
PNP
bias resistor
open
TYP.
−
−
−
−
4.7
−
MAX.
50
100
−
−
−
−
UNIT
V
mA
−
−
kΩ
−
PRODUCT OVERVIEW
PACKAGE
TYPE NUMBER
PHILIPS
PEMD6
PUMD6
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
PINNING
TYPE NUMBER
PEMD6; PUMD6
SIMPLIFIED OUTLINE AND SYMBOL
PIN
handbook, halfpage
6
MARKING CODE
EIAJ
−
SC-88
D6
D*6
(1)
SOT666
SOT363
NPN/NPN
COMPLEMENT
PEMH7
PUMH7
PNP/PNP
COMPLEMENT
PEMB3
PUMB3
DESCRIPTION
emitter TR1
base TR1
collector TR2
emitter TR2
base TR2
collector TR1
5
4
6
5
4
1
2
3
R1
TR1
R1
TR2
4
5
6
1
Top view
2
3
1
MHC028
2
3
2004 Apr 07
2
NXP Semiconductors
Product data sheet
NPN/PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
ORDERING INFORMATION
TYPE
NUMBER
PEMD6
PUMD6
PACKAGE
NAME
−
−
DESCRIPTION
plastic surface mounted package; 6 leads
plastic surface mounted package; 6 leads
PEMD6; PUMD6
VERSION
SOT666
SOT363
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
−
−
−
−
T
amb
≤
25
°C;
note 1
note 1
notes 1 and 2
−
−
−65
−
−65
T
amb
≤
25
°C;
note 1
note 1
notes 1 and 2
−
−
300
300
mW
mW
200
200
+150
150
+150
mW
mW
°C
°C
°C
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
V
CBO
V
CEO
V
EBO
I
O
I
CM
P
tot
collector-base voltage
collector-emitter voltage
emitter-base voltage
output current (DC)
peak collector current
total power dissipation
SOT363
SOT666
T
stg
T
j
T
amb
Per device
P
tot
total power dissipation
SOT363
SOT666
Notes
1. Transistor mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
50
50
5
100
100
V
V
V
mA
mA
2004 Apr 07
3
NXP Semiconductors
Product data sheet
NPN/PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
THERMAL CHARACTERISTICS
SYMBOL
Per transistor
R
th(j-a)
thermal resistance from junction to
ambient
SOT363
SOT666
Per device
R
th(j-a)
thermal resistance from junction to
ambient
SOT363
SOT666
Note
note 1
note 1
PARAMETER
CONDITIONS
PEMD6; PUMD6
VALUE
UNIT
625
625
K/W
K/W
416
416
K/W
K/W
1. Transistor mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
CHARACTERISTICS
T
amb
= 25
°C;
unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
−
−
−
200
−
3.3
I
E
= I
e
= 0; V
CB
= 10 V; f = 1 MHz
−
−
−
−
2.5
3
pF
pF
TYP.
−
−
−
−
−
−
4.7
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
R1
C
c
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
input resistor
collector capacitance
TR1 (NPN)
TR2 (PNP)
V
CB
= 50 V; I
E
= 0
V
CE
= 30 V; I
B
= 0
V
CE
= 30 V; I
B
= 0; T
j
= 150
°C
V
EB
= 5 V; I
C
= 0
V
CE
= 5 V; I
C
= 1 mA
I
C
= 5 mA; I
B
= 0.25 mA
100
1
50
100
−
100
6.1
mV
kΩ
nA
μA
μA
nA
2004 Apr 07
4
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