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OP215–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
(at V =
±15
V, T = 25 C, unless otherwise noted.)
S
A
Parameter
Input Offset Voltage
Input Offset Current
1
Input Bias Current
1
Input Resistance
Large-Signal Voltage
Gain
Output Voltage Swing
Supply Current
Slew Rate
Gain Bandwidth
Product
3
Symbol
V
OS
I
OS
I
B
R
IN
A
VO
V
O
I
SY
Conditions
R
S
= 50
W
‘G’ Grade
T
j
= 25∞C
Device Operating
T
j
= 25∞C
Device Operating
Min
OP215E
Type
0.2
3
5
±
15
±
18
10
1,2
Max
1.0
50
100
±
100
±
300
Min
OP215G
Type
Max
2.0
2.5
3
5
±
15
±
18
10
1,2
4.0
6.0
100
200
±
300
±
600
Unit
mV
mV
pA
pA
pA
pA
W
V/mV
V
V
R
L
2 kW,
V
O
=
±
10 V
R
L
= 10 kW
R
L
= 2 kW
‘G’ Grade
150
±
12
±
11
500
±
13
±
12.7
6.0
8.5
50
±
12
±
11
200
±
13
±
12.7
7.0
7.0
10.0
12.0
mA
mA
V/ s
MHz
MHz
s
s
s
V
V
dB
V/V
V/V
nV/÷Hz
nV/÷Hz
pA/÷Hz
pA/÷Hz
pF
SR
GBW
A
VCL
= 1
10
3.5
18
5.7
13
2.3
1.1
0.9
5
3.0
15
5.4
12
2.4
1.2
1.0
Closed-Loop Bandwidth CLBW
Setting Time
t
S
A
VCL
= 1
To 0.01%
To 0.05%
2
To 0.10%
10.2
–10.2
V
CM
=
±
IVR
E, G Grades
V
S
=
±
10 V to
±
16 V
V
S
=
±
10 V to
±
15 V
f
O
= 100 Hz
f
O
= 1,000 Hz
f
O
= 100 Hz
f
O
= 1,000 Hz
82
Input Voltage Range
Common-Mode
Rejection Ratio
Power Supply Rejection
Ratio
Input Noise Voltage
Density
Input Noise Current
Density
Input Capacitance
IVR
CMRR
PSRR
n
I
n
C
IN
14.8
–11.5
100
10
20
15
0.01
0.01
3
51
10.1
–10.1
80
14.8
–11.5
96
16
20
15
0.01
0.01
3
100
NOTES
1
Input bias current is specified for two different conditions. The T
j
= 25∞C specification is with the junction at ambient temperature; the device operating specification is
with the device operating in a warmed up condition at 25∞C ambient. The warmed up bias-current value is correlated to the junction temperature value via the curves
of I
S
versus T
j
and I
S
versus T
A
. PMI has a bias-current compensation circuit that gives improved bias current and bias current over temperature versus standard
JFET input op amps. I
S
and I
OS
are measured at V
CM
= 0.
2
Setting time is defined here for a unity gain inverter connection using 2 kW resistors. It is the time required for the error voltage (the voltage at the inverting input pin
on the amplifier) to settle to within a specified percent of its final value from the time a 10 V step input is applied to the inverter. See setting time test circuit.
3
Sample tested.
Specifications are subject to change without notice.
–2–
REV. A
OP215
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
Parameter
Input Offset Voltage
Average Input Offset
Voltage Drift
Without External Trim
1
With External Trim
Input Offset Current
2
Symbol
V
OS
(at V
S
=
±15
V, 0 C
otherwise noted.)
T
A
70 C for E Grade, –40 C
OP215E
Type
0.4
T
A
+85 C for G Grade, unless
OP215G
Type
Max
3.5
8.0
Conditions
R
S
= 50
W
Min
Max
1.65
Min
Unit
mV
TCV
OS
TCV
OSn
I
OS
R
P
= 100 kW
T
j
= 70∞C
T
A
= 70∞C
Device Operating
T
j
= 70∞C
T
A
= 70∞C
Device Operating
10.2
–10.2
V
CM
=
±
IVR
V
S
=
±
10 V to
±
16 V
V
S
=
±
10 V to
±
15 V
R
L
2 kW
V
O
=
±
10 V
R
L
10 kW
50
±
12
80
3
3
0.06
0.08
±
0.12
±
0.16
14.7
–11.4
98
13
180
±
13
15
0.45
0.80
±
0.70
±
1.40
10.1
–10.1
76
100
6
4
0.08
0.10
±
0.14
±
0.19
14.7
–11.3
94
0.65
1.2
±
0.9
±
1.8
V/∞C
V/∞C
nA
nA
nA
nA
V
V
dB
Input Bias Current
2
I
S
Input Voltage Range
Common-Mode
Rejection Ratio
Power Supply Rejection
Ratio
Large-Signal
Voltage Gain
Output Voltage Swing
IVR
CMRR
PSRR
A
VO
V
O
20
35
±
12
130
±
13
159
V/V
V/mV
V
NOTES
1
Sample tested.
2
Input bias current is specified for two different conditions. The T
j
= 25∞C specification is with the junction at ambient temperature; the Device Operating specification is
with the device operating in a warmed up condition at 25∞C ambient. The warmed up bias-current value is correlated to the junction temperature value via the curves
of I
S
versus T
j
and I
S
versus T
A
. PMI has a bias-current compensation circuit that gives improved bias current and bias current over temperature versus standard
JFET input op amps. I
S
and I
OS
are measured at V
CM
= 0.
Specifications are subject to change without notice.
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