MAC15M, MAC15N
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave AC control applications
where high noise immunity and high commutating di/dt are required.
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Features
•
•
•
•
•
•
•
•
•
Blocking Voltage to 800 Volts
On-State Current Rating of 15 Amperes RMS at 80°C
Uniform Gate Trigger Currents in Three Modes
High Immunity to dv/dt − 250 V/ms minimum at 125°C
Minimizes Snubber Networks for Protection
Industry Standard TO-220AB Package
High Commutating di/dt − 9.0 A/ms minimum at 125°C
Operational in Three Quadrants, Q1, Q2, and Q3
Pb−Free Packages are Available*
TRIACS
15 AMPERES RMS
600 thru 800 VOLTS
MT2
G
MT1
MARKING
DIAGRAM
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Peak Repetitive Off−State Voltage (Note 1)
(−40 to 125°C, Sine Wave, 50 to 60 Hz,
Gate Open)
MAC15M
MAC15N
On−State RMS Current
(Full Cycle Sine Wave, 60 Hz, T
C
= 80°C)
Peak Non-repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
T
J
= 125°C)
Circuit Fusing Consideration (t = 8.3 ms)
Peak Gate Power
(Pulse Width
≤
1.0
ms,
T
C
= 80°C)
Average Gate Power
(t = 8.3 ms, T
C
= 80°C)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V
DRM,
V
RRM
600
800
I
T(RMS)
I
TSM
15
150
A
A
Value
Unit
V
TO−220AB
CASE 221A−09
STYLE 4
x
A
Y
WW
G
= M or N
= Assembly Location
= Year
= Work Week
= Pb−Free Package
MAC15xG
AYWW
1
2
3
I
2
t
P
GM
P
G(AV)
T
J
T
stg
93
20
0.5
−40 to +125
−40 to +150
A
2
s
W
W
1
°C
°C
2
3
4
PIN ASSIGNMENT
Main Terminal 1
Main Terminal 2
Gate
Main Terminal 2
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
ORDERING INFORMATION
Device
MAC15M
MAC15MG
MAC15N
MAC15NG
Package
TO−220AB
TO−220AB
(Pb−Free)
TO−220AB
TO−220AB
(Pb−Free)
Shipping
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2005
Preferred
devices are recommended choices for future use
and best overall value.
1
December, 2005 − Rev. 2
Publication Order Number:
MAC15M/D
MAC15M, MAC15N
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal ResistanceJunction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
Symbol
R
qJC
R
qJA
T
L
Value
2.0
62.5
260
Unit
°C/W
°C
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(V
D
= Rated V
DRM
, V
RRM
; Gate Open)
ON CHARACTERISTICS
Peak On-State Voltage (Note 2)
(I
TM
=
±
21 A Peak)
Gate Trigger Current (Continuous DC) (V
D
= 12 V, R
L
= 100
W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
Hold Current
(V
D
= 12 Vdc, Gate Open, Initiating Current =
±150
mA)
Latching Current (V
D
= 24 V, I
G
= 35 mA)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
Gate Trigger Voltage (V
D
= 12 V, R
L
= 100
W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current; See Figure 10.
(V
D
= 400 V, I
TM
= 6.0 A, Commutating dv/dt = 24 V/ms,
Gate Open, T
J
= 125°C, f = 250 Hz, No Snubber)
C
L
= 10
mF
L
L
= 40 mH
(di/dt)
c
9.0
−
−
A/ms
V
TM
−
I
GT
5.0
5.0
5.0
I
H
−
I
L
−
−
−
V
GT
0.5
0.5
0.5
0.75
0.72
0.82
1.5
1.5
1.5
33
36
33
50
80
50
V
20
40
mA
13
16
18
35
35
35
mA
1.2
1.6
mA
V
T
J
= 25°C
T
J
= 125°C
I
DRM
,
I
RRM
mA
−
−
−
−
0.01
2.0
Symbol
Min
Typ
Max
Unit
Critical Rate of Rise of Off-State Voltage
(V
D
= Rated V
DRM
, Exponential Waveform, Gate Open, T
J
= 125°C)
2. Pulse Test: Pulse Width
≤
2.0 ms, Duty Cycle
≤
2%.
