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A3PN060-VQG100

产品描述FPGA - Field Programmable Gate Array ProASIC3
产品类别可编程逻辑器件    可编程逻辑   
文件大小6MB,共111页
制造商Microsemi
官网地址https://www.microsemi.com
标准
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A3PN060-VQG100概述

FPGA - Field Programmable Gate Array ProASIC3

A3PN060-VQG100规格参数

参数名称属性值
是否Rohs认证符合
包装说明TFQFP,
Reach Compliance Codecompliant
JESD-30 代码S-PQFP-G100
JESD-609代码e3
长度14 mm
湿度敏感等级3
可配置逻辑块数量1536
等效关口数量60000
端子数量100
最高工作温度70 °C
最低工作温度-20 °C
组织1536 CLBS, 60000 GATES
封装主体材料PLASTIC/EPOXY
封装代码TFQFP
封装形状SQUARE
封装形式FLATPACK, THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度)260
可编程逻辑类型FIELD PROGRAMMABLE GATE ARRAY
认证状态Not Qualified
座面最大高度1.2 mm
最大供电电压1.575 V
最小供电电压1.425 V
标称供电电压1.5 V
表面贴装YES
技术CMOS
温度等级OTHER
端子面层Matte Tin (Sn)
端子形式GULL WING
端子节距0.5 mm
端子位置QUAD
处于峰值回流温度下的最长时间40
宽度14 mm
Base Number Matches1

文档预览

下载PDF文档
Revision 12
DS0111
ProASIC3 nano Flash FPGAs
Features and Benefits
Wide Range of Features
• 10 k to 250 k System Gates
• Up to 36 kbits of True Dual-Port SRAM
• Up to 71 User I/Os
Advanced I/Os
• 1.5 V, 1.8 V, 2.5 V, and 3.3 V Mixed-Voltage Operation
• Bank-Selectable I/O Voltages—up to 4 Banks per Chip
• Single-Ended I/O Standards: LVTTL, LVCMOS 3.3 V /
2.5 V / 1.8 V / 1.5 V
• Wide Range Power Supply Voltage Support per JESD8-B,
Allowing I/Os to Operate from 2.7 V to 3.6 V
• I/O Registers on Input, Output, and Enable Paths
• Selectable Schmitt Trigger Inputs
• Hot-Swappable and Cold-Sparing I/Os
• Programmable Output Slew Rate
and Drive Strength
• Weak Pull-Up/-Down
• IEEE 1149.1 (JTAG) Boundary Scan Test
• Pin-Compatible Packages across the ProASIC3 Family
• Up to Six CCC Blocks, One with an Integrated PLL
• Configurable Phase Shift, Multiply/Divide, Delay
Capabilities and External Feedback
• Wide Input Frequency Range (1.5 MHz to 350 MHz)
Reprogrammable Flash Technology
• 130-nm, 7-Layer Metal (6 Copper), Flash-Based CMOS
Process
• Instant On Level 0 Support
• Single-Chip Solution
• Retains Programmed Design when Powered Off
High Performance
• 350 MHz System Performance
In-System Programming (ISP) and Security
• ISP Using On-Chip 128-Bit Advanced Encryption Standard
(AES) Decryption via JTAG (IEEE 1532–compliant)
• FlashLock
®
Designed to Secure FPGA Contents
Clock Conditioning Circuit (CCC) and PLL
Low Power
Low Power
nano Products
1.5 V Core Voltage for Low Power
Support for 1.5 V-Only Systems
Low-Impedance Flash Switches
ProASIC
®
3
Embedded Memory
• 1 kbit of FlashROM User Nonvolatile Memory
• SRAMs and FIFOs with Variable-Aspect-Ratio 4,608-Bit RAM
Blocks (×1, ×2, ×4, ×9, and ×18 organizations)
• True Dual-Port SRAM (except ×18 organization)
High-Performance Routing Hierarchy
• Segmented, Hierarchical Routing and Clock Structure
Enhanced Commercial Temperature Range
• T
j
= –20°C to +85°C
Table 1 • ProASIC3 nano Devices
ProASIC3 nano Devices
ProASIC3 nano-Z Devices
1
System Gates
Typical Equivalent Macrocells
VersaTiles (D-flip-flops)
RAM Kbits (1,024 bits)
2
4,608-Bit Blocks
2
A3PN010
10,000
86
260
1
A3PN015
1
A3PN020
15,000
128
384
1
4
3
49
QN68
20,000
172
520
1
4
3
49
52
QN68
30,000
256
768
1
6
2
77
83
QN48, QN68
VQ100
A3PN060
60,000
512
1,536
18
4
1
Yes
1
18
2
71
71
A3PN125
125,000
1,024
3,072
36
8
1
Yes
1
18
2
71
71
A3PN250
A3N250Z
1
250,000
2,048
6,144
36
8
1
Yes
1
18
4
68
68
A3PN030Z
1,2
A3PN060Z
1
A3PN125Z
1
FlashROM Kbits
Secure (AES) ISP
VersaNet Globals
I/O Banks
Maximum User I/Os (packaged device)
Maximum User I/Os (Known Good Die)
Package Pins
QFN
VQFP
2
2
4
2
34
34
QN48
Integrated PLL in CCCs
VQ100
VQ100
VQ100
Notes:
1. Not recommended for new designs. Few devices/packages are obsoleted. For more information on obsoleted devices/packages, refer
to the
PDN 1503 - IGLOO nano Z and ProASIC3 nano Z Families.
2. A3PN030Z and smaller devices do not support this feature.
3. For higher densities and support of additional features, refer to the
DS0097: ProASIC3 Family Flash FPGAs Datasheet
and
DS0098:
ProASIC3E Flash Family FPGAs Datasheet.
† A3PN030 and smaller devices do not support this feature.
September 2015
© 2015 Microsemi Corporation
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