TSM9926D
Taiwan Semiconductor
Dual N-Channel Power MOSFET
20V, 6.0A, 30mΩ
FEATURES
●
●
Advance Trench Process Technology
High Density Cell Design for Ultra Low On-
resistance
KEY PERFORMANCE PARAMETERS
PARAMETER
V
DS
V
GS
= 4.5V
R
DS(on)
(max)
Q
g
V
GS
= 2.5V
VALUE
20
30
mΩ
40
4.86
nC
UNIT
V
APPLICATION
●
●
Specially Designed for Li-on Battery Packs
Battery Switch Application
SOP-8
Notes:
Moisture sensitivity level: level 3. Per J-STD-020
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note 1)
SYMBOL
V
DS
V
GS
T
C
= 25°C
I
D
I
DM
I
S
P
DTOT
T
J
, T
STG
(Note 2)
LIMIT
20
±12
6
30
1.7
1.6
1.1
- 55 to +150
UNIT
V
V
A
A
A
W
°C
Continuous Source Current (Diode Conduction)
Total Power Dissipation
T
A
= 25°C
T
A
= 75°C
Operating Junction and Storage Temperature Range
THERMAL PERFORMANCE
PARAMETER
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance
SYMBOL
R
ӨJC
R
ӨJA
LIMIT
40
77
UNIT
°C/W
°C/W
Notes:
R
ӨJA
is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. R
ӨJA
is guaranteed by design while R
ӨCA
is determined by the user’s board
design. R
ӨJA
shown below for single device operation on FR-4 PCB in still air.
Document Number: DS_P0000156
1
Version: B15
TSM9926D
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Static
(Note 3)
CONDITIONS
SYMBOL
MIN
TYP
MAX
UNIT
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
(Note 4)
V
GS
= 0V, I
D
= 250µA
V
DS
= V
GS
, I
D
= 250µA
V
GS
= ±12V, V
DS
= 0V
V
DS
= 20V, V
GS
= 0V
V
DS
= 5V, V
GS
= 4.5V
V
GS
= 4.5V, I
D
= 6.0A
V
GS
= 2.5V, I
D
= 5.2A
V
DS
= 10V, I
D
= 6A
BV
DSS
V
GS(TH)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
g
fs
20
0.6
--
--
30
--
--
--
--
--
--
--
--
21
30
30
--
--
±100
1
--
30
40
--
V
V
nA
µA
A
mΩ
S
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
(Note 5)
Q
g
V
DS
= 10V, I
D
= 6A,
V
GS
= 4.5V
Q
gs
Q
gd
C
iss
V
DS
= 8V, V
GS
= 0V,
F = 1.0MHz
C
oss
C
rss
--
--
--
--
--
4.86
0.92
1.4
562
106
75
--
--
--
--
--
pF
nC
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Source-Drain Diode
Forward Voltage
Notes:
1.
2.
3.
4.
5.
Pulse width limited by the Maximum junction temperature.
Surface Mounted on FR4 Board, t
≤
5 sec.
Pulse test: PW
≤
300µs, duty cycle
≤
2%.
For DESIGN AID ONLY, not subject to production testing.
Switching time is essentially independent of operating temperature.
(Note 3)
t
d(on)
V
DD
= 10V,
R
GEN
= 6Ω,
I
D
= 1A, V
GS
= 4.5V,
t
r
t
d(off)
t
f
--
--
--
--
8.1
9.95
21.85
5.35
--
--
--
--
ns
I
S
= 1.7A, V
GS
= 0V
V
SD
--
0.7
1.2
V
Document Number: DS_P0000156
2
Version: B15
TSM9926D
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
TSM9926DCS RLG
PACKAGE
SOP-8
PACKING
2,500pcs / 13” Reel
Note:
1. Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
2. Halogen-free according to IEC 61249-2-21 definition
Document Number: DS_P0000156
3
Version: B15
TSM9926D
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
Document Number: DS_P0000156
4
Version: B15
TSM9926D
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
Document Number: DS_P0000156
5
Version: B15
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