dv/dt
250
−
−
V/ms
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2
MAC15M, MAC15N
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Quadrant 1
MainTerminal 2 +
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
Holding Current
Quadrant 3
MainTerminal 2 −
I
H
V
TM
I
RRM
at V
RRM
on state
I
H
V
TM
off state
+ Voltage
I
DRM
at V
DRM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
(−) I
GT
GATE
MT1
REF
(+) I
GT
GATE
MT1
REF
Quadrant I
I
GT
−
(−) MT2
(−) MT2
+ I
GT
Quadrant III
(−) I
GT
GATE
MT1
REF
(+) I
GT
GATE
MT1
REF
Quadrant IV
−
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
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3
MAC15M, MAC15N
125
120
TC, CASE TEMPERATURE ( C)
°
115
110
α
= 180°
α
= 30 and 60°
α
= 90°
α
= 120°
20
PAV, AVERAGE POWER (WATTS)
18
16
14
12
10
8
6
4
2
0
2
6
8
10
12
I
T(RMS)
, RMS ON-STATE CURRENT (AMP)
4
14
16
0
0
2
4
6
8
10
12
I
T(RMS)
, ON-STATE CURRENT (AMP)
14
16
α
= 30°
DC
180°
120°
90°
60°
105
100
95
90
85
80
DC
Figure 1. RMS Current Derating
Figure 2. On−State Power Dissipation
100
r(t), TRANSIENT THERMAL RESISTANCE(NORMALIZED)
1
TYPICAL AT
T
J
= 25°C
MAXIMUM @ T
J
= 125°C
0.1
I T, INSTANTANEOUS ON-STATE CURRENT (AMP)
10
0.01
0.1
1
10
100
t, TIME (ms)
1000
1·10
4
Figure 4. Transient Thermal Response
MAXIMUM @ T
J
= 25°C
1
40
I H, HOLD CURRENT (mA)
MT2 POSITIVE
MT2 NEGATIVE
0.1
0
0.5
1
1.5
2
2.5
3
3.5
V
T
, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
4
5
−40
−10
20
50
80
T
J
, JUNCTION TEMPERATURE (°C)
110 125
Figure 3. On−State Characteristics
Figure 5. Hold Current Variation
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4
MAC15M, MAC15N
100
IGT, GATE TRIGGER CURRENT (mA)
1
VGT, GATE TRIGGER VOLTAGE (VOLT)
OFF-STATE VOLTAGE = 12 V
R
L
= 140
W
Q2
Q3
Q1
Q1
Q3
Q2
OFF-STATE VOLTAGE = 12 V
R
L
= 140
W
1
−40
−10
20
50
80
T
J
, JUNCTION TEMPERATURE (°C)
110
125
0.5
−40
−10
+20
50
80
T
J
, JUNCTION TEMPERATURE (°C)
110
125
Figure 6. Typical Holding Current versus Junction
Temperature
(dv/dt) c , CRITICAL RATE OF RISE OF COMMUTATING VOLTAGE(V/
μ
s)
dv/dt , CRITICAL RATE OF RISE OF OFF-STATE VOLTAGE(V/
μ
s)
Figure 7. Gate Trigger Voltage versus Junction
Temperature
5000
4K
V
D
= 800 Vpk
T
J
= 125°C
100
3K
10
T
J
= 125°C
100°C
75°C
2K
I
TM
t
w
V
DRM
f=
1
2 t
w
6f I
TM
1000
1K
0
(di/dt)
c
=
10
100
1000
10000
R
G
, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)
1
10
20
30
40
50
60
70
80
90 100
(di/dt)
c
, RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
Figure 8. Critical Rate of Rise of Off−State Voltage
(Exponential)
Figure 9. Critical Rate of Rise of
Commutating Voltage
L
L
200 V
RMS
ADJUST FOR
I
TM
, 60 Hz V
AC
TRIGGER
CHARGE
CONTROL
TRIGGER CONTROL
MEASURE
I
1N4007
CHARGE
−
+
MT2
1N914 51
W
G
MT1
200 V
NON-POLAR
C
L
Note: Component values are for verification of rated (di/dt)
c
. See AN1048 for additional information.
Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)
c
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5
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