®
TBA820M
1.2W AUDIO AMPLIFIER
DESCRIPTION
The TBA820M is a monolithic integrated audio
amplifier in a 8 lead dual in-line plastic package. It
is intended for use as low frequency class B power
amplifier with wide range of supply voltage: 3 to
16V, in portable radios, cassette recorders and
players etc. Main features are: minimum working
supply voltage of 3V, low quiescent current, low
number of external components, good ripple rejec-
tion, no cross-over distortion, low power dissipa-
tion.
Output power: P
o
= 2W at 12V/8Ω, 1.6W at 9V/4Ω
and 1.2W at 9V/8Ω.
Minidip
ORDERING NUMBER: TBA820M
ABSOLUTE MAXIMUM RATINGS
Symbol
V
s
I
o
P
tot
T
stg
, T
j
Supply voltage
Output peak current
Parameter
Power dissipation at T
amb
= 50°C
Storage and junction temperature
TEST AND APPLICATION CIRCUITS
Figure 1. Circuit diagram with load connected to the
supply voltage
b
O
et
l
so
od
r
P
e
uc
s)
t(
O
-
so
b
te
le
ro
P
uc
d
Value
16
1.5
1
s)
t(
Unit
V
A
W
°C
-40 to 150
Figure 2. Circuit diagram with load connected
to ground
* Capacitor C6 must be used when high ripple
rejection is requested.
September 2003
1/6
TBA820M
ELECTRICAL CHARACTERISTICS
(Refer to the test circuits Vs = 9V, T
amb
= 25
°C
unless otherwise
specified)
Symbol
V
s
V
o
I
d
I
b
P
o
Parameter
Supply voltage
Quiescent output voltage (pin 5)
Quiescent drain current
Bias current (pin 3)
Output power
d = 10%
R
f
= 120Ω
V
s
= 12V
V
s
= 9V
V
s
= 9V
V
s
= 6V
V
s
= 3.5V
f = 1 kHz
R
L
= 8Ω
C
5
= 1000
µF
R
f
= 120Ω
P
o
= 500 mW
R
L
= 8Ω
f = 1 kHz
C
B
= 680 pF
C
B
= 220 pF
f = 1 kHz
R
L
= 8Ω
R
L
= 4Ω
R
L
= 8Ω
R
L
= 4Ω
R
L
= 4Ω
2
1.6
1.2
0.75
0.25
5
Test conditions
Min.
3
4
4.5
4
0.1
Typ.
Max.
16
5
12
Unit
V
V
mA
µA
0.9
Ri
B
Input resistance (pin 3)
Frequency response (-3 dB)
d
Distortion
G
v
G
v
Voltage gain (open loop)
Voltage gain (closed loop)
e
N
i
N
S
+
N
N
Input noise voltage (*)
Input noise current (*)
b
O
SVR
et
l
so
Signal to noise ratio (*)
r
P
e
od
uc
s)
t(
f = 1 kHz
R
L
= 8Ω
O
-
so
b
R
f
= 33Ω
te
le
ro
P
uc
d
s)
t(
W
W
W
W
W
MΩ
Hz
25 to 7,000
25 to 20,000
0.8
%
0.4
75
45
34
3
0.4
µV
nA
dB
dB
dB
R
f
= 120Ω
R
L
= 8Ω
R
f
= 33Ω
R
f
= 120Ω
f = 1 kHz
P
o
= 1.2W
R
L
= 8Ω
G
v
= 34 dB
R
L
= 8Ω
f
(ripple)
= 100 Hz
C6 = 47
µF
R
f
= 120Ω
R1 = 10KΩ
R1 = 50 kΩ
80
70
Supply voltage rejection
(test circuit of fig. 2)
42
dB
(*) B = 22 Hz to 22 KHz
3/6
TBA820M
Figure 3. Output power vs.
supply voltage
Figure 4. Harmonic distortion
vs. output power
Figure 5. Power dissipation
and efficiency vs. output
power
Figure 6. Maximum power
di s si pa ti on (sine wave
operation)
Figure 7. Suggested value of
C
B
vs. R
f
bs
O
Figure 9. Harmonic distortion
vs. frequency
et
l
o
ro
P
e
uc
d
s)
t(
O
-
so
b
te
le
Fi gure 8. Frequency res-
ponse
ro
P
uc
d
s)
t(
Figure 10. Supply voltage
rejection (Fig. 2 circuit)
Figure 11. Quiescent current
vs. supply voltage
4/6
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