NSB1010XV5T5
Preferred Device
Dual Common
Base−Collector Bias
Resistor Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the NSB1010XV5T5, two
complementary BRT devices are housed in the SOT−553 package
which is ideal for low power surface mount applications where board
space is at a premium.
•
Simplifies Circuit Design
•
Reduces Board Space
•
Reduces Component Count
•
Available in 8 mm, 7 inch Tape and Reel
•
This device is manufactured with a Pb−Free external lead finish only.
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
,
−
minus sign for Q
1
(PNP) omitted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
V
CBO
V
CEO
I
C
Value
50
50
100
Unit
Vdc
Vdc
mAdc
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3
R1
2
R2
Q2
1
R2
Q1
4
R1
5
5
1
SOT−553
CASE 463B
MARKING
DIAGRAM
5
US D
1
US = Specific Device Code
D = Date Code
ORDERING INFORMATION
Device
NSB1010XV5T5
Package
SOT−553
(Pb−Free)
Shipping
†
2 mm pitch
8000/Tape & Reel
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance
Junction-to-Ambient
Characteristic
(Both Junctions Heated)
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance
Junction-to-Ambient
Junction and Storage Temperature
Symbol
P
D
Max
357 (Note 1)
2.9 (Note 1)
350 (Note 1)
Unit
mW
mW/°C
°C/W
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
R
qJA
Symbol
P
D
Max
500 (Note 1)
4.0 (Note 1)
250 (Note 1)
−55
to +150
Unit
mW
mW/°C
°C/W
°C
R
qJA
T
J
, T
stg
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 @ Minimum Pad.
1
Publication Order Number:
NSB1010XV5/D
Semiconductor Components Industries, LLC, 2005
January, 2005
−
Rev. 0
NSB1010XV5T5
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Q1 TRANSISTOR: PNP
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
=
−50
V, I
E
= 0)
Collector-Emitter Cutoff Current (V
CB
=
−50
V, I
B
= 0)
Emitter-Base Cutoff Current (V
EB
=
−6.0
V, I
C
= 0)
Collector-Base Breakdown Voltage (I
C
=
−10
mA,
I
E
= 0)
Collector-Emitter Breakdown Voltage (Note 2) (I
C
=
−2.0
mA, I
B
= 0)
ON CHARACTERISTICS
(Note 2)
Collector-Emitter Saturation Voltage (I
C
=
−10
mA, I
B
=
−1.0
mA)
DC Current Gain (V
CE
=
−10
V, I
C
=
−5.0
mA)
Output Voltage (on) (V
CC
=
−5.0
V, V
B
=
−2.5
V, R
L
= 1.0 kW)
Output Voltage (off) (V
CC
=
−5.0
V, V
B
=
−0.5
V, R
L
= 1.0 kW)
Input Resistor
Resistor Ratio
Q2 TRANSISTOR: NPN
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
Collector-Emitter Cutoff Current (V
CB
= 50 V, I
B
= 0)
Emitter-Base Cutoff Current (V
EB
= 6.0, I
C
= 5.0 mA)
ON CHARACTERISTICS
Collector-Base Breakdown Voltage (I
C
= 10
mA,
I
E
= 0)
Collector-Emitter Breakdown Voltage (I
C
= 2.0 mA, I
B
= 0)
DC Current Gain (V
CE
= 10 V, I
C
= 5.0 mA)
Collector−Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.3 mA)
Output Voltage (on) (V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
Output Voltage (off) (V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
Input Resistor
Resistor Ratio
2. Pulse Test: Pulse Width < 300
ms,
Duty Cycle < 2.0%.
