AUTOMOTIVE GRADE
AUIRF1324S
AUIRF1324L
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
typ.
max.
I
D (Silicon Limited)
I
D (Package Limited)
D
D
Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
24V
1.3m
1.65m
340A
195A
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications.
Base part number
AUIRF1324L
AUIRF1324S
Package Type
TO-262
D
2
-Pak
S
G
D Pak
AUIRF1324S
2
G
TO-262
S
D
AUIRF1324L
G
Gate
D
Drain
S
Source
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRF1324L
AUIRF1324S
AUIRF1324STRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
340
240
195
1420
300
2.0
± 20
270
See Fig.14,15, 18a, 18b
0.46
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
R
JC
R
JA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mount), D
2
Pak
Typ.
–––
–––
Max.
0.50
40
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
1
2015-11-11
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
R
DS(on)
V
GS(th)
gfs
R
G
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss eff.(ER)
C
oss eff.(TR)
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Gate Resistance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Q
g
- Q
gd
)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
Min.
24
–––
–––
2.0
180
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max.
–––
22
1.3
–––
–––
2.3
–––
–––
–––
–––
160
84
49
76
17
190
83
120
7590
3440
1960
4700
4490
–––
–––
1.65
4.0
–––
–––
20
250
100
-100
240
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
A
–––
–––
46
71
160
430
7.7
1420
1.3
–––
–––
–––
–––
–––
V
ns
nC
A
Units
V
AUIRF1324S/L
Conditions
V
GS
= 0V, I
D
= 250µA
mV/°C Reference to 25°C, I
D
= 5mA
m V
GS
= 10V, I
D
= 195A
V
S
µA
nA
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 10V, I
D
= 195A
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V,V
GS
= 0V,T
J
=125°C
V
GS
= 20V
V
GS
= -20V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
D
= 195A
V
DS
= 12V
nC
V
GS
= 10V
V
DD
= 16V
I
D
= 195A
ns
R
G
= 2.7
V
GS
= 10V
V
GS
= 0V
V
DS
= 24V
pF
ƒ = 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 0V to 19V
V
GS
= 0V, V
DS
= 0V to 19V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C,I
S
= 195A,V
GS
= 0V
T
J
= 25°C
V
DD
= 20V
T
J
= 125°C
I
F
= 195A,
T
J
= 25°C di/dt = 100A/µs
T
J
= 125°C
T
J
= 25°C
Diode Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Q
rr
I
RRM
t
on
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
Typ. Max.
––– 350
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that
current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
Jmax,
starting T
J
= 25°C, L = 0.014mH, R
G
= 25, I
AS
= 195A, V
GS
=10V. Part not recommended for use above this value.
I
SD
195A,
di/dt
450A/µs,
V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
400µs;
duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
R
is measured at T
J
approximately 90°C.
2
2015-11-11
AUIRF1324S/L
10000
60µs PULSE WIDTH
Tj = 25°C
TOP
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.5V
4.0V
10000
60µs PULSE WIDTH
Tj = 175°C
ID, Drain-to-Source Current (A)
TOP
ID, Drain-to-Source Current (A)
1000
1000
BOTTOM
100
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.5V
4.0V
10
100
1
4.0V
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
4.0V
10
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig. 1
Typical Output Characteristics
1000
Fig. 2
Typical Output Characteristics
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 195A
ID, Drain-to-Source Current (A)
VGS = 10V
100
T J = 175°C
10
T J = 25°C
1.5
1.0
1
VDS = 15V
60µs
PULSE WIDTH
0.1
2
3
4
5
6
7
8
9
0.5
-60 -40 -20 0 20 40 60 80 100 120 140160 180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig. 3
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Fig. 4
Normalized On-Resistance vs. Temperature
14.0
ID = 195A
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
VDS = 19V
VDS = 12V
C, Capacitance (pF)
10000
Ciss
C oss
Crss
1000
1
10
VDS , Drain-to-Source Voltage (V)
100
0
50
100
150
200
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
2015-11-11
1000
10000
AUIRF1324S/L
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1000
100µsec
1msec
100
Limited by
package
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
1
1
10
VDS , Drain-to-Source Voltage (V)
100
ISD, Reverse Drain Current (A)
100
T J = 175°C
10
T J = 25°C
ID, Drain-to-Source Current (A)
10
VGS = 0V
1.0
0.0
0.5
1.0
1.5
VSD , Source-to-Drain Voltage (V)
DC
350
300
ID, Drain Current (A)
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig. 7
Typical Source-to-Drain Diode
Forward Voltage
Limited By Package
Fig 8.
Maximum Safe Operating Area
32
Id = 5mA
250
200
150
100
50
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
30
28
26
24
-60 -40 -20 0 20 40 60 80 100 120 140160 180
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs. Case Temperature
EAS , Single Pulse Avalanche Energy (mJ)
2.0
1.8
1.6
1.4
Energy (µJ)
Fig 10.
Drain-to-Source Breakdown Voltage
1200
1000
800
600
400
200
0
ID
TOP
44A
83A
BOTTOM 195A
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-5
0
5
10
15
20
25
30
25
50
75
100
125
150
175
VDS, Drain-to-Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 11.
Typical C
OSS
Stored Energy
4
Fig 12.
Maximum Avalanche Energy vs. Drain Current
2015-11-11
AUIRF1324S/L
1
Thermal Response ( Z thJC ) °C/W
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
J
R
1
R
1
J
1
2
R
2
R
2
R
3
R
3
3
R
4
R
4
C
1
2
3
4
4
C
Ri (°C/W)
0.0125
0.0822
0.2019
0.2036
I
(sec)
0.000008
0.000078
0.001110
0.007197
Ci=
iRi
Ci=
iRi
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
0.001
1E-006
t1 , Rectangular Pulse Duration (sec)
Fig 13.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj
= 150°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)
0.01
100
0.05
0.10
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 14.
Avalanche Current vs. Pulse width
5
2015-11-11
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