Datasheet> 器件分类 > 半导体> 分立半导体> RN1966FSTPL3

RN1966FSTPL3: 产品描述Bipolar Transistors - Pre-Biased 4.7K x 47Kohms Polarity=NPNx2; 产品类别半导体分立半导体; 文件大小128KB，共9页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/

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RN1966FSTPL3概述

Bipolar Transistors - Pre-Biased 4.7K x 47Kohms Polarity=NPNx2

RN1966FSTPL3规格参数

参数名称	属性值
Product Attribute	Attribute Value
制造商 Manufacturer	Toshiba(东芝)
产品种类 Product Category	Bipolar Transistors - Pre-Biased
RoHS	N
Configuration	Dual
Transistor Polarity	NPN
Typical Input Resistor	4.7 kOhms
Typical Resistor Ratio	0.1
安装风格 Mounting Style	SMD/SMT
DC Collector/Base Gain hfe Min	120
Collector- Emitter Voltage VCEO Max	20 V
Continuous Collector Current	50 mA
Peak DC Collector Current	50 mA
Pd-功率耗散 Pd - Power Dissipation	50 mW
最大工作温度 Maximum Operating Temperature	+ 150 C
系列 Packaging	Cut Tape
系列 Packaging	MouseReel
系列 Packaging	Reel
DC Current Gain hFE Max	120
工厂包装数量 Factory Pack Quantity	10000

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RN1961FS~RN1966FS

TOSHIBA Transistor

Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN1961FS,RN1962FS,RN1963FS

RN1964FS,RN1965FS,RN1966FS

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

1.0±0.05

0.1±0.05

0.8±0.05

0.1±0.05

0.15±0.05

Unit: mm

•

Two devices are incorporated into a fine pitch Small Mold (6 pin)

0.35 0.35

1.0±0.05

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enable the manufacture of ever more

compact equipment and save assembly cost.

0.7±0.05

package.

0.1±0.05

Equivalent Circuit and Bias Resistor Values

Type No.

RN1961FS

RN1962FS

RN1963FS

RN1964FS

RN1965FS

RN1966FS

R1 (kΩ)

4.7

2.2

4.7

R2 (kΩ)

4.7

0.48

-0.04

+0.02

•

Complementary to RN2961FS~RN2966FS

fS6

JEDEC

JEITA

1.EMIITTER1

2.EMITTER2

3.BASE2

4.COLLECTOR2

5.BASE1

6.COLLECTOR1

(E1)

(E2)

(B2)

(C2)

(B1)

(C1)

―

2-1F1C

TOSHIBA

Weight: 0.001 g (typ.)

Absolute Maximum Ratings

(Ta = 25°C)

(Q1, Q2 common)

Characteristics

Collector-base voltage

Collector-emitter voltage

RN1961FS~

1966FS

RN1961FS~

1964FS

Emitter-base voltage

RN1965FS,

1966FS

Symbol

CBO

CEO

Rating

EBO

(Note 1)

stg

150

−55~150

°C

Unit

Equivalent Circuit

(top view)

Collector current

Collector power dissipation RN1961FS~

RN1966FS

Junction temperature

Storage temperature range

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total rating

2007-11-01

RN1966FSTPL3相似产品对比

	RN1966FSTPL3	RN1965FSTPL3	RN1961FS(TPL3)
描述	Bipolar Transistors - Pre-Biased 4.7K x 47Kohms Polarity=NPNx2	Bipolar Transistors - Pre-Biased 2.2K x 47Kohms Polarity=NPNx2	Bipolar Transistors - Pre-Biased 50mA 20volts 6Pin 4.7K x 4.7Kohms
Product Attribute	Attribute Value	Attribute Value	-
制造商 Manufacturer	Toshiba(东芝)	Toshiba(东芝)	-
产品种类 Product Category	Bipolar Transistors - Pre-Biased	Bipolar Transistors - Pre-Biased	-
RoHS	N	Details	-
Configuration	Dual	Dual	-
Transistor Polarity	NPN	NPN	-
Typical Input Resistor	4.7 kOhms	2.2 kOhms	-
Typical Resistor Ratio	0.1	0.047	-
安装风格 Mounting Style	SMD/SMT	SMD/SMT	-
DC Collector/Base Gain hfe Min	120	120	-
Collector- Emitter Voltage VCEO Max	20 V	20 V	-
Continuous Collector Current	50 mA	50 mA	-
Peak DC Collector Current	50 mA	50 mA	-
Pd-功率耗散 Pd - Power Dissipation	50 mW	50 mW	-
最大工作温度 Maximum Operating Temperature	+ 150 C	+ 150 C	-
系列 Packaging	Reel	Reel	-
DC Current Gain hFE Max	120	120	-
工厂包装数量 Factory Pack Quantity	10000	10000	-

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