V
(BR)CBO
V
(BR)CEO
h
FE
V
CE(SAT)
V
OL
V
OH
R1
R1/R2
50
50
35
−
−
4.9
7.0
0.8
−
−
60
−
−
−
10
1.0
−
−
−
0.25
0.2
−
13
1.2
Vdc
Vdc
Vdc
kW
−
Vdc
Vdc
I
CBO
I
CEO
I
EBO
−
−
−
−
−
−
100
500
0.5
nAdc
nAdc
mAdc
V
CE(sat)
h
FE
V
OL
V
OH
R
1
R
1
/R
2
−
15
−
−4.9
3.3
0.8
−
27
−
−
4.7
1.0
−0.25
−
−0.2
−
6.1
1.2
Vdc
−
Vdc
Vdc
kW
−
I
CBO
I
CEO
I
EBO
V
(BR)CBO
V
(BR)CEO
−
−
−
−50
−50
−
−
−
−
−
−100
−500
−1.5
−
−
nAdc
nAdc
mAdc
Vdc
Vdc
Symbol
Min
Typ
Max
Unit
250
PD , POWER DISSIPATION (MILLIWATTS)
200
150
100
50
0
−50
R
qJA
= 833°C/W
0
50
100
T
A
, AMBIENT TEMPERATURE (°C)
150
Figure 1. Derating Curve
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2
NSB1010XV5T5
TYPICAL ELECTRICAL CHARACTERISTICS — PNP TRANSISTOR
V
CE(sat)
, COLLECTOR VOLTAGE (VOLTS)
1
I
C
/I
B
= 10
75°C
0.1
−25°C
25°C
h
FE
, DC CURRENT GAIN
75°C
1000
V
CE
= 10 V
100
25°C
10
T
A
=
−25°C
0.01
0.001
0
30
20
40
10
I
C
, COLLECTOR CURRENT (mA)
50
1
1
10
I
C
, COLLECTOR CURRENT (mA)
100
Figure 2. V
CE(sat)
versus I
C
Figure 3. DC Current Gain
12
10
8
6
4
2
0
I
C
, COLLECTOR CURRENT (mA)
f = 1 MHz
l
E
= 0 V
T
A
= 25°C
100
10
75°C
25°C
C
ob
, CAPACITANCE (pF)
1
0.1
0.01
V
O
= 5 V
0
1
2
3
4
5
6
7
8
V
in
, INPUT VOLTAGE (VOLTS)
9
10
T
A
=
−25°C
0
5
10 15 20 25 30 35 40 45
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
10
V
in
, INPUT VOLTAGE (VOLTS)
T
A
=
−25°C
1
75°C
25°C
V
O
= 0.2 V
0.1
0
10
20
30
40
I
C
, COLLECTOR CURRENT (mA)
50
Figure 6. Input Voltage versus Output Current
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3
NSB1010XV5T5
TYPICAL ELECTRICAL CHARACTERISTICS — NPN TRANSISTOR
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1
I
C
/I
B
= 10
T
A
= −25°C
hFE , DC CURRENT GAIN
25°C
75°C
1000
V
CE
= 10 V
T
A
= 75°C
25°C
−25°C
0.1
100
0.01
0.001
0
20
40
I
C
, COLLECTOR CURRENT (mA)
50
10
1
10
I
C
, COLLECTOR CURRENT (mA)
100
Figure 7. V
CE(sat)
versus I
C
Figure 8. DC Current Gain
4
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
I
E
= 0 mA
T
A
= 25°C
100
10
1
0.1
0.01
75°C
25°C
T
A
= −25°C
C ob , CAPACITANCE (pF)
3
2
1
V
O
= 5 V
0
0
10
20
30
40
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
0
2
4
6
V
in
, INPUT VOLTAGE (VOLTS)
8
10
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100
V
O
= 0.2 V
V in , INPUT VOLTAGE (VOLTS)
T
A
= −25°C
10
75°C
25°C
1
0.1
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
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4
NSB1010XV5T5
PACKAGE DIMENSIONS
SOT−553
5−LEAD PACKAGE
CASE 463B−01
ISSUE A
A
−X−
5
4
C
K
1
2
3
B
−Y−
D
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.
MILLIMETERS
MIN
MAX
1.50
1.70
1.10
1.30
0.50
0.60
0.17
0.27
0.50 BSC
0.08
0.18
0.10
0.30
1.50
1.70
INCHES
MIN
MAX
0.059
0.067
0.043
0.051
0.020
0.024
0.007
0.011
0.020 BSC
0.003
0.007
0.004
0.012
0.059
0.067
G
5 PL
M
J
X Y
0.08 (0.003)
DIM
A
B
C
D
G
J
K
S
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.35
0.0531
1.0
0.0394
0.5
0.5
0.0197 0.0197
SCALE 20:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
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